Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Uniformity Control of Scanned Beam in 300 MeV Proton and Heavy Ion Accelerator Complex at SESRI

In recent years,heavy ion accelerator technology has been rapidly developing worldwide and widely applied in the fields of space radiation simulation and particle therapy.Usually,a very high uniformity in the irradiation area is required for the extracted ion beams,which is crucial because it directly affects the experimental precision and therapeutic effect.Specifically,ultra-large-area and high-uniformity scanning are crucial requirements for spacecraft radiation effects assessment and serve as core specification for beamline terminal design.In the 300 MeV proton and heavy ion accelerator complex at the Space Environment Simulation and Research Infrastructure(SESRI),proton and heavy ion beams will be accelerated and ultimately delivered to three irradiation terminals.In order to achieve the required large irradiation area of 320 mm×320 mm,horizontal and vertical scanning magnets are used in the extraction beam line.However,considering the various requirements for beam species and energies,the tracking accuracy of power supplies(PSs),the eddy current effect of scanning magnets,and the fluctuation of ion bunch structure will reduce the irradiation uniformity.To mitigate these effects,a beam uniformity optimization method based on the measured beam distribution was proposed and applied in the accelerator complex at SESRI.In the experiment,the uniformity is successfully optimized from 75%to over 90%after five iterations of adjustment to the PS waveforms.In this paper,the method and experimental results were introduced.

Half-integer Shapiro steps in MgB_(2) focused He ion beam Josephson junctions

Half-integer microwave induced steps(Shapiro steps)have been observed in many different Josephson junction systems,which have attracted a lot of attention because they signify the deviation of current phase relation(CPR)and uncover many unconventional physical properties.In this article,we first report the discovery of half-integer Shapiro steps in MgB_(2)focused He ion beam(He-FIB)Josephson junctions.The half-integer steps'dependence on microwave frequency,temperature,microwave power,and magnetic field is also analyzed.We find that the existence of half-integer steps can be controlled by the magnetic field periodically,which is similar to that of high temperature superconductor(HTS)grain boundary junctions,and the similarity of the microstructures between gain boundary junctions and He-FIB junctions is discussed.As a consequence,we mainly attribute the physical origin of half-integer steps in MgB_(2)He-FIB junctions to the model that a He-FIB junction is analogous to a parallel junctions'array.Our results show that He-FIB technology is a promising platform for researching CPR in junctions made of different superconductors.

Influence of extraction voltage on electron and ion behavior characteristics

The characteristics of the extracted ion current have a significant impact on the design and testing of ion source performance.In this paper,a 2D in space and 3D in velocity space particle in cell(2D3V PIC)method is utilized to simulate plasma motion and ion extraction characteristics under various initial plasma velocity distributions and extraction voltages in a Cartesian coordinate system.The plasma density is of the order of 10^(15)m^(-3)-10^(16)m^(-3)and the extraction voltage is of the order of 100 V-1000 V.The study investigates the impact of various extraction voltages on the velocity and density distributions of electrons and positive ions,and analyzes the influence of different initial plasma velocity distributions on the extraction current.The simulation results reveal that the main reason for the variation of extraction current is the spacecharge force formed by the relative aggregation of positive and negative net charges.This lays the foundation for a deeper understanding of extraction beam characteristics.

Experimental results of a magnetic field modification to the radio frequency driver of a negative ion source

A magnetic field produced by a current flowing through the plasma grid(PG) is one of the solutions to reduce the collisional loss of negative ions in a negative ion source, which reduces the electron temperature in front of the PG. However, the magnetic field diffused into the driver has some influence on the plasma outflowing. In order to investigate the effect of changing this magnetic field on the outflowing of plasma from the driver, a circular ring(absorber) of high permeability iron has been introduced at the driver exit, which can reduce the magnetic field around it and improve plasma outflowing. With the application of the absorber, the electron density is increased by about 35%, and the extraction current measured from the extraction grid is increased from 1.02 A to 1.29 A. The results of the extraction experiment with cesium injection show that both the extraction grid(EG) current and H-current are increased when the absorber is introduced.

Impact of T_(i)/T_(e )ratio on ion transport based on EAST H-mode plasmas

At the EAST tokamak, the ion temperature(T_(i)) is observed to be clamped around 1.25 keV in electron cyclotron resonance(ECR)-heated plasmas, even at core electron temperatures up to 10 keV(depending on the ECR heating power and the plasma density). This clamping results from the lack of direct ion heating and high levels of turbulence-driven transport. Turbulent transport analysis shows that trapped electron mode and electron temperature gradient-driven modes are the most unstable modes in the core of ECR-heated H-mode plasmas. Nevertheless, recently it was found that the T_(i)/T_(e)ratio can increase further with the fraction of the neutral beam injection(NBI) power, which leads to a higher core ion temperature(Ti0). In NBI heating-dominant H-mode plasmas, the ion temperature gradient-driven modes become the most unstable modes.Furthermore, a strong and broad internal transport barrier(ITB) can form at the plasma core in high-power NBI-heated H-mode plasmas when the T_(i)/T_(e)ratio approaches ~1, which results in steep core Teand Tiprofiles, as well as a peaked neprofile. Power balance analysis shows a weaker Teprofile stiffness after the formation of ITBs in the core plasma region, where Ticlamping is broken,and the core Tican increase further above 2 keV, which is 80% higher than the value of Ticlamping in ECR-heated plasmas. This finding proposes a possible solution to the problem of Ticlamping on EAST and demonstrates an advanced operational regime with the formation of a strong and broad ITB for future fusion plasmas dominated by electron heating.

In situ luminescence measurements of GaN/Al_(2)O_(3) film under different energy proton irradiations

Ion beam-induced luminescence(IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al_(2)O_(3) at varying ion energies,which allowed for the measurement of defects at different depths within the material.The energies of H^(+)were set to 500 keV,640 keV and 2 MeV,the Bragg peaks of which correspond to the GaN film,GaN/Al_(2)O_(3) heterojunction and Al_(2)O_(3) substrate,respectively.A photoluminescence measurement at 250 K was also performed for comparison,during which only near band edge(NBE) and yellow band luminescence in the GaN film were observed.The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed,and both exhibited a decrease with the fluence of H^(+).Additionally,the luminescence of F centers,induced by oxygen vacancies,and Cr^(3+),resulting from the ^(2)E →^(4)A_(2) radiative transition in Al_(2)O_(3),were measured using 2 MeV H^(+).The luminescence intensity of F centers increases gradually with the fluence of H^(+).The luminescence evolution of Cr^(3+)is consistent with a yellow band center,attributed to its weak intensity,and it is situated within the emission band of the yellow band in the GaN film.Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy.Luminescence measurement can be excited by various techniques,but IBIL can satisfy in situ luminescence measurement,and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions.The evolution of defects at different layers with ion fluence can be obtained.

Lifetime measurement of the 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)at an electron beam ion trap

An experimental measurement of the lifetime of 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)is reported in this work.The Mo^(15+)ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.65 T.The decay photons emitted from 3d^(9) ^(2)D_(3/2) level are subsequently recorded via a cooled photomultiplier tube.Through meticulous scrutiny of potential systematic uncertainties affecting the measurement outcomes,we have determined the lifetime of Mo^(15+)3d^(9)2D_(3/2)metastable level to be 2.83(22)ms.The experimental result provides a clear distinguishment from existing calculations based on various theoretical approaches.

Fuel compression in the magnetized cylindrical implosion driven by a gold tube heated by heavy ion beams

A magnetized cylindrical target composed of a gold tube filled with deuterium-tritium fuel plasma at low density is studied numerically in the present paper.A shock wave is produced when a heavy ion beam heats the gold along the direction of the magnetic field.The density peak of the shock wave increases with the increase in time and it propagates in the-r direction in the cylindrical tube.It seems that this wave is the supermagnetosonic wave.It is found that the Mach number M is between 6.96 and 19.19.The density peak of the shock wave increases as the intensity of the heavy ion beam increases.Furthermore,the density peak of the shock wave increases as the external magnetic field increases.

Screening of Biocontrol Strain Bacillus subtilis by N^+ Ion Beam Implantation

[Objective] This study was to investigate the effect of N＋ ion beam implantation on the survival rate and mutation rate of biocontrol strain Bacillus subtilis. [Method] The factors influencing B. subtilis ion beam implantation, including culture time, dilution concentration, solvent, drying time of mycoderm were optimized. B. subtilis cells were implanted by using ion beam at dose of 2.0×10^14～4.0×10^14 ions/cm2 and the energy of 30 kev. Then the methods of culturing colonies confronting each other on plate and Oxford cup diffusion were used to screening strains. [Result] The optimal parameters were found as follows： culture in liquid for 20-24 h, dilution with sterile water to 106 cells/ml and drying time of 60 min for sample preparation; the optimal N＋ ion beam implantation dose of 2.0×10^14～4.0×10^14 ions/cm2 at the energy of 30 kev, the survival rate of 8.43%-26.71% and the mutation rate of 3.50%-5.43%. [Conclusion] This study provided reference for ion beam implantation mutation of B. subtilis.

Preliminary Study on the Low Energy Ion Beam Mediated Parameters with Fractional Factorial Design Method

[Objective] The aim was to explore the biological effect of low energy ion beam mediated parameters with fractional factorial design method. [Method] The twin-embryos seed of autotetraploid rice DER10-04-01 was taken as the receptor material,and the Elymus dahuricus Turcz. was used as materials to provide DNA to carry out the ion beam mediated experiment. And the fractional factorial design method was used to study the parameters of low enery N＋ ion beam mediated foreign genes into rice. [Result] The implantation energy,dose,DNA concentrations and immersion time of DNA showed significant biological effects on the normal growth and development of DER10-04-01,in which the biological effects of implantation dose and DNA concentrations were relatively obvious. [Conclusion] The implantation energy,dose,DNA concentrations and immersion time of DNA were major factors showing important effects on the experimental result in ion beam mediated foreign genetic materials.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

Gene Chip Analysis for Rice MicroRNA Response to Low Energy N^+ Beam Radiation

[Objective] The aim of this study was to explore the expression differences of miRNA response to low energy N＋ beam radiation in rice.[Method]Three groups of ion beam irradiation rice seeds and untreated rice seeds were selected respectively,and then the total RNA of seedlings after 96 h of germination was extracted at 30 ℃.Agilent gene chip was used to screen the differentially expressed genes of two groups of rice seedlings.The chip contained 510 miRNA probes;and about two times of expression differences between two samples were considered as the threshold range.[Result]14 miRNA molecules showed significant expression differences between the irradiated group and the control group,and all of them were decreased.[Conclusion]The miRNAs showed expression differences between irradiated group and the control group,which might regulate the expression of certain genes to respond to ion irradiation,thus producing physiological,biochemical and phenotypic differences.

Effects of Heavy-ion Beams Irradiation on Survival Rate and Antioxidant Enzymes of Sweet Sorghum Seedlings

[Objective] This study aimed to investigate the effects of heavy-ion beams irradiation on the seed germination potential, survival rate, antioxidant enzyme activi- ties and lipid peroxidation of sweet sorghum. [Method] The dry seeds were irradiated by ＇2（36. heavy ion beams with absorbed doses： 0, 40, 80, 120, 160 and 200 Gy, respectively. Then, the seed germination potential, survival rate, antioxidant enzyme activities and lipid peroxidation of sweet sorghum were measured. [Result] Heavy-ion beams irradiation exhibited different influence on germination potential and survival rates. Germination rate showed a downward trend, but the corresponding survival curve of seedlings was saddle-shaped. The activities of SOD, POD, CAT and ASA- POD changed in different trends as well. The MDA content rose toward increasing irradiation dose, suggesting that high dose of heavy-ion beams irradiation enhanced the damage to membrane of sweet sorghum seedlings. [Conclusion] After being irra- diated, germination potential and survival rates of sweet sorghum were decreased, and antioxidant enzymes activity changed greatly. This study laid the basis for fur- ther work on breeding and improvement of sweet sorghum irradiated by ,^（12）C^（6＋） heavy ion beams.

Effects of operating conditions on the performance degradation and anode microstructure evolution of anode-supported solid oxide fuel cells

Performance degradation shortens the life of solid oxide fuel cells in practical applications.Revealing the degradation mechanism is crucial for the continuous improvement of cell durability.In this work,the effects of cell operating conditions on the terminal voltage and anode microstructure of a Ni-yttria-stabilized zirconia anode-supported single cell were investigated.The microstructure of the anode active area near the electrolyte was characterized by laser optical microscopy and focused ion beam-scanning electron microscopy.Ni depletion at the anode/electrolyte interface region was observed after 100 h discharge tests.In addition,the long-term stability of the single cell was evaluated at 700℃for 3000 h.After an initial decline,the anode-supported single cell exhibits good durability with a voltage decay rate of 0.72%/kh and an electrode polarization resistance decay rate of 0.17%/kh.The main performance loss of the cell originates from the initial degradation.

Sulfur/nitrogen/oxygen tri-doped carbon nanospheres as an anode for potassium ion storage

Carbonaceous materials are considered as ideal anode for potassium ion batteries(PIBs)due to their abundant resources and stable physical and chemical properties.However,improvements of reversible capacity and cycle performance are still needed,aiming to the practical application.Herein,S/N/O tridoped carbon(SNOC)nanospheres are prepared by in-situ vulcanized polybenzoxazine.The S/N/O tridoped carbon matrix provides abundant active sites for potassium ion adsorption and effectively improves potassium storage capacity.Moreover,the SNOC nanospheres possess large carbon interlayer spacing and high specific surface area,which broaden the diffusion pathway of potassium ions and accelerate the electron transfer speed,resulting in excellent rate performance.As an anode for PIBs,SNOC shows attractive rate performance(438.5 mA h g^(-1) at 50 mA g^(-1) and 174.5 mA h g^(-1) at2000 mA g^(-1)),ultra-high reversible capacity(397.4 mA h g^(-1) at 100 mA g^(-1) after 700 cycles)and ultra-long cycling life(218.9 mA h g^(-1) at 2000 mA g^(-1) after 7300 cycles,123.1 mA h g^(-1) at3000 mA g^(-1) after 16500 cycles and full cell runs for 4000 cycles).Density functional theory calculation confirms that S/N/O tri-doping enhances the adsorption and diffusion of potassium ions,and in-situ Fourier-transform infrared explores explored the potassium storage mechanism of SNOC.

Quantitative Traits of Ion Beam Induced Mutagenesis in Triticum aestivum

[Objective] The aim of this study was to elucidate the quantitative traits of plants mutagenized by ion beam. [Method] The particular variation phenotypes, a- gronomic traits, and protein and wet gluten contents of progenies derived from the same ion beam induced mutant were investigated. [Result] Morphological polymor- phism existed in some individuals. Plant height, spike length and protein content were significantly influenced by ion beam, and effective tiller number and wet gluten content were moderately influenced. Multiple comparisons of all the indices within groups indicated genomic instability among these groups. Coefficient of variation im- plied the differences within group were very low. [Conclusion] Ion beam irradiation displayed characteristics of multi-directivity and non-directiveness. It aroused multiple variations in the same mutant. Instability among progeny indicates cells had different fate even in the same irradiated tissue. It may take several generations for mutants to stabilize particular phenotypes. The effects of ion beam irradiation may be the in- terrelated direct irradiation damage, indirect irradiation damage and late effect, such as bystander effect and adaptive response.

Novel Bilayer-Shelled N,O-Doped Hollow Porous Carbon Microspheres as High Performance Anode for Potassium-Ion Hybrid Capacitors

With the advantages of high energy/power density,long cycling life and low cost,dual-carbon potassium ion hybrid capacitors(PIHCs)have great potential in the field of energy storage.Here,a novel bilayer-shelled N,O-doped hollow porous carbon microspheres(NOHPC)anode has been prepared by a self-template method,which is consisted of a dense thin shell and a hollow porous spherical core.Excitingly,the NOHPC anode possesses a high K-storage capacity of 325.9 mA h g^(−1)at 0.1 A g^(−1)and a capacity of 201.1 mAh g^(−1)at 5 A g^(−1)after 6000 cycles.In combination with ex situ characterizations and density functional theory calculations,the high reversible capacity has been demonstrated to be attributed to the co-doping of N/O heteroatoms and porous structure improved K+adsorption and intercalation capabilities,and the stable long-cycling performance originating from the bilayer-shelled hollow porous carbon sphere structure.Meanwhile,the hollow porous activated carbon microspheres(HPAC)cathode with a high specific surface area(1472.65 m^(2)g^(−1))deriving from etching NOHPC with KOH,contributing to a high electrochemical adsorption capacity of 71.2 mAh g^(−1)at 1 A g^(−1).Notably,the NOHPC//HPAC PIHC delivers a high energy density of 90.1 Wh kg^(−1)at a power density of 939.6 W kg^(−1)after 6000 consecutive charge-discharge cycles.

Preliminary Studies on Base Substitutions and Repair of DNA Mismatch Damage Stimulated by Low Energy N^+ Ion Beam Implantation in Escherichia coli

Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.

Cu_2ZnSnS_4 thin films prepared by sulfurization of ion beam sputtered precursor and their electrical and optical properties

Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.