Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of...Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.展开更多
[Objective] This study aimed to explore the mutagenesis effects of N＋ ion beam implantation on Streptomyces a/bus and obtain high-yield salinomycin- producing mutant strain. [ Method ] Streptomyces a/bus strain S-11-...[Objective] This study aimed to explore the mutagenesis effects of N＋ ion beam implantation on Streptomyces a/bus and obtain high-yield salinomycin- producing mutant strain. [ Method ] Streptomyces a/bus strain S-11-04 was mutated with different doses of N ＋ implantation. The effects of low energy N ＊ implantation on the survival rate, colony morphology and salinomycin-producing ability were investigated. [ Result] The results showed that low energy N ＋ implantation can efficiently improve the positive mutation rate of Streptomyces albus; 13 mutant strains with high yield of salinomycin were isolated; to be specific, mutant strain N3- 6 has relatively good genetic stability with four continuous generations, and the titres of salinomycin were increased by 41% in the shake-flask culture and 20.5% in mass production compared with the control. [ Conclusion ] N ＋ ion beam irradiation is an effective method to obtain high-yield salinomycin-producing Streptomy- ces albus strain.展开更多
基金The project supported by the National Nature Science Foundation of China (No. 19890300)
文摘Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.
文摘[Objective] This study aimed to explore the mutagenesis effects of N＋ ion beam implantation on Streptomyces a/bus and obtain high-yield salinomycin- producing mutant strain. [ Method ] Streptomyces a/bus strain S-11-04 was mutated with different doses of N ＋ implantation. The effects of low energy N ＊ implantation on the survival rate, colony morphology and salinomycin-producing ability were investigated. [ Result] The results showed that low energy N ＋ implantation can efficiently improve the positive mutation rate of Streptomyces albus; 13 mutant strains with high yield of salinomycin were isolated; to be specific, mutant strain N3- 6 has relatively good genetic stability with four continuous generations, and the titres of salinomycin were increased by 41% in the shake-flask culture and 20.5% in mass production compared with the control. [ Conclusion ] N ＋ ion beam irradiation is an effective method to obtain high-yield salinomycin-producing Streptomy- ces albus strain.
