In this study, the catalyst composition in binary ZnO-Al<sub>2</sub>O<sub>3</sub> catalyst was initially evaluated and optimized for methanol steam reforming. Then different Na contents were lo...In this study, the catalyst composition in binary ZnO-Al<sub>2</sub>O<sub>3</sub> catalyst was initially evaluated and optimized for methanol steam reforming. Then different Na contents were loaded by an incipient wetness impregnation method onto the optimized ZnAl catalyst. It was found that the activity was greatly enhanced by the modification of Na, which depended on the Na content in the catalyst. The methanol conversion was 96% on a 0.1 Na/0.4 ZnAl catalyst (GHSV = 14,040 h<sup>-</sup><sup>1</sup>, S/C = 1.4, 350°C), which was much higher with respect to a Na-free 0.4 ZnAl catalyst (74%). The remarkable improvement of activity was attributed to a weakening of the C-H bonds and clear of hydroxyl group by the Na dopant leading to an accelerated dehydrogenation of the reaction intermediates formed on ZnAl<sub>2</sub>O<sub>4</sub> spinel surface and thus the overall reaction.展开更多
Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect...Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.展开更多
文摘In this study, the catalyst composition in binary ZnO-Al<sub>2</sub>O<sub>3</sub> catalyst was initially evaluated and optimized for methanol steam reforming. Then different Na contents were loaded by an incipient wetness impregnation method onto the optimized ZnAl catalyst. It was found that the activity was greatly enhanced by the modification of Na, which depended on the Na content in the catalyst. The methanol conversion was 96% on a 0.1 Na/0.4 ZnAl catalyst (GHSV = 14,040 h<sup>-</sup><sup>1</sup>, S/C = 1.4, 350°C), which was much higher with respect to a Na-free 0.4 ZnAl catalyst (74%). The remarkable improvement of activity was attributed to a weakening of the C-H bonds and clear of hydroxyl group by the Na dopant leading to an accelerated dehydrogenation of the reaction intermediates formed on ZnAl<sub>2</sub>O<sub>4</sub> spinel surface and thus the overall reaction.
基金Natural Science Foundation (60576063)Science and Technology Project of Zhejiang province(2008F70015)
文摘Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.
