Negative Resistance and Its Impact on a RC-DC Driven Electric Circuit

It is a common misconception that electric “resistance” always is a positive defined electric element. i.e., the plot of the voltage across the resistor, V vs. its current, i is a slanted straight line with a positive slope. Esaki diode also known as tunnel diode is an exception to this character. For a certain voltage range, the current recedes resulting in a line with a negative slope;it is interpreted as negative resistance. In this research flavored report, we investigate the impact of the negative resistance in a typical classic electric circuit. E.g., a tunnel diode, D is inserted in a classic electric circuit that is composed of an ohmic resistor, R and a capacitor, C which are all in series with a DC power supply. The circuit equation for the RCD circuit is a nonlinear ordinary differential equation (NLODE). In line with the ever-growing popular Computer Algebra System (CAS), this is solved numerically utilizing two distinctly different CASs. The consistency of the solutions confidently leads to the understanding of the impact of the negative resistance. The circuit characteristics are compared to the classic analogous RC circuit. The report embodies an atlas of characteristics of the circuits making the analysis visually comprehensible.

Impact of the Negative Resistance on the Characteristics of a Tunnel Diode-Inductive Circuit

The I-V diagram of a tunnel diode inherits a voltage range corresponding to a specific current domain with a negative slope. Within this range, the electric resistance is negatively impacting the characteristics of the electric circuits. One such circuit containing a tunnel diode in series with an inductor driven by a DC source is considered. The negative resistance significantly alters the characteristics of the circuit. In this research-oriented project, we unveil these characteristics comparing them to the classic inductive circuit with an ohmic resistor. This project stems from our previous work [1] and may be considered an application of the tunnel diode embodying unseen surprises. The circuit analysis is entirely based on utilizing a Computer Algebra System (CAS) specifically Mathematica. Without a CAS, the completion of the project wouldn’t have been possible otherwise.

Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

Reliable sensors based on graphene textile with negative resistance variation in three dimensions

The weft-knitted reduced graphene oxide(r-GO)textile that is made up of many conductive r-GO coated fibers was successfully prepared dependent on the electrospray deposition technique.Interestingly,the r-GO textile presents negative resistance variation not only in axial direction as the pressure increases but also in transverse direction as the lateral stretch increases which makes it has the advantage to fabricate the reliable sensors based on strain-resistance effect.The transverse-strain and pressure sensors based on the r-GO textiles all show the excellent sensing characteristics such as high sensitivity,reliability,and good durability,etc.The maximum gauge factors(GF)of the transverse-sensor are 27.1 and 153.5 in the x-and/-direction,respectively.And the practical detection range can up to 40%in the x-direction and 35%in the y-direction,respectively.The r-GO textile pressure sensor also shows high sensitivity for a broad pressure range that with a GF up to 716.8 kPa-1 for less than 4.5 kPa region and still has more sensitive pressure sensing characteristics even the pressure goes up to 14 kPa.Based on those good performances of r-GO textile sensors,its potential applications in human body states monitoring have been studied.

Differential negative resistance effect of output characteristics in deep sub-micrometer wurtzite AlGaN/GaN MODFETs

We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 urn, respectively. In the output characteristics we found a differential negative resistance effect. That is, as VDS is a constant, initially, VDS increases with increasing VDS. When VDS exceeds a certain critical value, IDS decreases with increasing VDS. The analysis for velocity-field characteristics in wurtzite CaN, the distributions of the electric field and the electron velocity in the two dimensional electron gas channel indicates that the differential negative resistance effect of the electron average velocity results in the differential negative resistance effect of the output characteristics. The transient transport also is related to the differential negative resistance effect of the output characteristics. This effect only can be observed in the devices with very short channel.

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

By using first-principles calculations and nonequilibrium Green＇s function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance （NDR） behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.

Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application

We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.

Negative Temperature Coefficient of Resistivity in Bulk Nanostructured Ag

The change of the temperature coefficient of resistivity (a) with the particle size, dp, and the grain size, dc, in the nanostructured Ag bulk samples was investigated. dp and dc were controlled by heating the nano-Ag powders over the temperature range from 393 to 453 K. The electrical resistance measurements of the nanostructured Ag bulk samples obtained by compacting the Ag powders after heat treatments showed a change in the sign of a with dP and dc. When dp and dc are smaller or equal to 18 and 11 nm below room temperature or 20 and 12 nm above room temperature, respectively, the sign of the temperature coefficient of resistivity changes from positive to negative. The negative a arises mainly from the high resistivity induced by the particle interfaces with very lowly ordered or even disordered structure, a large volume fraction of interfaces and impurities existing in the interfaces, and the quantum size effect appearing in the nano-Ag grains.

Two-dimensional tetragonal ZnB: A nodalline semimetal with good transport properties

Nodal-line semimetals have become a research hot-spot due to their novel properties and great potential application in spin electronics. It is more challenging to find 2D nodal-line semimetals that can resist the spin–orbit coupling(SOC)effect. Here, we predict that 2D tetragonal Zn B is a nodal-line semimetal with great transport properties. There are two crossing bands centered on the S point at the Fermi surface without SOC, which are mainly composed of the pxy orbitals of Zn and B atoms and the pz orbitals of the B atom. Therefore, the system presents a nodal line centered on the S point in its Brillouin zone(BZ). And the nodal line is protected by the horizontal mirror symmetry M_(z). We further examine the robustness of a nodal line under biaxial strain by applying up to-4% in-plane compressive strain and 5% tensile strain on the Zn B monolayer, respectively. The transmission along the a direction is significantly stronger than that along the b direction in the conductive channel. The current in the a direction is as high as 26.63 μA at 0.8 V, and that in the b direction reaches 8.68 μA at 0.8 V. It is interesting that the transport characteristics of Zn B show the negative differential resistance(NDR) effect after 0.8 V along the a(b) direction. The results provide an ideal platform for research of fundamental physics of 2D nodal-line fermions and nanoscale spintronics, as well as the design of new quantum devices.

Preparation and Characteristics of Cu/Al_2O_3/MgF_2/Au Tunnel Junction

The fabrication process of Cu/Al2O3/MgF2/Au double-barrier metal/insulator/metal junction （DMIMJ） was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250-700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al2O3/Au junction. The light emission efficiency of this junction ranges from 0.7×10^-5-2.0×10^-5, which is 1 to 2 orders higher than that of the single-barrier Al/Al2O3/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.

Design of a 5.305 GHz Dielectric Resonator Oscillator with Simulation and Optimization

The design of a 5.305 GHz series feedback free running dielectric resonator oscillator （DRO） is presented. Its simulation and optimization are realized by obtaining the unloaded Q factor of the cavity dielectric resonator （DR） and analyzing the linear and nonlinear models of the DRO. CAD packages of DR_Rez and Agilent Advance Design System （ADS） are used and the best tradeoff among the output power, phase noise, and frequency stability is achieved. With the result of simulation, a physical oscillator prototype is constructed. The measured results show the good agreement with those of simulation.

Negative regulation of resistance protein-mediated immunity by master transcription factors SARD_1 and CBP60g

Summary Salicylic acid （SA） is an essential defence hormone in plants. Upon pathogen infection, induced biosynthesis of SA is mediated by Isochorismate synthase 1 （ICS1）, whose gene transcription is controlled mainly through two redundant transcription factors, SAR Deficient 1 （SARD0 and Calmodulin- binding protein 6o-like g （CBP60g）.

4.3 THz quantum-well photodetectors with high detection sensitivity

We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector （QWP） device with a peak response frequency of 4.3 THz. The negative differential resistance （NDR） phenomenon is found in the dark currentvoltage （I-V） curve in the current sweeping measurement mode, from which the breakdown voltage is determined. The photocurrent spectra and blackbody current responsivities at different voltages are measured. Based on the experimental data, the peak responsivity of 0.3 A/W （at 0.15 V, 8 K） is derived, and the detection sensitivity is higher than 10u Jones, which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers. We attribute the high detection performance of the device to the small ohmic contact resistance of -2Ω and the big breakdown bias.

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

AlN/GaN resonant tunneling diodes(RTDs)were grown separately on freestanding Ga N(FS-GaN)substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy(PA-MBE).Room temperature negative differential resistance(NDR)was obtained under forward bias for the RTDs grown on FS-GaN substrates,with the peak current densities(Jp)of 175-700 kA/cm^(2)and peak-to-valley current ratios(PVCRs)of 1.01-1.21.Two resonant peaks were also observed for some RTDs at room temperature.The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically,showing that lower dislocation densities,flatter surface morphology,and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

In this article, the spin-dependent electronic and transport properties of the armchair boron–phosphorous nanoribbons（ABPNRs） are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spinfiltering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF （radio frequency） output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.

Negative differential resistance in an(8,0)carbon/boron nitride nanotube heterojunction

Using the method combined non-equilibrium Green’s function with density functional theory,the electronic transport properties of an（8,0） carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated.In the current voltage characteristic of the heterojunction,negative differential resistance was found under positive and negative bias,which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage.These results are meaningful to modeling and simulating on related electronic devices.

Tunable Thermal Rectification and Negative Differential Thermal Resistance in Gas-Filled Nanostructure with Mechanically-Controllable Nanopillars

In this study,by using the nonequilibrium molecular dynamics and the kinetic theory,we examine the tailored nanoscale thermal transport via a gas-filled nanogap structure with mechanically-controllable nanopillars in one surface only,i.e.,changing nanopillar height.It is found that both the thermal rectification and negative differential thermal resistance(NDTR)effects can be substantially enhanced by controlling the nanopillar height.The maximum thermal rectification ratio can reach 340%and the△T range with NDTR can be significantly enlarged,which can be attributed to the tailored asymmetric thermal resistance via controlled adsorption in height-changing nanopillars,especially at a large temperature difference.These tunable thermal rectification and NDTR mechanisms provide insights for the design of thermal management systems.