For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing...For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln （n=0-2） radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn （n=1, 2） radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.展开更多
The emission manners of organic light-emitting diodes（OLEDs） have experienced almost three-decade evolution.In this review,we briefly summarized the emission manners of OLEDs including：（ⅰ） emission from singlet ...The emission manners of organic light-emitting diodes（OLEDs） have experienced almost three-decade evolution.In this review,we briefly summarized the emission manners of OLEDs including：（ⅰ） emission from singlet exciton;（ⅱ） emission from triplet exciton;（ⅲ） emission from singlet exciton converted from triplet exciton.Then we introduced a new type of OLEDs with the emission from doublet exciton,wherein organic neutral radicals are used as emitters.Due to the spin-allowed transition of doublet excitons,using neutral radicals as emitters is believed to be a new way to break the 25%upper limit of internal quantum efficiency of OLEDs.The progress of emissive stable neutral radicals is also shortly reviewed.展开更多
文摘For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln （n=0-2） radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn （n=1, 2） radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.
基金financial support from the Ministry of Science and Technology of China(No.2015CB655003)National Natural Science Foundation of China(No.61275036)
文摘The emission manners of organic light-emitting diodes（OLEDs） have experienced almost three-decade evolution.In this review,we briefly summarized the emission manners of OLEDs including：（ⅰ） emission from singlet exciton;（ⅱ） emission from triplet exciton;（ⅲ） emission from singlet exciton converted from triplet exciton.Then we introduced a new type of OLEDs with the emission from doublet exciton,wherein organic neutral radicals are used as emitters.Due to the spin-allowed transition of doublet excitons,using neutral radicals as emitters is believed to be a new way to break the 25%upper limit of internal quantum efficiency of OLEDs.The progress of emissive stable neutral radicals is also shortly reviewed.
