The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of ...The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.展开更多
Based on the statistical model and taking into account the Q-value dependence and odd-even effects, we proposed a new empirical formula to reproduce the cross sections of the (n, p) reactions at 14.7 MeV neutron energ...Based on the statistical model and taking into account the Q-value dependence and odd-even effects, we proposed a new empirical formula to reproduce the cross sections of the (n, p) reactions at 14.7 MeV neutron energy and at the target mass number 14 ≤ A ≤ 198 for even A and 29 ≤ A ≤ 205 for odd A. All calculated results from the proposed empirical formula were compared to the experimental data as well as the available semi-empirical formula obtained by other authors. A high level of agreement has been found between the collected experimental data and the most of semiempirical formulae obtained by others.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
Using a previous model, which was developed to describe the light-induced creation ofthe defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior...Using a previous model, which was developed to describe the light-induced creation ofthe defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.展开更多
Van der Waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the ...Van der Waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the band offset of type-Ⅱband alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer,instead of an external electric field.On the basis of symmetry analysis,the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined,and a four-level k·p model was developed to obtain the interlayer hopping.Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets.Moreover,the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.展开更多
基金supported by the National Key Technologies R&D Program in 10th Five-year Plan of China(2001BA507A)the National Natural Sicence Foundation of China(39760040).
文摘The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.
文摘Based on the statistical model and taking into account the Q-value dependence and odd-even effects, we proposed a new empirical formula to reproduce the cross sections of the (n, p) reactions at 14.7 MeV neutron energy and at the target mass number 14 ≤ A ≤ 198 for even A and 29 ≤ A ≤ 205 for odd A. All calculated results from the proposed empirical formula were compared to the experimental data as well as the available semi-empirical formula obtained by other authors. A high level of agreement has been found between the collected experimental data and the most of semiempirical formulae obtained by others.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
文摘Using a previous model, which was developed to describe the light-induced creation ofthe defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.
基金supported by the National Natural Science Foundation of China(No.51872170)Young Scholars Program of Shandong University(YSPSDU)+2 种基金Shandong Provincial Key Research and Development Program(Major Scientific and Technological Innovation Project)(No.2019JZZY010302)the Natural Science Foundation of Shandong Province(No.ZR2019MEM013)Taishan Scholar Program of Shandong Province.
文摘Van der Waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the band offset of type-Ⅱband alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer,instead of an external electric field.On the basis of symmetry analysis,the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined,and a four-level k·p model was developed to obtain the interlayer hopping.Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets.Moreover,the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.