Seven-day-old maize (Zea mays) plants were grown hydroponically for ten days in deprived nutrient solutions against the corresponding control grown under full nutrition;the effects of S-, N- or P-deprivation on lamina...Seven-day-old maize (Zea mays) plants were grown hydroponically for ten days in deprived nutrient solutions against the corresponding control grown under full nutrition;the effects of S-, N- or P-deprivation on laminas’ mean stomatal conductance (gs), transpiration rate (E) and photosynthetic rate (A) were monitored, along with the impact on the laminas’ total dry mass (DM), water amount (W), length and surface area (Sa). Furthermore, a time series analysis of each parameter’s response ratios (Rr), i.e. the treatment’s value divided by the corresponding control’s one, was performed. Under S-deprivation, the Rr of laminas’ mean gs, E, and A presented oscillations within a ±15% fluctuation zone, notably the “control” zone, whilst those of laminas’ total DM, water amount, surface area, and length included oscillation during the first days and deviation later on, presenting deviation during d10. Under the N-deprivation conditions all Rr time courses except the A one, included early deviations from the control zone without recovering. The deviation from the control zone appeared at d4. Under P-deprivation, all Rr time courses represented oscillations within the control zone. P-deprivation’s patterns resembled those of S-deprivation. Compared to the one of the S-deprivation, the P-one’s oscillations took place within a broader zone. Linear relationships among the various Rr patterns were found between gs-E, gs-A, E-A, DM-W and DM-Sa. In conclusion, the impact of P-deprivation appeared in an early stage and included an alleviation action, the one of N-deprivation appeared early with no alleviation action, whilst that of S-deprivation appeared later, being rather weaker when compared to the impact of the P-deprivation’s impact.展开更多
To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,lig...To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,light and moderate and severe drought treatments[(80±5),(65±5),(50±5),and(35±5)%of field water-holding capacity].Non-structural carbohydrates,carbon(C),nitrogen(N),and phosphorus(P)concentrations were measured in each plant component.The results show that:(1)With increasing drought,non-structural carbohydrates gradually increased in leaves,stems,and coarse roots,while gradually decreased in fine roots;(2)C concentrations of all were relatively stable under different stress levels.Phosphorous utilization of each component increased under light and moderate drought conditions,while N and P utilization efficiency of each plant component decreased under severe drought.Growth was mainly restricted by N,first decreasing and then increasing with increased drought;(3)There was a correlation between the levels of non-structural carbohydrates and C,N,and P in each component.Changes in N concentration affected the interconversion between soluble sugar and starch,which play a regulatory role in the fluctuation of the concentration of non-structural carbohydrates;and,(4)Plasticity analysis showed that P.yunnanensis seedlings responded to drought mainly by altering starch concentration,the ratio of soluble sugar to starch in leaves and stems,and further by alter-ing N and P utilization efficiencies.Overall,these results suggest that the physiological activities of all organs of P.yunnanensis seedlings are restricted under drought and that trade-offs exist between different physiological indicators and organs.Our findings are helpful in understanding non-structural carbohydrate and nutrient adaptation mechanisms under drought in P.yunnanensis seedlings.展开更多
The mixed forests of the upper Rio Negro at the northern of the Amazon basin grow in oxisol soils that are extremely infertile. These areas exhibit deficiencies in several macro-nutrients, and may also be characterize...The mixed forests of the upper Rio Negro at the northern of the Amazon basin grow in oxisol soils that are extremely infertile. These areas exhibit deficiencies in several macro-nutrients, and may also be characterized by the shortage or toxic excess of some micronutrients. The overall goal of this research is to collect more comprehensive information regarding the micronutrient composition of the upper Rio Negro forests as well as discern the relationship between leaf micro- and macro-nutrients that may contribute to the homeostasis and balance of the ionome. Firstly, the nutrient composition within the oxisol soil and leaf tissues of two top canopy tree species from the mixed forests was determined. We then analyzed the relationship between leaf micronutrient composition with N and P levels of the two species and that of species inhabiting the Amazon caatinga. Extractable soil Zn, B, Mn and Cu were very low in the mixed forest. In contrast, Fe and Al levels were potentially toxic. The analysis of leaf N/P ratios revealed for the first time the co-limitation of N and P in the mixed forest. This contrasts with species from the adjacent Amazon caatinga toposequence that are characterized by strong N limitation. All micronutrients within leaves of species inhabiting the mixed forest were also found to have low concentrations. Moreover, Fe and Al were detected at concentrations well below those reported for accumulator species. This suggested that leaf ion homeostasis was maintained under potentially toxic soil Fe and Al conditions. Leaf micronutrient (Fe, Zn and B) contents mirrored that of leaf N and P contents, and comparable Fe/N, Fe/P, Zn/N, Zn/P, B/N as well as B/P ratios were found across species and forest types. Therefore, forest species exhibited the capability to maintain leaf nutrient balances under soil conditions with deficient or toxic levels of micronutrients.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
Plant biomass, primary production and mineral cycling in the beech forest (Fagus sylvatica L.), Hestehave in Jutland, Denmark were studied over a 50-year period. The role of the forest as a carbon sink was also assess...Plant biomass, primary production and mineral cycling in the beech forest (Fagus sylvatica L.), Hestehave in Jutland, Denmark were studied over a 50-year period. The role of the forest as a carbon sink was also assessed. Aboveground tree biomass was 226 t·ha-1 in 1970 and after a 50-year 539 t·ha-1 in 2014, an unexpected increase with 313 t·ha-1. Annual production at those two points in time was 13.4 and 20.5 t·ha-1, respectively. It was apparent that the tree biomass was still acting as a sink for carbon, which was the dominant element in the aboveground parts. The concentration of other elements (N > K > Mg > P > S > Na > Mn > Zn > Fe > Cu) ranged from 495 to 0.4 kg·ha-1. Annual litterfall restored 3.2 t·ha-1 to the soil as organic matter or 1.6 t·ha-1 as carbon. Over the year 53% of the litterfall was decomposed. A pH decrease of 0.95 units in the soil was observed between 1968 and 1993. This was attributed to fallout from a neighbouring thermal heating station affecting sulfur deposition and increasing soil acidification. After 1993, when filters were fitted in the heating station, the pH decrease in the soil was smaller, only 0.09 pH-units up to 2011. The increased tree growth is an additional, likely explanation for the observed soil acidification. Deposition of the growth-limiting element nitrogen increased during later years and is now, most likely around 20 kg·ha-1 per annum, which may partly contribute to the increased production.展开更多
Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are...Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.展开更多
In order to examine the causes of degradation of Pinus sylvestris var. mongolica plantations on sandy land, the foliar concentrations of N, P, K and C were analyzed and compared between the field grown P. sylvestris v...In order to examine the causes of degradation of Pinus sylvestris var. mongolica plantations on sandy land, the foliar concentrations of N, P, K and C were analyzed and compared between the field grown P. sylvestris var. mongolica trees from two provenances （natural forests and plantations）. The results indicated that natural tree needles had lower N, P and C concentrations, and higher K concentrations than those of plantation tree needles. For plantation tree needles, ratios of N： P, P. K and N： K increased with tree age before 45 years old; but they were not clear for the natural tree needles. Compared with the conclusions reported on Pinus spp., we found that the foliar N and P concentrations were in the optimal range for both natural and plantation tree needles. This result suggested that N or P might not be the absolute limit factors in plant nutrient for P sylvestris var. mongolica on sandy land. However, foliar K concentrations in both natural and plantation tree needles were much lower than those reported on Pinus spp. （〉4.80 g kg-1）.The N： P ratio of natural needles was in the adequate ranges, but N： P ratio of plantation needles was out of the adequate ranges. These results indicated that there was a better balanced nutrition status in the natural forest than in the plantations. If only considering the foliar nutrient concentrations of P sylvestris var. mongolica from different provenances, it might be concluded that the degradation phenomenon of P. sylvestris var. mongolica plantations was not induced by nutrition deficiency of absolute nutrients of N and P, but might be induced by other mineral nutrients or by the effectiveness of N and P nutrients. The unbalanced nutrition status and relatively quick decomposition of needles in the plantations might also contribute to the degradation.展开更多
This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze ...This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.展开更多
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
文摘Seven-day-old maize (Zea mays) plants were grown hydroponically for ten days in deprived nutrient solutions against the corresponding control grown under full nutrition;the effects of S-, N- or P-deprivation on laminas’ mean stomatal conductance (gs), transpiration rate (E) and photosynthetic rate (A) were monitored, along with the impact on the laminas’ total dry mass (DM), water amount (W), length and surface area (Sa). Furthermore, a time series analysis of each parameter’s response ratios (Rr), i.e. the treatment’s value divided by the corresponding control’s one, was performed. Under S-deprivation, the Rr of laminas’ mean gs, E, and A presented oscillations within a ±15% fluctuation zone, notably the “control” zone, whilst those of laminas’ total DM, water amount, surface area, and length included oscillation during the first days and deviation later on, presenting deviation during d10. Under the N-deprivation conditions all Rr time courses except the A one, included early deviations from the control zone without recovering. The deviation from the control zone appeared at d4. Under P-deprivation, all Rr time courses represented oscillations within the control zone. P-deprivation’s patterns resembled those of S-deprivation. Compared to the one of the S-deprivation, the P-one’s oscillations took place within a broader zone. Linear relationships among the various Rr patterns were found between gs-E, gs-A, E-A, DM-W and DM-Sa. In conclusion, the impact of P-deprivation appeared in an early stage and included an alleviation action, the one of N-deprivation appeared early with no alleviation action, whilst that of S-deprivation appeared later, being rather weaker when compared to the impact of the P-deprivation’s impact.
基金This study was supported by the National Natural Science Foundation of China(31960306).
文摘To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,light and moderate and severe drought treatments[(80±5),(65±5),(50±5),and(35±5)%of field water-holding capacity].Non-structural carbohydrates,carbon(C),nitrogen(N),and phosphorus(P)concentrations were measured in each plant component.The results show that:(1)With increasing drought,non-structural carbohydrates gradually increased in leaves,stems,and coarse roots,while gradually decreased in fine roots;(2)C concentrations of all were relatively stable under different stress levels.Phosphorous utilization of each component increased under light and moderate drought conditions,while N and P utilization efficiency of each plant component decreased under severe drought.Growth was mainly restricted by N,first decreasing and then increasing with increased drought;(3)There was a correlation between the levels of non-structural carbohydrates and C,N,and P in each component.Changes in N concentration affected the interconversion between soluble sugar and starch,which play a regulatory role in the fluctuation of the concentration of non-structural carbohydrates;and,(4)Plasticity analysis showed that P.yunnanensis seedlings responded to drought mainly by altering starch concentration,the ratio of soluble sugar to starch in leaves and stems,and further by alter-ing N and P utilization efficiencies.Overall,these results suggest that the physiological activities of all organs of P.yunnanensis seedlings are restricted under drought and that trade-offs exist between different physiological indicators and organs.Our findings are helpful in understanding non-structural carbohydrate and nutrient adaptation mechanisms under drought in P.yunnanensis seedlings.
文摘The mixed forests of the upper Rio Negro at the northern of the Amazon basin grow in oxisol soils that are extremely infertile. These areas exhibit deficiencies in several macro-nutrients, and may also be characterized by the shortage or toxic excess of some micronutrients. The overall goal of this research is to collect more comprehensive information regarding the micronutrient composition of the upper Rio Negro forests as well as discern the relationship between leaf micro- and macro-nutrients that may contribute to the homeostasis and balance of the ionome. Firstly, the nutrient composition within the oxisol soil and leaf tissues of two top canopy tree species from the mixed forests was determined. We then analyzed the relationship between leaf micronutrient composition with N and P levels of the two species and that of species inhabiting the Amazon caatinga. Extractable soil Zn, B, Mn and Cu were very low in the mixed forest. In contrast, Fe and Al levels were potentially toxic. The analysis of leaf N/P ratios revealed for the first time the co-limitation of N and P in the mixed forest. This contrasts with species from the adjacent Amazon caatinga toposequence that are characterized by strong N limitation. All micronutrients within leaves of species inhabiting the mixed forest were also found to have low concentrations. Moreover, Fe and Al were detected at concentrations well below those reported for accumulator species. This suggested that leaf ion homeostasis was maintained under potentially toxic soil Fe and Al conditions. Leaf micronutrient (Fe, Zn and B) contents mirrored that of leaf N and P contents, and comparable Fe/N, Fe/P, Zn/N, Zn/P, B/N as well as B/P ratios were found across species and forest types. Therefore, forest species exhibited the capability to maintain leaf nutrient balances under soil conditions with deficient or toxic levels of micronutrients.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
文摘Plant biomass, primary production and mineral cycling in the beech forest (Fagus sylvatica L.), Hestehave in Jutland, Denmark were studied over a 50-year period. The role of the forest as a carbon sink was also assessed. Aboveground tree biomass was 226 t·ha-1 in 1970 and after a 50-year 539 t·ha-1 in 2014, an unexpected increase with 313 t·ha-1. Annual production at those two points in time was 13.4 and 20.5 t·ha-1, respectively. It was apparent that the tree biomass was still acting as a sink for carbon, which was the dominant element in the aboveground parts. The concentration of other elements (N > K > Mg > P > S > Na > Mn > Zn > Fe > Cu) ranged from 495 to 0.4 kg·ha-1. Annual litterfall restored 3.2 t·ha-1 to the soil as organic matter or 1.6 t·ha-1 as carbon. Over the year 53% of the litterfall was decomposed. A pH decrease of 0.95 units in the soil was observed between 1968 and 1993. This was attributed to fallout from a neighbouring thermal heating station affecting sulfur deposition and increasing soil acidification. After 1993, when filters were fitted in the heating station, the pH decrease in the soil was smaller, only 0.09 pH-units up to 2011. The increased tree growth is an additional, likely explanation for the observed soil acidification. Deposition of the growth-limiting element nitrogen increased during later years and is now, most likely around 20 kg·ha-1 per annum, which may partly contribute to the increased production.
文摘Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.
基金The research was supported by Innovation Research Project of Chinese Academy of Sciences (KZCX3-SW-418), and the 100 Young Researcher Project of Chinese Academy of Sciences.
文摘In order to examine the causes of degradation of Pinus sylvestris var. mongolica plantations on sandy land, the foliar concentrations of N, P, K and C were analyzed and compared between the field grown P. sylvestris var. mongolica trees from two provenances （natural forests and plantations）. The results indicated that natural tree needles had lower N, P and C concentrations, and higher K concentrations than those of plantation tree needles. For plantation tree needles, ratios of N： P, P. K and N： K increased with tree age before 45 years old; but they were not clear for the natural tree needles. Compared with the conclusions reported on Pinus spp., we found that the foliar N and P concentrations were in the optimal range for both natural and plantation tree needles. This result suggested that N or P might not be the absolute limit factors in plant nutrient for P sylvestris var. mongolica on sandy land. However, foliar K concentrations in both natural and plantation tree needles were much lower than those reported on Pinus spp. （〉4.80 g kg-1）.The N： P ratio of natural needles was in the adequate ranges, but N： P ratio of plantation needles was out of the adequate ranges. These results indicated that there was a better balanced nutrition status in the natural forest than in the plantations. If only considering the foliar nutrient concentrations of P sylvestris var. mongolica from different provenances, it might be concluded that the degradation phenomenon of P. sylvestris var. mongolica plantations was not induced by nutrition deficiency of absolute nutrients of N and P, but might be induced by other mineral nutrients or by the effectiveness of N and P nutrients. The unbalanced nutrition status and relatively quick decomposition of needles in the plantations might also contribute to the degradation.
文摘This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
