High-voltage nMOS devices are fabricated successfully and the key technology parameters of the process are optimized by TCAD software. Experiment results show that the device＇s breakdown voltage is 114V, the threshol...High-voltage nMOS devices are fabricated successfully and the key technology parameters of the process are optimized by TCAD software. Experiment results show that the device＇s breakdown voltage is 114V, the threshold voltage and maximum driven ability are 1.02V and 7.5mA（W/L = 50）, respectively. Experimental results and simulation ones are compared carefully and a way to improve the breakdown performance is proposed.展开更多
The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is me...The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.展开更多
文摘High-voltage nMOS devices are fabricated successfully and the key technology parameters of the process are optimized by TCAD software. Experiment results show that the device＇s breakdown voltage is 114V, the threshold voltage and maximum driven ability are 1.02V and 7.5mA（W/L = 50）, respectively. Experimental results and simulation ones are compared carefully and a way to improve the breakdown performance is proposed.
文摘The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.
