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An accurate automated technique for quasioptics measurement of the microwave diagnostics for fusion plasma
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作者 胡健强 刘阿娣 +8 位作者 周楚 张小辉 王明远 张津 冯喜 李弘 谢锦林 刘万东 俞昌旋 《Plasma Science and Technology》 SCIE EI CAS CSCD 2017年第8期30-36,共7页
A new integrated technique for fast and accurate measurement of the quasi-optics, especially for the microwave/millimeter wave diagnostic systems of fusion plasma, has been developed. Using the LabVIEW-based comprehen... A new integrated technique for fast and accurate measurement of the quasi-optics, especially for the microwave/millimeter wave diagnostic systems of fusion plasma, has been developed. Using the LabVIEW-based comprehensive scanning system, we can realize not only automatic but also fast and accurate measurement, which will help to eliminate the effects of temperature drift and standing wave/multi-reflection. With the Matlab-based asymmetric two-dimensional Gaussian fitting method, all the desired parameters of the microwave beam can be obtained. This technique can be used in the design and testing of microwave diagnostic systems such as reflectometers and the electron cyclotron emission imaging diagnostic systems of the Experimental Advanced Superconducting Tokamak. 展开更多
关键词 diagnostics microwave drift millimeter optics desired eliminate automated fitting asymmetric
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Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC
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作者 Bo Hong Wen-Bin Dou 《Journal of Electronic Science and Technology》 CAS 2011年第1期81-84,共4页
By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit (MMIC) is presented.With careful optimi... By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit (MMIC) is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency (PAE) of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads. 展开更多
关键词 GaAs pHEMT (pseudomorphic high electron mobility transistor) millimeter wave microwave monolithic integrated circuit power adde defficiency power amplifier.
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