A novel halogen-free phosphorus–nitrogen–silicon flame retardant monomer with reactive siloxy groups,N-(diphenylphosphino)-1,1-diphenyl-N-(3-(triethoxysilyl)propyl) phosphinamine(DPTA) has been synthesized and was a...A novel halogen-free phosphorus–nitrogen–silicon flame retardant monomer with reactive siloxy groups,N-(diphenylphosphino)-1,1-diphenyl-N-(3-(triethoxysilyl)propyl) phosphinamine(DPTA) has been synthesized and was applied to the fire-resistant finishing of cotton fabrics. The molecular structure of DPTA has been well characterized by elemental analysis, FTIR,1H NMR, and ^(31)P NMR spectroscopies. The chemically-grafted cotton fabrics, which were treated with 25 wt% DPTA, were obtained and confirmed by attenuated total reflectance Fourier infrared spectroscopy(ATR-FTIR). The flame retardancy and thermal property of the treated samples were investigated by limited oxygen index(LOI), vertical flammability test(VFT), thermogravimetric analysis(TGA) and microscale combustion calorimeter(MCC). It is noted that in vertical flammability test, the treated samples extinguished immediately upon removing the ignition source, whereas the untreated one was completely burned out. Furthermore, TGA and MCC tests revealed that the treated samples produced a high char formation and a low heated release during combustion. The surface morphology of the untreated and treated samples and the char residues after LOI tests were observed by scanning electron microscopy(SEM). Therefore, all the results showed that the treated cotton fabrics with 25 wt% DPTA apparently improved the fireresistant and thermal performances.展开更多
Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen.Since the pioneering discovery by Honda and...Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen.Since the pioneering discovery by Honda and Fujishima,considerable efforts have been made in this research area.Among various materials developed,Ga(X)N/Si(X=In,Ge,Mg,etc.)nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by sunlight.This paper introduces the characteristics,properties,and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture,primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen fuel.In addition,it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water splitting.Moreover,it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
基金Supported by the National Natural Science Foundation of China(21301160)
文摘A novel halogen-free phosphorus–nitrogen–silicon flame retardant monomer with reactive siloxy groups,N-(diphenylphosphino)-1,1-diphenyl-N-(3-(triethoxysilyl)propyl) phosphinamine(DPTA) has been synthesized and was applied to the fire-resistant finishing of cotton fabrics. The molecular structure of DPTA has been well characterized by elemental analysis, FTIR,1H NMR, and ^(31)P NMR spectroscopies. The chemically-grafted cotton fabrics, which were treated with 25 wt% DPTA, were obtained and confirmed by attenuated total reflectance Fourier infrared spectroscopy(ATR-FTIR). The flame retardancy and thermal property of the treated samples were investigated by limited oxygen index(LOI), vertical flammability test(VFT), thermogravimetric analysis(TGA) and microscale combustion calorimeter(MCC). It is noted that in vertical flammability test, the treated samples extinguished immediately upon removing the ignition source, whereas the untreated one was completely burned out. Furthermore, TGA and MCC tests revealed that the treated samples produced a high char formation and a low heated release during combustion. The surface morphology of the untreated and treated samples and the char residues after LOI tests were observed by scanning electron microscopy(SEM). Therefore, all the results showed that the treated cotton fabrics with 25 wt% DPTA apparently improved the fireresistant and thermal performances.
基金supported by the National Natural Science Foundation of China(Grant No.22109095)the Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University(21TQ1400211)+1 种基金the Oceanic Interdisciplinary Program of Shanghai Jiao Tong University(SL2022MS007)the Natural Science and Engineering Research Council of Canada(NSERC)Discovery Grant Program.
文摘Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen.Since the pioneering discovery by Honda and Fujishima,considerable efforts have been made in this research area.Among various materials developed,Ga(X)N/Si(X=In,Ge,Mg,etc.)nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by sunlight.This paper introduces the characteristics,properties,and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture,primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen fuel.In addition,it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water splitting.Moreover,it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
