高压绝缘栅双极晶体管(IGBT)存在寄生晶闸管,易发生闩锁失效。对p^+深阱的参数进行了优化,制备了3 300 V p^+深阱平面栅非穿通IGBT(NPT-IGBT)。对NPT-IGBT的静态特性进行了仿真,结果表明,当p^+结深约为5.5μm,p^+深阱距离多晶硅5μm时,...高压绝缘栅双极晶体管(IGBT)存在寄生晶闸管,易发生闩锁失效。对p^+深阱的参数进行了优化,制备了3 300 V p^+深阱平面栅非穿通IGBT(NPT-IGBT)。对NPT-IGBT的静态特性进行了仿真,结果表明,当p^+结深约为5.5μm,p^+深阱距离多晶硅5μm时,p^+深阱并未影响到沟道处p阱掺杂浓度,对IGBT静态特性无明显影响。制备了不同p^+深阱注入剂量的IGBT芯片,并将芯片封装为模块,分别进行常温和高温下的静态和动态参数测试。测试结果表明,当p^+深阱剂量低时,常温下模块关断失效;而p^+深阱剂量增大时可通过常温、高温开关测试,并通过10μs短路测试。p^+深阱注入剂量对静态特性无明显影响,对动态特性改善明显,可满足应用要求。展开更多
The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking ca...The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.展开更多
文摘高压绝缘栅双极晶体管(IGBT)存在寄生晶闸管,易发生闩锁失效。对p^+深阱的参数进行了优化,制备了3 300 V p^+深阱平面栅非穿通IGBT(NPT-IGBT)。对NPT-IGBT的静态特性进行了仿真,结果表明,当p^+结深约为5.5μm,p^+深阱距离多晶硅5μm时,p^+深阱并未影响到沟道处p阱掺杂浓度,对IGBT静态特性无明显影响。制备了不同p^+深阱注入剂量的IGBT芯片,并将芯片封装为模块,分别进行常温和高温下的静态和动态参数测试。测试结果表明,当p^+深阱剂量低时,常温下模块关断失效;而p^+深阱剂量增大时可通过常温、高温开关测试,并通过10μs短路测试。p^+深阱注入剂量对静态特性无明显影响,对动态特性改善明显,可满足应用要求。
基金supported by the Major Specialized Program of National Science and Technology,China(No.2011ZX02706-003)
文摘The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.
