Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.

Annealing behaviour of structure and morphology and its effects on the optical gain of Er^3＋/yb^3＋ co-doped Al2O3 planar waveguide amplifier

Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃. By comparison with TEM observation, the annealing behaviours of photoluminescence （PL） emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800℃ might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.

Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model

Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.

Optical Gain Coefficient Measurements for 1-(4’-(Diphenylamino)-[1,1’-biphenyl]-4-yl)ethanone

In this study, the optical gain coefficient due to spontaneous emission for the conjugated compound 1-(4’-(diphenylamino)-[1,1’-biphenyl]-4-yl)ethanone (DBE) in two solvents, Tetrahydrofuran (THF) and Dichloromethane (DCM) was investigated using the variable stripe length method. The solutions were placed in 10 mm cuvettes and pumped optically with N2 laser (337 nm) with pulse duration of 1.2 ns and repetition rate of 10 Hz. A maximum net gain of 12 cm−1 for the compound in THF, and 7 cm−1 for the compound in DCM were recorded at the input energy of 162 μJ. The fluorescence quantum yields (∅f) of the compound were determined at the excitation wavelength of 337 nm using coumarin as a standard. The values of (∅f) for the samples in DCM and THF solvents were found to be 0.68 and 0.61, respectively. The high values of quantum yields suggest the possibility of using this material as an active media for lasing and for LED.

Analysis of gain distribution in cladding-pumped thulium-doped fiber laser and optical feedback inhibition problem in fiber-bulk laser system

The steady-state gain distribution in cladding pumped thulium-doped fiber laser（TDFL） is analytically and numerically solved based on the rate equations including loss coefficients and cross relaxation effect. With the gain curve, a problem, which is named optical feedback inhibition（OFI） and always occurs in tandem TDFL-Ho：YAG laser system, is analyzed quantitatively. The actual characteristics of output spectra and power basically prove the conclusion of theoretical analysis. Then a simple mirror-deflected L-shaped cavity is employed to restrain the external feedback and simplify the structure of fiber-bulk Ho：YAG laser. Finally, 25 W of 2097-nm laser power and 51.2% of optical-to-optical conversion efficiency are obtained, and the beam quality factor is less than 1.43 obtained by knife-edge method.

Noticeable positive Doppler effect on optical bistability in an N-type active Raman gain atomic system

We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion and thus create the bistable behaviour or greatly increase the bistable region, which has been known as the positive Doppler effect on optical bistability. In addition, we find that a positive Doppler effect can change optical bistability from the hybrid dispersion-gain type to a dispersive type.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

ZTE gained the second largest share of the global optical networking market of any company for the second year in a row. ZTE gained 1.8 share points on 2010. In two years, the company moved from world No. 5 to world No. 2 in the global optical network market, and its annual revenues now surpass $1.7 billion.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

22 August 2012 -- ZTE Corporation, a publicly listed global provider of telecommunications equipment and network solutions, announced its interim results for the six months ended 30 June 2012. Based on both HKFRS and PRC ASBE, ZTE recorded revenue of RMB 42.64 billion for the period, an increase of 15.2% year-on-year. Pre-tax profit in the period was RMB 656 million, a decrease of 48.5% year-on-year. Basic earnings per share for the period were RMB 0.07. During the reporting period,

用于1.44μm半导体激光器的GaInAs/InGaAsP量子阱结构的设计

采用有效质量模型下的 4× 4Luttinger Kohn哈密顿量矩阵对GaxIn1 -xAs/In0 .80 Ga0 .2 0 As0 .4 4P0 .56 /InP量子阱结构进行了能带计算 ,求得了该量子阱结构跃迁能量随组份及阱宽的变化关系 ,从而得到了激射波长 1.44 μm时的Ga组份x与阱宽Lw(在 5～ 10nm内取值 )的相互关系 :x=0 .3 2 0 13 +0 .0 60 93Lw-0 .0 0 5 3 4Lw2 +0 .0 0 0 17483Lw3,当阱宽为 5～ 10nm ,因而Ga组份为 0 .5 1～ 0 .5 7时 ,阱材料中产生的张应变量为 :0 .2 9%～ 0 .70 %。最后 ,我们计算了该量子阱结构的能量色散关系和光增益谱 ,从而对x与Lw 组合值进行优化。

应变GaInNAs/GaAs量子阱光增益特性研究

采用近似方法对GaInNAs材料的能带结构进行了分析,并计算了应变GaInNAs/GaAs量子阱能级,在此基础上进一步计算了应变GaInNAs/GaAs量子阱的材料光增益谱。对计算结果的分析表明,应变GaInNAs/GaAs量子阱材料是一种可以应用于1300nm波段的新型长波长半导体光电子材料。

Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide range of temperatures.The device’s optical gain is calculated by using two different band energy models.The first is based on the simple band-to-band model that accounts for carrier transitions between the first levels of the conduction band and valence band,whereas the second assumes the perturbation theory(k.p model)for considering the valence intersubband transitions and the relative absorption losses in the QW.The results reveal that the optical gain increases with increasing the n-type doping density as well as the Al molar fraction of the AlxGa1–xN layers,which originate the GaN compressivestrained QW.In particular,a significant optical gain on the order of 5000 cm^-1 is calculated for a QW width of 40A at room temperature.In addition,the laser threshold current density is of few tens of A/cm^2 at low temperatures.

Gain-assisted indented plasmonic waveguide for low-threshold nanolaser applications

A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.

Spatially Inhomogeneous Gain Modification in Photonic Crystals

The electric and magnetic energy distributions in photonic crystals （PC） are calculated by using the plane wave expansion （PWE） method. Even though the total electric and magnetic energy in each unit cell of photonic crystals are equal to each other, the ratio of electric and magnetic energy densities varies depending on the local position. Based on Fermi＇s golden rule, the optical gain is analysed in the full quantum framework that takes the nonuniform energy density ratio into account. This nonuniform energy density ratio in photonic crystals, defined in an equal form as gain modification factor, leads to spatially inhomogeneous modification of optical gain. Results reported in the paper provide a new perspective for analysing gain characteristics, as well as the lasing properties, in photonic crystals.

OPTICAL SPECTRA OF LOW-DIMENSIONAL SEMICONDUCTORS

We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion.

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.

All-optical XNOR and AND gates simultaneously realized in a single semiconductor optical amplifier with improved dynamics

All-optical XNOR and AND logic gates using four-wave mixing （FWM） and cross-gain modulation （XGM） in a single semiconductor optical amplifier （SOA） with improved dynamics are simultaneously realized. By numerical simulation, the effects of the input optical wave powers and injection current on the critical factors of the logic gate performances, such as the ON-OFF contrast ratio, the power-output level of the logic ＇1＇, and the difference between power outputs of the logic ＇1＇, are investigated in detail. In addition, the effect of the counter-propagating CW pump on the gain recovery is analysed.

Analytic approach to the small-signal frequency response of saturated semiconductor optical amplifiers using multisection model

An analytic solution derived by multisection model to the small-signal frequency response （SSFR） of wavelength conversion based on cross-gain modulation （XGM） in semiconductor optical amplifiers （SOAs） is presented. The result contains details that can affect the characteristics of SSFR significantly more than previous ones.

Image Enhancement in Coherent Optical Amplification by Photorefractive Crystals

In this paper, a model of two-wave mixing in the photorefractive crystal, which takes account of the difference in spatial frequency in a beam, has been built to study the image enhancement effect in coherent optical amplification. Based on the theoretical analysis of the model, the gain distribution for each pixel in the signal beam has been obtained. It shows that the unevenness of the gain is induced by the difference in spatial frequency in the beam. The factors that impact on the uniformity of image enhancement have been analyzed. As an example, the effects of these factors in a given photorefractive crystal have been studied through simulation.

一种全透明宽带高增益离子液体透镜天线

基于5G美化移动基站和军用领域中光学/微波多模复合制导隐身等对天线光学透明和易伪装隐蔽的现实需求,本文设计了一种全透明宽带高增益离子液体天线。天线由离子液体,椭球透镜容器,锥形辐射引向器,以及带有透明导电膜的反射地板组成。首先,利用介质透镜上对频率的无选择性使得天线获得宽带特性。其次,通过使用低损耗离子液体和椭球透镜结构,使得液体介质透镜产生一个同相射线场,从而可以产生极强的方向性。最后,在液体介质周围加载一个锥形辐射引向器,使得辐射波束进一步集中,从而提高增益。此外,通过在天线的背面加载透明导电膜反射地板,进一步降低了后瓣,并且使整个天线呈现了光学全透明的效果。仿真和实验表明,天线工作在9.9 GHz~18 GHz(S11≤-10 dB)频带范围,最大实测增益可达12.1 dBi。天线在雷达探测、5G基站、电子对抗以及透明电子产品等领域中具有广泛的应用前景。