Salicylic acid(SA)is an endogenous regulatorymolecule for plant flowering and thermogene-sis,and has been reported as a signal moleculeof plant disease resistance in the plant-pathogen interaction.Exogenous SA is capa...Salicylic acid(SA)is an endogenous regulatorymolecule for plant flowering and thermogene-sis,and has been reported as a signal moleculeof plant disease resistance in the plant-pathogen interaction.Exogenous SA is capableof inducing disease resistance in a wide range ofplants.This study was to evaluate the poten-tial for SA to induce resistance of rice seedlings展开更多
A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significa...A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.展开更多
The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica...The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.展开更多
InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF...InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.展开更多
文摘Salicylic acid(SA)is an endogenous regulatorymolecule for plant flowering and thermogene-sis,and has been reported as a signal moleculeof plant disease resistance in the plant-pathogen interaction.Exogenous SA is capableof inducing disease resistance in a wide range ofplants.This study was to evaluate the poten-tial for SA to induce resistance of rice seedlings
文摘A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.
文摘The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.
基金supported by the National Natural Science Foundation of China(No.61306113)
文摘InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.
