Initial testing of ohmic heating through double flux swing during electron cyclotron start-up in the QUEST spherical tokamak

A power-supply system was developed for Ohmic heating(OH)to double×10^(18)the amount of change magnetic flux in the primary central solenoid(CS)on the QUEST spherical tokamak.Two power supplies are connected with stacks of insulated-gate bipolar transistors,and sequentially operated to generate positive and negative CS currents.This bipolar power-supply system is controlled via a field-programmable gate array,which guarantees the safety of the entire system operation.The new OH system,assisted by electron cyclotron heating,enables the stable generation of plasma currents exceeding 100 k A.Moreover,the achieved electron density over the wide range in the major radial direction exceeds the cut-off density for one of the highpower microwave sources in QUEST.This strategy yields target plasmas for future experiments with the electron Bernstein wave.

Numerical study of plasmas start-up by electron cyclotron waves in NCST spherical tokamak and CN-H1 stellarator

According to the physics of tokamak start-up,this study constructs a zero-dimensional(0D)model applicable to electron cyclotron(EC)wave assisted start-up in NCST spherical torus(spherical tokamak)and CN-H1 stellarators.Using the constructed 0D model,the results obtained in this study under the same conditions are compared and validated against reference results for pure hydrogen plasma start-up in tokamak.The results are in good agreement,especially regarding electron temperature,ion temperature and plasma current.In the presence of finite Ohmic electric field in the spherical tokamak,a study on the EC wave assisted start-up of the NCST plasma at frequency of 28 GHz is conducted.The impact of the vertical magnetic field B_(v)on EC wave assisted start-up,the relationship between EC wave injection power P_(inj),Ohmic electric field E,and initial hydrogen atom density n_(H0)are explored separately.It is found that under conditions of Ohmic electric field lower than ITER(~0.3 V m^(-1)),EC wave can expand the operational space to achieve better plasma parameters.Simulating the process of28 GHz EC wave start-up in the CN-H1 stellarator plasma,the plasma current in the zerodimensional model is replaced with the current in the poloidal coil of the stellarator.Plasma startup can be successfully achieved at injection powers in the hundreds of kilowatts range,resulting in electron densities on the order of 10^(17)-10^(18)m^(-3).

Effect of surface modification on the radiation stability of diamond ohmic contacts

The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.

Physical mechanism of oxygen diffusion in the formation of Ga_(2)O_(3) Ohmic contacts

The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.

Impact of Viscous Dissipation and Ohmic Heating on Natural Convection Heat Transfer in Thermo-Magneto Generated Plume

The present investigation centers on the impact of viscous dissipation and ohmic heating on the plume generated by a line heat source under the impact of an aligned magnetic field.In this study,the flow model is adapted to incorporate ohmic heating and viscous dissipation by including the respective terms in the energy equation.A mathematical model is formulated as a system of coupled partial differential equations to analyze the flow problem.Subsequently,a numerical solution is derived with stream function formulation for the system of coupled partial differential equations,which transmutes it into ordinary differential equations.To achieve this,the numerical properties of the problem are established through the utilization of the Shooting method in tandem with the MATLAB tool bvp4c.The graphical representations of both missing and specified boundary conditions depict the effects of the magnetic parameter,viscous dissipation variable,magnetic force parameter,Prandtl number,and magnetic Prandtl number.These are accompanied by a discussion of their respective physical implications.The observed results claimed that the velocity,current density,and temperature distribution decrease for enhancing magnetic parameters.Meanwhile,the skin friction and magnetic flux drop while the heat transfer rate increases with an increment in magnetic parameters.These fluid flow and heat transfer characteristics were observed to decrease for increasing viscous dissipation.The current work is novel in incorporating ohmic heating viscous dissipation in energy equations coupled with Max-well and magnetic induction equations.

Zn-Cu电池的Joule热电阻与Ohmic电阻的理论研究

当Zn－Cu伏打电池处于缓慢、均匀稳定放电状态时，Joule热电阻RJ不等于Ohmic电阻R.RJ涉及由电流I所带的离子，而R则涉及电解质内所有离子．

Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide

N-wells are created by P＋ ion implantation into Si-faced p-type 4H-SiC epilayer. Ti and Ni are deposited in sequence on the surface of the active regions. Ni2Si is identified as the dominant phase by X-ray diffraction （XRD） analysis after metallization annealing. An amorphous C film at the Ni2 Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer （XEDS）. The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing. Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2 Si and amorphous C film are replaced by new metal films. The sheet resistance Rsh of the implanted layers decreases from 975 to 438f2/D, because carbon vacancies （Vc） appeared during annealing,which act as donors for electrons in SiC.

圆柱形电极Zn-Cu电池中Joule热电阻和Ohmic电阻的理论研究

从理论上对Zn-Cu伏打电池中的Joule热电阻(RJ)和Ohmic电阻(RO)进行了研究.结果表明:当Zn-Cu伏打电池处于缓慢、均匀、稳定放电状态时,RJ>RO.这是因为RJ=Q/I2,RJ涉及电流所带的离子,其大小取决于电能和化学能产生的热,RO=ΔU/I,其值大小只取决于电能.

Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC

An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 x 10^-6Ω·cm^2 was achieved after rapid thermal annealing in N2 for 2min at 950℃. SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms＇ outdiffusion from the SiC to form interstitial compound TiC. This process can create abundant C vacancies near the interface. It is the carbon defect layer that enhances the defect-assisted tunneling. The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.

Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.

A Novel Ideal Ohmic Contact SiGeC/Si Power Diode with Graded Doping Concentration

A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes.

Non-Ohmic谱反常扩散粒子的响应特性:耦合谐振子势情况

研究了具有non-Ohmic谱的反常扩散粒子对谐振子势的响应特性,结果发现对次扩散粒子,系统需要更长的时间达到平衡,而对超扩散粒子,则只要更短的时间就可平衡;特别对超扩散粒子,系统对各种参数值的变化更加敏感,而对次扩散则相对迟钝些.本文提供的分析方法对研究系统在其他外势条件下的响应特性问题将有一定的启发作用.

双轴应变对NbSe_(2)/MoSi_(2)N_(4)肖特基势垒的调控

最近一种高质量的二维(Two-dimensional,2D)半导体材料MoSi_(2)N_(4)(MSN)在实验上被成功合成,具有优异的电气和机械性能.尽管最近有大量的研究致力于揭示MSN的材料特性,但到目前为止,对MSN的电接触物理特性的探索还比较少.在这项工作中,构建了金属-半导体NbSe_(2)/MSN肖特基结并使用第一性原理密度泛函理论计算研究了该肖特基结的材料特性.发现NbSe_(2)/MSN接触具有超低肖特基势垒高度(Schottky barrier height,SBH),这有利于纳米电子学应用.SBH可以通过施加双轴应变的方式进行有效的调控.当施加拉伸应变时能实现NbSe_(2)/MSN肖特基结由p型肖特基接触转变为p型欧姆接触,而当施加较大的压缩应变时能实现p型肖特基接触和n型肖特基接触之间的转换.我们的研究结果为MSN的2D电触点的物理特性提供了见解,并将为设计基于MSN的2D纳米器件的高性能电触点提供关键的一步.

关于球形电极Zn—Cu电池的Ohmic电阻和Joule热电阻的理论研究

当Zn—Cu伏打电池处于缓慢、均匀稳定的放电状态时,Joule热电阻不等于Ohmic电阻R。从能量上来考虑,电池中不仅电能转化成热量,化学能也转化成热量。涉及由电能I所带的离子,而R则涉及电解质中所有离子。

Analysis on the Problems in Start-up and Debugging of Two 600 MW Generating Units in Yangzhou No.2 Thermal Power Plant

The problems including excessive flow of attemperating water for boiler, failure of butterfly valve at the outlet of circulating water pump, burnt-out of thyristor for excitation regulator, load variation rate of CCS not complying with the contract target, etc. occurred during start-up and debugging of two 600 MW generating units in Yangzhou No.2 Thermal Power Plant. Through analysis on these problems. the remedial measures were put forward, to which can be referred for similar units.

Start-up of anaerobic ammonia oxidation bioreactor with nitrifying activated sludge

The anaerobic ammonia oxidation(Anammox) bioreactor was successfully started up with the nitrifying activated sludge. After anaerobically operated for 105 d, the bioreactor reached a good performance with removal percentage of both ammonia and nitrite higher than 95% and volumetric total nitrogen removal as high as 149.55 mmol/(L·d). The soft padding made an important contribution to the high efficiency and stability because it held a large amount of biomass in the bioreactor.

Study on Matching a 300 MVA Motor Generator with an Ohmic Heating Power Supply in HL-2M

A new 300 MVA/1350 MJ motor generator （MG） will be built to feed all of the poloidal field power supplies （PFPS） and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole 6-phase synchronous generator and a coaxial 8500 kW induction motor. The Ohmic heating power supply （OHPS） consisting of 4-quadrant DC pulsed convertor is the one with the highest parameters among the PFPS. Therefore, the match between the generator and the OHPS is very important. The matching study with Matlab/Simulink is described in this paper. The simulation results show that the subtransient reactance of the generator is closely related to the inversion operation of the OHPS. By setting various subtransient reactance in the simulation generator model and considering the cost reduction, the optimized parameters are obtained as xd＂ = 0.405 p.u. at 100 Hz for the generator. The models built in the simulation can be used as an important tool for studying the dynamic characteristics and the control strategy of other HL-2M PFPSes.

Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC

The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- served after 1650℃ annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10^-3Ω · cmA^2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2 X-ray diffraction analysis shows the formation of Ni2 Si and graphite phase at the interface after annealing. This provides the evidence that the car- bon vacancies,resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.

Ohmic Contacts to n-Type Al_(0.6)Ga_(0.4)N for Solar-Blind Detectors

We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

The Ni/4H-SiC Schottky barrier diodes （SBDs） and transfer length method （TLM） test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with i MeV electrons up to a dose of 3.43 × 10^14 e/cm^-2. After radiation, the forward currents of the SBDs at 2 V decreased by about 50%, and the reverse currents at -200 V increased by less than 30%. Schottky barrier height （ФB） of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias, and decreased from 1.25 eV to 1.19 eV under -30 V irradiation bias. The degradation of ФB could be explained by the variation of interface states of Schottky contacts. The on-state resistance （Rs） and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance （ρc） of the Ni/SiC Ohmic contact increased from 5.11× 10^-5Ω· cm^2 to 2.97× 10^-4Ω· cm^2.