In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomica...In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.展开更多
The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is present...The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is presented.After the plasma treatment,the peak transconductance（gm） increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density（DT） and time constant（τT） of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.展开更多
基金supported by the National Basic Research Program of China(Grant No.2011CBA00601)the National Natural Science Foundation of China(Grant Nos.60625403,60806033,and 60925015)
文摘In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.
基金supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)
文摘The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is presented.After the plasma treatment,the peak transconductance（gm） increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density（DT） and time constant（τT） of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.
