Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen...Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds展开更多
FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin...FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.展开更多
Nitrogen doped fluorinated amorphous carbon thin films(a-C:N:F)were prepared by radio frequency plasma enhanced chemical vapor deposition(rf-PECVD)under different deposited condition usingCH_4,CF_4,and N_2 as source g...Nitrogen doped fluorinated amorphous carbon thin films(a-C:N:F)were prepared by radio frequency plasma enhanced chemical vapor deposition(rf-PECVD)under different deposited condition usingCH_4,CF_4,and N_2 as source gases.The thin films were annealed at different temperature.The influence of doped nitrogen on the chemical structure, tribological and thermal properties of thin films were investigated by Atomic force microscopy(AFM),Fourier transform infrared absorption spectrometry(FTIR),X-ray photoelectron spectrum spectra(XPS),and thermogravimetry(TG).The results indicated that the thin films presence a compact and smooth morphology surface after the nitrogen doped.After incorporation of nitrogen,the H atoms are replaced partially by the N atoms in the thin films.The degree of cross-linking of the carbon network in the thin films is enhanced.The chemical bonds of C=N,C≡N,and C—N_x(x=1,2,3) have formed in the films.The relative content of sp^2 graphite phase increases.The thermal stability temperature of the films deposited at r=0.5(r=N_2/[CF_4+CH_4+N_2])is 420℃.The tribological properties improve greatly,and the friction coefficient of the a-C:N:F thin films ranges approximately from 0.20 to 0.36.展开更多
Copper nitride(Cu3 N) thin films display typical trans-rhenium trioxide structures. They exhibit excellent physical properties, low cost, nontoxicity, and high stability under room temperature. However, they possess...Copper nitride(Cu3 N) thin films display typical trans-rhenium trioxide structures. They exhibit excellent physical properties, low cost, nontoxicity, and high stability under room temperature. However, they possess low-thermal decomposition temperature, and their lattice constant often changes significantly with prepared technologies or techniques, thereby enabling the transformation from insulators to semiconductors and even conductors. Moreover, Cu3 N thin films are becoming the new research hotspot of optical information storage devices, microelectronic semiconductor materials, and new energy materials. In this study, existing major prepared technologies of Cu3 N thin films are summarized. Influences of prepared technologies of Cu3 N thin films on crystal structure of films, as well as influences of prepared conditions and methods(e.g., nitrogen pressure, deposition power, substrate temperature, and element addition) on crystal structure and optical, electrical, and thermal properties of films were analyzed. The relationship between crystal structure and physical properties of Cu3 N thin films was explored. Finally,applications of Cu3 N thin films in photoelectricity, energy sources, nanometer devices, and other fields were discussed.展开更多
文摘Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds
基金the National Natural Science Foundation of China (No. 60571010)the Open Foundation of the Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province in Hubei University
文摘FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.
基金Item Sponsored by National Natural Science Foundation of China[No.11064003]
文摘Nitrogen doped fluorinated amorphous carbon thin films(a-C:N:F)were prepared by radio frequency plasma enhanced chemical vapor deposition(rf-PECVD)under different deposited condition usingCH_4,CF_4,and N_2 as source gases.The thin films were annealed at different temperature.The influence of doped nitrogen on the chemical structure, tribological and thermal properties of thin films were investigated by Atomic force microscopy(AFM),Fourier transform infrared absorption spectrometry(FTIR),X-ray photoelectron spectrum spectra(XPS),and thermogravimetry(TG).The results indicated that the thin films presence a compact and smooth morphology surface after the nitrogen doped.After incorporation of nitrogen,the H atoms are replaced partially by the N atoms in the thin films.The degree of cross-linking of the carbon network in the thin films is enhanced.The chemical bonds of C=N,C≡N,and C—N_x(x=1,2,3) have formed in the films.The relative content of sp^2 graphite phase increases.The thermal stability temperature of the films deposited at r=0.5(r=N_2/[CF_4+CH_4+N_2])is 420℃.The tribological properties improve greatly,and the friction coefficient of the a-C:N:F thin films ranges approximately from 0.20 to 0.36.
基金the National Natural Science Foundation of China (No. 11364011)Guangxi Natural Science Foundation (Nos. 2015GXNSFAA139004, and 2017GXNSFAA198121)
文摘Copper nitride(Cu3 N) thin films display typical trans-rhenium trioxide structures. They exhibit excellent physical properties, low cost, nontoxicity, and high stability under room temperature. However, they possess low-thermal decomposition temperature, and their lattice constant often changes significantly with prepared technologies or techniques, thereby enabling the transformation from insulators to semiconductors and even conductors. Moreover, Cu3 N thin films are becoming the new research hotspot of optical information storage devices, microelectronic semiconductor materials, and new energy materials. In this study, existing major prepared technologies of Cu3 N thin films are summarized. Influences of prepared technologies of Cu3 N thin films on crystal structure of films, as well as influences of prepared conditions and methods(e.g., nitrogen pressure, deposition power, substrate temperature, and element addition) on crystal structure and optical, electrical, and thermal properties of films were analyzed. The relationship between crystal structure and physical properties of Cu3 N thin films was explored. Finally,applications of Cu3 N thin films in photoelectricity, energy sources, nanometer devices, and other fields were discussed.