Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition （PECVD） at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and energy-dispersive spectrometer （EDS）, respectively. The results show that the film prepared at CH4/WF6 concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20-35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm^2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V （vs SCE）.

Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film

Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,

Deformation Strength of Nanocrystalline Thin Films

The data of deformation strength and microstructure of thin films of nanocrystalline Pd recently provided by Colla et al. have been analysed. It is shown that the properties of the films with cylindrical grains of30 nm diameter extending over a significant portion of the film thickness（≈90 nm） are quantitatively comparable to what is known from nanocrystalline bulk material. This is explained in terms of boundarymediated processes governing emission, storage, and recovery of dislocations.

Quantized Nanocrystalline CdTe Thin Films

Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110 degreesC. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from siH_4/H_2 Mixture

Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from Sill to Sill2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.

Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.