We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopa...We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.展开更多
In this study, we reported the design, fabrication, and characterization of well- ordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single- crystalline NiSi2 nanowires on （001）Si substrat...In this study, we reported the design, fabrication, and characterization of well- ordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single- crystalline NiSi2 nanowires on （001）Si substrates. The epitaxial NiSi2 with {111} facets was found to be the first and the only silicide phase formed inside the Si nanowires after annealing at a temperature as low as 300℃. Upon annealing at 500 ℃ for 4 h, the residual parts of Si nanowires were completely consumed and the NiSi2/Si heterostructured nanowires were transformed to fully silicided NiSi2 nanowires. XRD, TEM and SAED analyses indicated that all the NiSi2 nanowires were single crystalline and their axial orientations were parallel to the [001] direction. The obtained vertically-aligned NiSi2 nanowires, owing to their well-ordered arrangement, single-crystalline structure, and low effective work function, exhibit excellent field-emission properties with a very low turn-on field of 1.1 V/m. The surface wettability of the nanowires was found to switch from hydrophobic to hydrophilic after the formation of NiSi2 phase and the measured water contact angle decreased with increasing extent of Ni silicidation. The increased hydrophilicity can be explained by the Wenzel model. The obtained results present the exciting prospect that the new approach proposed here will provide the capability to fabricate other highly-ordered, vertically-aligned fully silicided nanowire arrays and may offer potential applications in constructing vertical silicide-based nanodevices.展开更多
The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu t...The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.展开更多
The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2demonstrate the possibility of using NiSi2to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposit...The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2demonstrate the possibility of using NiSi2to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2layers synthesized by ion implantation,and the roughness of the NiSi2layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61674161the Open Project of State Key Laboratory of Functional Materials for Informatics
文摘We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
文摘In this study, we reported the design, fabrication, and characterization of well- ordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single- crystalline NiSi2 nanowires on （001）Si substrates. The epitaxial NiSi2 with {111} facets was found to be the first and the only silicide phase formed inside the Si nanowires after annealing at a temperature as low as 300℃. Upon annealing at 500 ℃ for 4 h, the residual parts of Si nanowires were completely consumed and the NiSi2/Si heterostructured nanowires were transformed to fully silicided NiSi2 nanowires. XRD, TEM and SAED analyses indicated that all the NiSi2 nanowires were single crystalline and their axial orientations were parallel to the [001] direction. The obtained vertically-aligned NiSi2 nanowires, owing to their well-ordered arrangement, single-crystalline structure, and low effective work function, exhibit excellent field-emission properties with a very low turn-on field of 1.1 V/m. The surface wettability of the nanowires was found to switch from hydrophobic to hydrophilic after the formation of NiSi2 phase and the measured water contact angle decreased with increasing extent of Ni silicidation. The increased hydrophilicity can be explained by the Wenzel model. The obtained results present the exciting prospect that the new approach proposed here will provide the capability to fabricate other highly-ordered, vertically-aligned fully silicided nanowire arrays and may offer potential applications in constructing vertical silicide-based nanodevices.
文摘The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.
基金Project supported by the National Natural Science Foundation of China(No.61076051)the Beijing Natural Science Foundation(No. 2102042)
文摘The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2demonstrate the possibility of using NiSi2to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2layers synthesized by ion implantation,and the roughness of the NiSi2layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.
