Dependence of Structural and Optoelectrical Properties on the Composition of Electron Beam Evaporated Zn_xCd_(1-x)S Thin Films

Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.

Substrate Evolution to Microstructural and Optoelectrical Properties of Evaporated CdS Thin Films Correlated with Elemental Composition

A typical high-e fficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss. In the present work, the physical properties of CdS thin films are investigated where films with 100 nm thickness were fabricated on the different types of substrates viz. soda–lime glass, indium-doped tin oxide(ITO)-and fl uorine-doped tin oxide(FTO)-coated glass substrates, and silicon wafer using electron beam evaporation. The X-ray diffraction patterns confirmed that deposited thin films showed cubic phase and had(111) as predominant orientation where the structural parameters were observed to be varied with nature of substrates. The ohmic behaviour of the CdS films was disclosed by current–voltage characteristics, whereas the scanning electron microscopy micrograph revealed the uniform deposition of the CdS films with the presence of round-shaped grains. The elemental analysis confirmed the CdS films deposition where the Cd/S weight percentage ratio was changed with nature of substrates. The direct energy band gap was observed in the 1.63–2.50 eV range for the films grown on different substrates. The investigated properties of thin CdS layers demonstrated that the selection of substrate(in terms of nature) during device fabrication plays a crucial role.

Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties

Transition metal dichalcogenides(TMDCs)have suitable and adjustable band gaps,high carrier mobility and yield.Layered TMDCs have attracted great attention due to the structure diversity,stable existence in normal temperature environment and the band gap corresponding to wavelength between infrared and visible region.The ultra-thin,flat,almost defect-free surface,excellent mechanical flexibility and chemical stability provide convenient conditions for the construction of different types of TMDCs heterojunctions.The optoelectric properties of heterojunctions based on TMDCs materials are summarized in this review.Special electronic band structures of TMDCs heterojunctions lead to excellent optoelectric properties.The emitter,p-n diodes,photodetectors and photosensitive devices based on TMDCs heterojunction materials show excellent performance.These devices provide a prototype for the design and development of future high-performance optoelectric devices.

Structure and optoelectrical properties of transparent conductive MGZO films deposited by magnetron sputtering

The transparent conductive Mg-Ga co-doped Zn O(MGZO) films were prepared by radio-frequency(RF) magnetron sputtering. The influence of substrate temperature on the structural and optoelectrical properties of the films is studied. The results show that all the films possess a preferential orientation along the(002) plane. With the increase of substrate temperature, the structure and optoelectrical properties of the films can be changed. When substrate temperature is 300 ℃, the deposited film exhibits the best crystalline quality and optoelectrical properties, with the minimum micro strain of 1.09×10^(-3), the highest average visible transmittance of 82.42%, the lowest resistivity of 1.62×10^(-3) Ω·cm and the highest figure of merit of 3.18×10~3 Ω^(-1)·cm^(-1). The optical bandgaps of the films are observed to be in the range of 3.342—3.545 eV. The refractive index dispersion curves obey the Sellmeier's dispersion model.

Regulation of morphology and visible light-driven photocatalysis of WO_(3)nanostructures by changing pH

The controlled preparation of hexagonal tungsten trioxide(h-WO_(3))nanostructures was achieved by adjusting the pH of the precursor solution.The effect of the pH on the morphology,elemental composition,and photocatalytic performance of the samples was characterized via X-ray diffraction(XRD),scanning electron microscopy,energy dispersive X-ray spectroscopy,and Raman spectroscopy.Ultraviolet-visible(UV-Vis)spectra were used to evaluate the absorbance and the photocatalytic performance of methylene blue.Photoluminescence(PL),electrochemical impedance spectroscopy,photocurrent response and Brunauer-Emmett-Teller(BET)were used to study the optical properties,electrical performance,and specific surface area of the WO_(3)-nanostructures,respectively.The results indicate that the WO_(3) nanorods prepared at pH=1.0 exhibit the highest photocatalytic performance(87.4%in 1 h),whereas the WO_(3) nanoblocks prepared at p H=3.0 show the lowest.The photocatalytic performance of the one dimensional(1 D)-nanorods can be attributed to their high specific surface area and charge transfer ability.The h-WO_(3) nanostructures were synthesized via a simple method and without a capping agent.They show an excellent photocatalytic performance,which is promising for their application in environment purification.