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Relationship between enlargement of traumatic intracerebral hematoma and irregular rate of hematoma morphous
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作者 姚瑜 《外科研究与新技术》 2005年第3期187-187,共1页
To study the relationship between incidence and time course of traumatic intracerebral hematoma enlargement and that between hematoma irregular rate (IR) and hematoma enlargement after brain injury.Methods After brain... To study the relationship between incidence and time course of traumatic intracerebral hematoma enlargement and that between hematoma irregular rate (IR) and hematoma enlargement after brain injury.Methods After brain injury,164 cases with traumatic supratentorial intracerebral hematoma were examined by cranial CT scan within 72 hours thereafter reexamined 120 hours there after so as to compare the hematoma volumes (V1 and V2) and analyze the relation between hematoma IR and hematoma enlargement.Results After brain injury,enlargement of hematoma was confirmed in 70 cases (42.7%),in which the cutpoint for hematoma enlargement was determined as V2/V1=1.45 by using receiver operating characteristic curves (ROC).Hematoma IR had positive correlation with hematoma enlargement (r=0.857,P<0.01).Conclusion Since the incidence of traumatic hematoma enlargement is high,we can tell the possibility of hematoma enlargement based on hematoma IR in order to make a timely reexamination of CT scan and apply active treatments.7 refs,1 tab. 展开更多
关键词 Relationship between enlargement of traumatic intracerebral hematoma and irregular rate of hematoma morphous
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Characteristics of bottom gate a-Si TFT array for AM-OLEDs
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作者 张浩 陈龙龙 +4 位作者 石继锋 李春亚 路林 李喜峰 张建华 《Journal of Shanghai University(English Edition)》 CAS 2011年第4期239-241,共3页
The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/(V.s), on/off ratio of 7.5&... The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/(V.s), on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) technology. 展开更多
关键词 morphous silicon (aoSi) TRANSISTOR ARRAY stability
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