A 10 Gb/s OEIC（optoelectronic integrated circuit）optical receiver front-end has been studied and fabricated based on theφ-76 mm GaAs PHEMT process;this is the first time that a limiting amplifier（LA）has been desi...A 10 Gb/s OEIC（optoelectronic integrated circuit）optical receiver front-end has been studied and fabricated based on theφ-76 mm GaAs PHEMT process;this is the first time that a limiting amplifier（LA）has been designed and realized using depletion mode PHEMT.An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier（TIA）has been established and optimized by simu- lation software ATLAS.The photodiode has a bandwidth of 10 GHz,a capacitance of 3 fF/μm and a photosensitive area of 50×50μm^2.The whole chip has an area of 1511×666μm^2.The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS.The chip area is 1950×1910μm^2 and the measured results demonstrate an input dynamic range of 34 dB（10–500 mVpp）with constant output swing of 500 mVpp.展开更多
基金supported by the National Key Laboratory of Monolithic Integrated Circuits and Modules Foundation of China(No.9140C1406020708)
文摘A 10 Gb/s OEIC（optoelectronic integrated circuit）optical receiver front-end has been studied and fabricated based on theφ-76 mm GaAs PHEMT process;this is the first time that a limiting amplifier（LA）has been designed and realized using depletion mode PHEMT.An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier（TIA）has been established and optimized by simu- lation software ATLAS.The photodiode has a bandwidth of 10 GHz,a capacitance of 3 fF/μm and a photosensitive area of 50×50μm^2.The whole chip has an area of 1511×666μm^2.The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS.The chip area is 1950×1910μm^2 and the measured results demonstrate an input dynamic range of 34 dB（10–500 mVpp）with constant output swing of 500 mVpp.
