To improve the dynamic performance of conventional deadbeat predictive current control(DPCC)under parameter mismatch,especially eliminate the current overshoot and oscillation during torque mutation,it is necessary to...To improve the dynamic performance of conventional deadbeat predictive current control(DPCC)under parameter mismatch,especially eliminate the current overshoot and oscillation during torque mutation,it is necessary to enhance the robustness of DPCC against various working conditions.However,the disturbance from parameter mismatch can deteriorate the dynamic performance.To deal with the above problem,firstly,traditional DPCC and the parameter sensitivity of DPCC are introduced and analyzed.Secondly,an extended state observer(ESO)combined with DPCC method is proposed,which can observe and suppress the disturbance due to various parameter mismatch.Thirdly,to improve the accuracy and stability of ESO,an adaptive extended state observer(AESO)using fuzzy controller based on ESO,is presented,and combined with DPCC method.The improved DPCC-AESO can switch the value of gain coefficients with fuzzy control,accelerating the current response speed and avoid the overshoot and oscillation,which improves the robustness and stability performance of SPMSM.Finally,the three methods,as well as conventional DPCC method,DPCC-ESO method,DPCC-AESO method,are comparatively analyzed in this paper.The effectiveness of the proposed two methods are verified by simulation and experimental results.展开更多
相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗。然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感。因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电...相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗。然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感。因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电感的概念,将栅极回路寄生电感、功率回路寄生电感以及共源极寄生电感等效成3个集总电感,并且从关断过电压、开通过电流及开关损耗等3个方面,对这3个电感对Si C MOSFET开关性能的影响进行了系统的对比研究。研究表明:共源极寄生电感对开关的影响最大,功率回路寄生电感次之,而栅极回路寄生电感影响最小。最后,基于实验分析结果,为高速开关电路的布局提出了一些值得借鉴的意见。展开更多
Os–Ir–Al alloy was fabricated by powder metallurgy technique.IrAl and OsIr interalloys were synthesized to reduce the Al evaporation and ensure the composition of the ternary alloy.Analysis on microstructures shows ...Os–Ir–Al alloy was fabricated by powder metallurgy technique.IrAl and OsIr interalloys were synthesized to reduce the Al evaporation and ensure the composition of the ternary alloy.Analysis on microstructures shows that each component is distributed homogeneously,and the green density reaches 94.9%.Ba–W cathodes with Os–Ir–Al alloy magnetic sputtered on the tips are prepared and directly current density tests are carried out on these cathodes.It is found that at 1,050℃,the average zero field emission density of the cathode reaches up to 20 Aácm-2.The improvements of cathodic current density and stability may indicate the prosperous application of Os–Ir–Al alloy on cathode.展开更多
基金supported by the National Natural Science Foundation of China(No.52005037).
文摘To improve the dynamic performance of conventional deadbeat predictive current control(DPCC)under parameter mismatch,especially eliminate the current overshoot and oscillation during torque mutation,it is necessary to enhance the robustness of DPCC against various working conditions.However,the disturbance from parameter mismatch can deteriorate the dynamic performance.To deal with the above problem,firstly,traditional DPCC and the parameter sensitivity of DPCC are introduced and analyzed.Secondly,an extended state observer(ESO)combined with DPCC method is proposed,which can observe and suppress the disturbance due to various parameter mismatch.Thirdly,to improve the accuracy and stability of ESO,an adaptive extended state observer(AESO)using fuzzy controller based on ESO,is presented,and combined with DPCC method.The improved DPCC-AESO can switch the value of gain coefficients with fuzzy control,accelerating the current response speed and avoid the overshoot and oscillation,which improves the robustness and stability performance of SPMSM.Finally,the three methods,as well as conventional DPCC method,DPCC-ESO method,DPCC-AESO method,are comparatively analyzed in this paper.The effectiveness of the proposed two methods are verified by simulation and experimental results.
文摘相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗。然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感。因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电感的概念,将栅极回路寄生电感、功率回路寄生电感以及共源极寄生电感等效成3个集总电感,并且从关断过电压、开通过电流及开关损耗等3个方面,对这3个电感对Si C MOSFET开关性能的影响进行了系统的对比研究。研究表明:共源极寄生电感对开关的影响最大,功率回路寄生电感次之,而栅极回路寄生电感影响最小。最后,基于实验分析结果,为高速开关电路的布局提出了一些值得借鉴的意见。
基金supported by the Special Fund Project for Technology Research and Development of Scientific Research Institute (No. 2012EG115001)
文摘Os–Ir–Al alloy was fabricated by powder metallurgy technique.IrAl and OsIr interalloys were synthesized to reduce the Al evaporation and ensure the composition of the ternary alloy.Analysis on microstructures shows that each component is distributed homogeneously,and the green density reaches 94.9%.Ba–W cathodes with Os–Ir–Al alloy magnetic sputtered on the tips are prepared and directly current density tests are carried out on these cathodes.It is found that at 1,050℃,the average zero field emission density of the cathode reaches up to 20 Aácm-2.The improvements of cathodic current density and stability may indicate the prosperous application of Os–Ir–Al alloy on cathode.
