A fundamental problem in the direct manufacturing of flexible devices is the low melting temperature of flexible substrates,which hinders the development of flexible electronics.Proposed here is an electron-cyclotron-...A fundamental problem in the direct manufacturing of flexible devices is the low melting temperature of flexible substrates,which hinders the development of flexible electronics.Proposed here is an electron-cyclotron-resonance sputtering system that can batch-fabricate devices directly on flexible substrates under a low temperature by virtue of the polariton energy transfer between the plasma and the material.Flexible graphene nanosheet-embedded carbon(F-GNEC)films are manufactured directly on polyimide,polyethylene terephthalate,and polydimethylsiloxane,and how the substrate bias(electron energy),microwave power(plasma flux and energy),and magnetic field(electron flux)affect the nanostructure of the F-GNEC films is investigated,indicating that electron energy and flux contribute to the formation of standing graphene nanosheets in the film.The films have good uniformity of distribution in a large size(17 mm×17 mm),and tensile and angle sensors with a high gauge factor(0.92)and fast response(50 ms)for a machine hand are obtained by virtue of the unique nanostructure of the F-GNEC film.This work sheds light on the quantum manufacturing of carbon sensors and its applications for intelligent machine hands and virtual-reality technology.展开更多
Here, large-scale and uniform hexagonal zinc oxide(ZnO) nanosheet films were deposited onto indium tin oxide(ITO)-coated transparent conducting glass substrates via a facile galvanic displacement deposition process. C...Here, large-scale and uniform hexagonal zinc oxide(ZnO) nanosheet films were deposited onto indium tin oxide(ITO)-coated transparent conducting glass substrates via a facile galvanic displacement deposition process. Compared with other commonly used solution methods, this process avoids high temperature and electric power as well as supporting agents to make it simple and cost-effective. The as-fabricated ZnO nanosheet films have uniform hexagonal wurtzite structure. The photoelectrochemical(PEC) cell based on ZnO nanosheet film/ITO photoelectrode was also fabricated and its performance was improved by optimizing the solution concentration. A higher photocurrent density of*500 l A cm^(-2)under AM 1.5 G simulated illumination of 100 m W cm^(-2)with zero bias potential(vs. Ag/AgCl electrode) was obtained, which may ascribe to the increased surface-to-volume ratio of disordered Zn O nanosheet arrays. Our developed method may be used to deposit other oxide semiconductors, and the Zn O nanosheet film/ITO PEC cell can be used to design low-cost optoelectronic and photoelectrochemical devices.展开更多
In this paper,2D single-crystalline ZnO nanosheets thin film was fabricated successfully on silicon wafer by a simple two-step approach.XRD,SEM and TEM were used to characterize the phase structures and morphologies o...In this paper,2D single-crystalline ZnO nanosheets thin film was fabricated successfully on silicon wafer by a simple two-step approach.XRD,SEM and TEM were used to characterize the phase structures and morphologies of ZnO nanosheets film.展开更多
阳极氧化法可以直接在铜集流体表面生成铜氧化物转化膜以提高电极性能。采用恒电流阳极氧化一步法和两步法在高纯铜片上制备铜氧化物转化膜,对转化膜的形貌和物相进行表征和分析,并探索其比电容特性。结果表明:通过对电流密度、温度和...阳极氧化法可以直接在铜集流体表面生成铜氧化物转化膜以提高电极性能。采用恒电流阳极氧化一步法和两步法在高纯铜片上制备铜氧化物转化膜,对转化膜的形貌和物相进行表征和分析,并探索其比电容特性。结果表明:通过对电流密度、温度和添加剂的优化,采用一步法可以直接在高纯铜片表面获得CuO和Cu2O两相共存的纳米片阵列转化膜;阳极氧化两步法首先在高纯铜片获得氢氧化铜转化膜,然后通过煅烧处理得到铜氧化物纳米线阵列转化膜,组成主要为CuO,伴有少量的Cu2O。两种方法获得的铜氧化物转化膜电极的面积比电容在1m A/cm^2的电流密度下,分别能达到108 m F/cm^2和96 m F/cm^2。同时由于纳米线阵列转化膜具有较高的比表面积,是一种理想的基底材料,通过进一步的复合改性有望获得更佳的电化学性能。展开更多
为了提高TiO_(2)薄膜的光学与电化学性能,文章利用一步水热法在P25纳米晶薄膜(P-film)的基础上制备了新颖的三维网络结构TiO_(2)纳米片薄膜(S-film)。通过场发射扫描电子显微镜(field emission scanning electron microscope,FESEM)和...为了提高TiO_(2)薄膜的光学与电化学性能,文章利用一步水热法在P25纳米晶薄膜(P-film)的基础上制备了新颖的三维网络结构TiO_(2)纳米片薄膜(S-film)。通过场发射扫描电子显微镜(field emission scanning electron microscope,FESEM)和场发射透射电子显微镜(field emission transmission electron microscope,FETEM)表征揭示S-film由P25颗粒转化而来,并可以通过水热时间调控S-film的厚度。紫外-可见漫反射光谱显示,在300~800 nm波长范围内S-film的引入有利于薄膜光散射性能的提升,且散射能力随着S-film薄膜厚度的增加而增强。光伏性能测试表明,一定厚度的S-film有利于提高染料敏化太阳能电池的光电转换效率,电化学阻抗谱进一步揭示S-film能够提高光生电子-空穴对的分离效率。展开更多
Sulfosalicylic acid(SSA) was used as an intercalation agent and an excellent antenna to synthesize layered rare-earth hydroxide(LRH) materials and directly obtain SSA-modified terbium-doped ytterbium hydroxide nanoshe...Sulfosalicylic acid(SSA) was used as an intercalation agent and an excellent antenna to synthesize layered rare-earth hydroxide(LRH) materials and directly obtain SSA-modified terbium-doped ytterbium hydroxide nanosheets by mechanical exfoliation. The crystal structure and morphologies of the LRHs and nanosheets were determined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The particle size and zeta potential of the prepared nanosheets were also analyzed. The as-prepared nanosheets exhibited excellent luminescent properties. The positively charged nanosheets were electrophoretically deposited on a conductive glass to form a thin film. The luminescence of this thin film can be quenched by chromate(CrO_4^(2–)) and bilirubin(BR), which shows good sensing properties. The quenching mechanism of the sensing film by CrO_4^(2–) and BR was discussed based on the spectra and structure of the film.展开更多
基金support of the National Natural Science Foundation of China(Grant Nos.52275565,NSFC-JSPS:52011540005,and 62104155)the Natural Science Foundation of Guangdong Province(Grant No.2022A1515011667)the Guangdong Kangyi Special Fund(Grant No.2020KZDZX1173).
文摘A fundamental problem in the direct manufacturing of flexible devices is the low melting temperature of flexible substrates,which hinders the development of flexible electronics.Proposed here is an electron-cyclotron-resonance sputtering system that can batch-fabricate devices directly on flexible substrates under a low temperature by virtue of the polariton energy transfer between the plasma and the material.Flexible graphene nanosheet-embedded carbon(F-GNEC)films are manufactured directly on polyimide,polyethylene terephthalate,and polydimethylsiloxane,and how the substrate bias(electron energy),microwave power(plasma flux and energy),and magnetic field(electron flux)affect the nanostructure of the F-GNEC films is investigated,indicating that electron energy and flux contribute to the formation of standing graphene nanosheets in the film.The films have good uniformity of distribution in a large size(17 mm×17 mm),and tensile and angle sensors with a high gauge factor(0.92)and fast response(50 ms)for a machine hand are obtained by virtue of the unique nanostructure of the F-GNEC film.This work sheds light on the quantum manufacturing of carbon sensors and its applications for intelligent machine hands and virtual-reality technology.
基金supported by the National Major Basic Research Project of 2012CB934302the National 863 Program2011AA050518+1 种基金the Natural Science Foundation of China(Grant No.1117419711574203 and 61234005)
文摘Here, large-scale and uniform hexagonal zinc oxide(ZnO) nanosheet films were deposited onto indium tin oxide(ITO)-coated transparent conducting glass substrates via a facile galvanic displacement deposition process. Compared with other commonly used solution methods, this process avoids high temperature and electric power as well as supporting agents to make it simple and cost-effective. The as-fabricated ZnO nanosheet films have uniform hexagonal wurtzite structure. The photoelectrochemical(PEC) cell based on ZnO nanosheet film/ITO photoelectrode was also fabricated and its performance was improved by optimizing the solution concentration. A higher photocurrent density of*500 l A cm^(-2)under AM 1.5 G simulated illumination of 100 m W cm^(-2)with zero bias potential(vs. Ag/AgCl electrode) was obtained, which may ascribe to the increased surface-to-volume ratio of disordered Zn O nanosheet arrays. Our developed method may be used to deposit other oxide semiconductors, and the Zn O nanosheet film/ITO PEC cell can be used to design low-cost optoelectronic and photoelectrochemical devices.
基金supports by Beijing Natural Science Foundation(2062013)Tsinghua Basic Research Foundation(JCpy2005055).
文摘In this paper,2D single-crystalline ZnO nanosheets thin film was fabricated successfully on silicon wafer by a simple two-step approach.XRD,SEM and TEM were used to characterize the phase structures and morphologies of ZnO nanosheets film.
文摘阳极氧化法可以直接在铜集流体表面生成铜氧化物转化膜以提高电极性能。采用恒电流阳极氧化一步法和两步法在高纯铜片上制备铜氧化物转化膜,对转化膜的形貌和物相进行表征和分析,并探索其比电容特性。结果表明:通过对电流密度、温度和添加剂的优化,采用一步法可以直接在高纯铜片表面获得CuO和Cu2O两相共存的纳米片阵列转化膜;阳极氧化两步法首先在高纯铜片获得氢氧化铜转化膜,然后通过煅烧处理得到铜氧化物纳米线阵列转化膜,组成主要为CuO,伴有少量的Cu2O。两种方法获得的铜氧化物转化膜电极的面积比电容在1m A/cm^2的电流密度下,分别能达到108 m F/cm^2和96 m F/cm^2。同时由于纳米线阵列转化膜具有较高的比表面积,是一种理想的基底材料,通过进一步的复合改性有望获得更佳的电化学性能。
文摘为了提高TiO_(2)薄膜的光学与电化学性能,文章利用一步水热法在P25纳米晶薄膜(P-film)的基础上制备了新颖的三维网络结构TiO_(2)纳米片薄膜(S-film)。通过场发射扫描电子显微镜(field emission scanning electron microscope,FESEM)和场发射透射电子显微镜(field emission transmission electron microscope,FETEM)表征揭示S-film由P25颗粒转化而来,并可以通过水热时间调控S-film的厚度。紫外-可见漫反射光谱显示,在300~800 nm波长范围内S-film的引入有利于薄膜光散射性能的提升,且散射能力随着S-film薄膜厚度的增加而增强。光伏性能测试表明,一定厚度的S-film有利于提高染料敏化太阳能电池的光电转换效率,电化学阻抗谱进一步揭示S-film能够提高光生电子-空穴对的分离效率。
文摘Sulfosalicylic acid(SSA) was used as an intercalation agent and an excellent antenna to synthesize layered rare-earth hydroxide(LRH) materials and directly obtain SSA-modified terbium-doped ytterbium hydroxide nanosheets by mechanical exfoliation. The crystal structure and morphologies of the LRHs and nanosheets were determined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The particle size and zeta potential of the prepared nanosheets were also analyzed. The as-prepared nanosheets exhibited excellent luminescent properties. The positively charged nanosheets were electrophoretically deposited on a conductive glass to form a thin film. The luminescence of this thin film can be quenched by chromate(CrO_4^(2–)) and bilirubin(BR), which shows good sensing properties. The quenching mechanism of the sensing film by CrO_4^(2–) and BR was discussed based on the spectra and structure of the film.
