Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

Negative Differential Resistance of Au-MgB2-Au Nanoscale Junctions

The electron transport of linear atomic chain trodes was investigated by using the density Green＇s function method. We have calculated of MgB2 sandwiched between Au（100） elecfunctional theory with the non-equilibrium the corresponding cohesion energy and conductance of junctions in different distance. It is found that, at the equilibrium position, the Au-B bond-length is 1.90 A, the B-Mg bond-length is 2.22 A, and the equilibrium conductance is 0.51G0 （Go=2e^2/h）. The transport channel is almost formed by the π antibonding orbitals, which was made up of the Px and Py orbital electrons of B and Mg atoms. In the voltage range of -1.5 to 1.5 V, the junctions show the metallic behaviors. When the voltage is larger than 1.5 V, the current decreases gradually and then negative differential resistance appears almost symmetrically on both positive and negative bias.

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

We explore the electronic and transport properties of zigzag graphene nanoribbons （GNRs） with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green＇s function technique. We observe robust negative di erential resistance （NDR） effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

By using first-principles calculations and nonequilibrium Green＇s function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance （NDR） behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.

Negative differential resistance and quantum oscillations in FeSb_2 with embedded antimony

We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance(CC-NDR) observed in currentvoltage characteristics below ～ 7 K is closely associated with the intrinsic transition ～ 5 K of FeSb2, which is, however,mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen(dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb_2 crystals.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.

Negative differential resistance behavior in doped C_(82) molecular devices

By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C82 and C80BN molecular devices but cannot be observed for C80N2 molecular device. A mechanism for the negative differential resistance behavior was suggested.

Analyzing the Effects of Key Design Factors of a Negative-Differential-Resistance(NDR)Microfluidic Oscillator–an Equivalent-Circuit-Model Approach

Numerical study on dynamic hydroelastic problems is usually rather complex due to the coupling of fluid and solid mechanics.Here,we demonstrate that the performance of a hydroelastic microfluidic oscillator can be analyzed using a simple equivalent circuit model.Previous studies reveal that its transition from the steady state to the oscillation state follows the negative-differential-resistance(NDR)mechanism.The performance is mainly determined by a bias fluidic resistor,and a pressurevariant resistor which further relates to the bending stiffness of the elastic diaphragm and the depth of the oscillation chamber.In this work,a numerical study is conducted to examine the effects of key design factors on the device robustness,the applicable fluid viscosity,the flow rate,and the transition pressure.The underlying physics is interpreted,providing a new perspective on hydroelastic oscillation problems.Relevant findings also provide design guidelines of the NDR fluidic oscillator.

Tunable Thermal Rectification and Negative Differential Thermal Resistance in Gas-Filled Nanostructure with Mechanically-Controllable Nanopillars

In this study,by using the nonequilibrium molecular dynamics and the kinetic theory,we examine the tailored nanoscale thermal transport via a gas-filled nanogap structure with mechanically-controllable nanopillars in one surface only,i.e.,changing nanopillar height.It is found that both the thermal rectification and negative differential thermal resistance(NDTR)effects can be substantially enhanced by controlling the nanopillar height.The maximum thermal rectification ratio can reach 340%and the△T range with NDTR can be significantly enlarged,which can be attributed to the tailored asymmetric thermal resistance via controlled adsorption in height-changing nanopillars,especially at a large temperature difference.These tunable thermal rectification and NDTR mechanisms provide insights for the design of thermal management systems.

The electric properties and the current-controlled differential negative resistance of cBN crystal

The electric properties of nonintentionally doped n-cubic boron nitride(cBN) crystal are investigated.The cBN crystal was transformed from hexagonal-boron nitride(h-BN) under high pressure(HP) and high temperature(HT) using magnesium powder as catalyst.At room temperature,the current-voltage(I-V) characteristics of cBN crystal are measured and found to be nonlinear.When the electric field is in the range of(1―1.5)×105 V/cm,the avalanche breakdown occurs inside the whole cBN crystal.At this same time,the bright blue-violet with the wavelength of 380―400 nm from the cBN crystal is observed.When measuring the I-V curve after breakdown of cBN crystal,the current-controlled differential negative resistance phenomenon is observed.The breakdown is repeatable.

Negative differential resistance behaviors in OPE derivatives combined C_(60) molecular junctions modulated with side groups

By applying non-equilibrium Green's functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of molecular junctions constructed by OPE derivatives with different side groups combined C60 molecules. The results show that the side groups play an important role in the properties of electron transport. Negative differential resistance (NDR) is observed in such devices. Especially for the molecule with electron-donating group ( OCH3), two NDR appear at different bias voltage regions. And the mechanism is proposed for the NDR behavior, owing to the shift of the molecular orbitals caused by the change in molecule charge.

Negative differential resistance in a molecular junction of carbon nanotube and benzene

We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at small bias. Moreover, the negative differential resistance behaviors can be observed significantly in the N-terminated carbon nanotube junction, whereas not in the other two cases.

Observation of negative differential resistance in diketopyrrolopyrrole-based copolymer films

Remarkable and repeatable negative differential resistance (NDR) phenomenon was observed in a metal-polymer-metal structure diode based on bishexyloxy-divinyl-benzene-alt-diketopyrrolopyrrole (C6DPPPPV),a type of donor-acceptor (D-A) conjugated copolymer.Thickness dependence of the devices implied that the observed NDR characteristics were bulk-controlled.The device performance was considered to depend on the slow trapping and releasing processes related to the local deep states,which was enhanced by the growth and thermal rupture of conducting filaments through the organic layer.The results suggest that the D-A conjugated copolymer is a promising memory material based on NDR effect.

Negative differential resistance in an(8,0)carbon/boron nitride nanotube heterojunction

Using the method combined non-equilibrium Green’s function with density functional theory,the electronic transport properties of an（8,0） carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated.In the current voltage characteristic of the heterojunction,negative differential resistance was found under positive and negative bias,which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage.These results are meaningful to modeling and simulating on related electronic devices.

Negative Differential Resistance in Atomic Carbon Chain-Graphene Junctions

We investigate the electronic transport properties of atomic carbon chain-graphene junctions by using the density-functionla theory combining with the non-equilibrium Green＇s functions. The results show that the transport properties are sensitively dependent on the contact geometry of carbon chain. From the calculated I-V curve we find negative differential resistance （NDR） in the two types of junctions. The NDR can be considered as a result of molecular orbitals moving related to the bias window.

Negative differential resistance in molecular devices: the role of molecule-electrode coupling

By applying nonequilibrium Green's function formalism combined with the first-principles density functional theory, we investigate the electronic transport in two molecular junctions constituted by a substituted oligo (phenylene ehtynylene) sand-wiched between two Au electrodes. Our calculations show that the weak molecule-electrode coupling is responsible for the observation of the negative differential resistance (NDR) effect in experiments. When the coupling is weak, the projected density of states (PDOS) of the molecule and the electrodes undergoes a mismatch-match-mismatch procedure, which increases and then decreases the transmission peak intensities, leading to a NDR effect. We also find that the localization/delocalization of the molecular orbitals and the change of charge state of the molecule have no direct relation with the NDR effect, because they change little as the voltage increases.

Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

By using a combined method of density functional theory and non-equilibrium Green＇s function formalism,we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons（APNRs）.The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal.Meanwhile,obvious negative differential resistance（NDR） behaviors are obtained by tuning the doping position and concentration.In particular,with reducing doping concentration,NDR peak position can enter into m V bias range.These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs.

Two-dimensional tetragonal ZnB: A nodalline semimetal with good transport properties

Nodal-line semimetals have become a research hot-spot due to their novel properties and great potential application in spin electronics. It is more challenging to find 2D nodal-line semimetals that can resist the spin–orbit coupling(SOC)effect. Here, we predict that 2D tetragonal Zn B is a nodal-line semimetal with great transport properties. There are two crossing bands centered on the S point at the Fermi surface without SOC, which are mainly composed of the pxy orbitals of Zn and B atoms and the pz orbitals of the B atom. Therefore, the system presents a nodal line centered on the S point in its Brillouin zone(BZ). And the nodal line is protected by the horizontal mirror symmetry M_(z). We further examine the robustness of a nodal line under biaxial strain by applying up to-4% in-plane compressive strain and 5% tensile strain on the Zn B monolayer, respectively. The transmission along the a direction is significantly stronger than that along the b direction in the conductive channel. The current in the a direction is as high as 26.63 μA at 0.8 V, and that in the b direction reaches 8.68 μA at 0.8 V. It is interesting that the transport characteristics of Zn B show the negative differential resistance(NDR) effect after 0.8 V along the a(b) direction. The results provide an ideal platform for research of fundamental physics of 2D nodal-line fermions and nanoscale spintronics, as well as the design of new quantum devices.

表面单分子的表征和操纵

本文对国内外表面单分子的表征和操纵的研究概况进行了简短评述,重点介绍了我们的一些基础研究结果,结合扫描隧道显微术和电子密度泛函理论模拟,在单分子C60的高分辨表征、C60在Si表面的吸附取向、富勒烯分子Dy@C82的空间和能量分辨、Pd纳米颗粒的无序抑制量子限域效应,制备基于C60的负微分电导和C59N的分子整流器件及单个CoPc分子自旋性质的调控等方面取得一些较重要的进展。

CMOS负阻单元逻辑电路及其发展前景

在回顾了多值逻辑(MVL)电路的优点、分析了共振隧穿器件(RTD)电路的特点和比较了各种类型负阻器件性能的基础上,提出了利用CMOS型负阻单元作为基础性器件设计并实现CMOS型逻辑电路的新概念,并指出了此研究领域的几个重点研究内容和方向。