Dynamic vortex Mott transition in triangular superconducting arrays

The proximity-coupled superconducting island arrays on a metallic film provide an ideal platform to study the phase transition of vortex states under mutual interactions between the vortex and potential landscape. We have developed a topdown microfabrication process for Nb island arrays on Au film by employing an Al hard mask. A current-induced dynamic vortex Mott transition has been observed under the perpendicular magnetic fields of f magnetic flux quantum per unit cell,which is characterized by a dip-to-peak reversal in differential resistance dV/dI vs. f curve with the increasing current.The dV/dI vs. I characteristics show a scaling behavior near the magnetic fields of f = 1/2 and f = 1, with the critical exponents ε of 0.45 and 0.3, respectively, suggesting different universality classes at these two fields.

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degener- ate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting A. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

Chiral crossover characterized by Mott transition at finite temperature

We discuss the proper definition for the chiral crossover at finite temperature,based on Goldstone's theorem.Different from the commonly used maximum change in chiral condensate,we propose defining the crossover temperature using the Mott transition of pseudo-Goldstone bosons,which,by definition,guarantees Goldstone's theorem.We analytically and numerically demonstrate this property in the frame of a Pauli-Villars regularized NJL model.In an external magnetic field,we find that the Mott transition temperature shows an inverse magnetic catalysis effect.

Non-Achievability of Metal-Insulator Transition in Two-Dimensional Systems

We present a simple demonstration of the nonfeasibility of metal-insulator transition in an exactly two-dimensional （2D） system. The Hartree-Fock potential in the 3D system is suitably modified and presented for the 2D case. The many body effects are included in the screening function, and binding energies of a donor are obtained as a function of impurity concentration so as to find out the possible way leading metal-insulator transition in the 2D system. While solving for the binding energy for a shallow donor in an isolated well of a GaAs/Ga1-x Als As superlattice system within the effective mass approximation, it leads to unphysical results for higher concentrations. It shows that the phase transition, the bound electron entering into the conduction band whereby （H）min=0, is not possible beyond this concentration. The results suggest thai a phase transition is impossible in 213 systems, supporting the scaling theory of localization. The results are compared with the existing data available and discussed in the light of existing literature.

Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel

The strategy of a reliable transition temperature control of vanadium dioxide(VO2)is reported.Rectangular VO2 nanobeams were synthesized by a thermal chemical vapor deposition(TCVD)system.The metal-insulator transition(MIT)temperature increases to above 380K when the TiO2 ratio of the source is 5 at.%,although the Ti source is not physically doped into VO2 nanobeams.The XPS spectra of the V 2p orbital reveal the excessive oxidation of V after the TCVD processes with a higher TiO2 ratio,indicating that the TiO2 precursor is important in the O-doping of the surface V O bonds when forming volatile Ti-O gas species.Thus,TiO2 reactants can be used as a VO2 surface chemical modifier to manipulate the MIT transition temperature and maintain a homogenous VO2 phase,which is useful for a Mott device application with a record on/off switching ratio>104 and Mott transition temperature>380 K.