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Growth and Characterization of Doped CeO_2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method
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作者 王耀 卢亚锋 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第3期471-476,共6页
CeO2 and Ce0.8M0.2O2-d films (M = Mn, Y, Gd, Sm, Nd and La) with (00l) preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition (MOD) method. The factors infl... CeO2 and Ce0.8M0.2O2-d films (M = Mn, Y, Gd, Sm, Nd and La) with (00l) preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition (MOD) method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction (XRD), scanning electron microscopy (SEM) analysis, atomic force microscopy (AFM) and differential scanning calorimetry (DSC). The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2-d (M = Y, Gd, Sm, Nd and La) films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors. 展开更多
关键词 coated conductors buffer layer metal organic deposition
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Nucleation and epitaxy growth of high-entropy REBa_(2)Cu_(3)O_(7-δ)(RE=Y,Dy,Gd,Sm,Eu)thin films by metal organic deposition 被引量:3
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作者 Jing Chen Rongtie Huang +5 位作者 Xinghang Zhou Difan Zhou Minjuan Li Chuanyi Bai Zhiyong Liu Chuanbing Cai 《Journal of Rare Earths》 SCIE EI CAS CSCD 2023年第7期1091-1098,I0004,共9页
High-entropy REBa_(2)Cu_(3)O_(7-δ)(RE=Y_(0.7)+Dy_(0.2)+Gd_(0.2)+Sm_(0.2)+Eu_(0.2))(HE-REBCO) superconducting films doped with multiple rare earth elements were successfully fabricated with thickness up to 800 nm by a... High-entropy REBa_(2)Cu_(3)O_(7-δ)(RE=Y_(0.7)+Dy_(0.2)+Gd_(0.2)+Sm_(0.2)+Eu_(0.2))(HE-REBCO) superconducting films doped with multiple rare earth elements were successfully fabricated with thickness up to 800 nm by a trifluoroacetate-metal organic deposition(TFA-MOD).The enhanced entropy change ΔS of the HEREBCO system promotes the c-axis growth of REBCO thin film in the competition with a/b-axis growth.The microstructure and element distribution were investigated by the transmission electron microscopy(TEM) and energy dispersive spectroscopy(EDS).The results show that HE-REBCO films have a great amount of stacking defects,lattice distortions and various rare earth oxides.Furthermore,the microstrain of HE-REBCO films increases significantly compared to the undoped YBCO and(Y,Dy)BCO films.Finally,the superco nducting critical temperature(T_c^(onset)) of HE-REBCO films is about 93 K,and the in-field properties are significantly improved,especially at the temperature of about 77 K.The maximum pinning force density(F_(p,max)) of the HE-REBCO samples at 77 K is 1.7 times higher than that of the undoped YBCO films. 展开更多
关键词 High-entropy superconductor REBa_(2)Cu_(3)O_(7-δ) Rare earths Trifluoroacetate-metal organic deposition Enhanced entropy change
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In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system 被引量:1
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作者 杨亿斌 柳铭岗 +12 位作者 陈伟杰 韩小标 陈杰 林秀其 林佳利 罗慧 廖强 臧文杰 陈崟松 邱运灵 吴志盛 刘扬 张佰君 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期362-366,共5页
In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The r... In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses(tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method. 展开更多
关键词 stresses metal organic chemical vapor deposition wafer bowing in-situ reflectivity mapping
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition 被引量:1
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作者 黎明 王勇 +1 位作者 王凯明 刘纪美 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第3期597-601,共5页
High-performance low-leakage-current A1GaN/GaN high electron mobility transistors (HEMTs) on silicon (111) sub- strates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium ... High-performance low-leakage-current A1GaN/GaN high electron mobility transistors (HEMTs) on silicon (111) sub- strates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated. 展开更多
关键词 AlGaN/GaN HEMTs low-leakage current metal organic chemical vapor deposition Mg-dopedbuffer layer
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1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition 被引量:1
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作者 高成 李海鸥 +1 位作者 黄姣英 刁胜龙 《Journal of Central South University》 SCIE EI CAS 2012年第12期3444-3448,共5页
InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-D... InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency (fT) and the maximum oscillation frequency (fmax) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD. 展开更多
关键词 metamorphic device mental organic chemical vapor deposition high electron mobility transistors InP substrate INGAAS
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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition 被引量:1
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作者 任鹏 韩刚 +6 位作者 付丙磊 薛斌 张宁 刘喆 赵丽霞 王军喜 李晋闽 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期145-149,共5页
CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposit... CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2:N2 ratio is 1:1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature. 展开更多
关键词 of or IS as RATE GAN Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal organic Chemical Vapor deposition by with
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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition
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作者 吉泽生 汪连山 +5 位作者 赵桂娟 孟钰淋 李方政 李辉杰 杨少延 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第7期420-425,共6页
We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The sources of trimethylaluminium(TMAl) and ammonia were pulse introduced into the re... We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The sources of trimethylaluminium(TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction(HRXRD) measurement showed that the full width at half maximum(FWHM) of the(0002) and(10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square(RMS) roughness was lower to 0.2 nm as tested by atomic force microscope(AFM). The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress. 展开更多
关键词 pulsed metal organic chemical vapor deposition growth mode MORPHOLOGY crystalline quality
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Are typhoon and marine eutrophication the possible missing sources of high dissolved organic nitrogen in wet deposition?
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作者 CHANG Ming CHEN Weihua +2 位作者 DENG Sixin WANG Xuemei ZHOU Shengzhen 《Atmospheric and Oceanic Science Letters》 CSCD 2020年第3期182-187,共6页
The aim of this study is to elaborate a possible missing source of high-throughput organic nitrogen in rainfall.The authors classified the observed flux data of dissolved organic nitrogen in terms of the attributes of... The aim of this study is to elaborate a possible missing source of high-throughput organic nitrogen in rainfall.The authors classified the observed flux data of dissolved organic nitrogen in terms of the attributes of the wet deposition event itself,such as the season,precipitation,air mass backward trajectory,and effect of typhoons.The monitoring results of the ocean eutrophication and the chlorophyll-a map of the surface water were compared with the trajectory of the high-flux deposition events.The results show that approximately one third of the total wet deposition organic nitrogen derived from a confluence of three factors:rain in the wet season,air masses from the ocean,and rainfall over 50 mm.It could be seen that the co-occurrence of intense events such as a typhoon and eutrophic surface sea waters might be an important source of dissolved organic nitrogen in wet deposition. 展开更多
关键词 organic nitrogen deposition marine eutrophication TYPHOON
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Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer
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作者 许晟瑞 赵颖 +3 位作者 姜腾 张进成 李培咸 郝跃 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期150-152,共3页
The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r... The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults (BSFs) and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar (1122) GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of (1122) semipolar GaN. 展开更多
关键词 GaN Quality Grown on m-Plane Sapphire Substrates by Metal organic Chemical Vapor deposition Using Self-Organized SiN_x Interlaye in of is by Improved Semipolar on
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GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency
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作者 张杨 王青 +5 位作者 张小宾 刘振奇 陈丙振 黄珊珊 彭娜 王智勇 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第10期167-171,共5页
We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge (1.88 eVil .42 eVil .05 eV/0.67eV) four-junction (4J) solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the... We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge (1.88 eVil .42 eVil .05 eV/0.67eV) four-junction (4J) solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum. 展开更多
关键词 by on it of GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal organic Chemical Vapor deposition with High Efficiency is THAN Ge GaAs with cell that
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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition
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作者 全汝岱 张进成 +3 位作者 张雅超 张苇航 任泽阳 郝跃 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第10期145-148,共4页
Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostruct... Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively. 展开更多
关键词 GAN IS in of Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal organic Chemical Vapor deposition by on
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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
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作者 张雅超 周小伟 +6 位作者 许晟瑞 陈大正 王之哲 汪星 张金风 张进成 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第1期796-801,共6页
Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy... Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. 展开更多
关键词 HETEROSTRUCTURE InGaN channel pulsed metal organic chemical vapor deposition
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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition
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作者 王连锴 刘仁俊 +4 位作者 吕游 杨皓宇 李国兴 张源涛 张宝林 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第1期114-118,共5页
Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and mic... Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum(358 arc sec) of the(004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices. 展开更多
关键词 crystal growth metal–organic chemical vapor deposition thin films
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Organic carbon deposition flux on the North Chukchi Sea shelf based on ^(210)Pb radioactivity dating
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作者 LI Yiliang YU Wen +1 位作者 HE Jianhua SU Jian 《Advances in Polar Science》 2012年第4期231-236,共6页
Deposition of organic carbon forms the final net effect of the ocean carbon sink at a certain time scale. Organic carbon deposition on the Arctic shelves plays a particularly important role in the global carbon cycle ... Deposition of organic carbon forms the final net effect of the ocean carbon sink at a certain time scale. Organic carbon deposition on the Arctic shelves plays a particularly important role in the global carbon cycle because of the broad shelf area and rich nutrient concentration. To determine the organic carbon deposition flux at the northern margin of the Chukchi Sea shelf, the 210pb dating method was used to analyze the age and deposition rate of sediment samples from station R17 of the third Chinese National Arctic Research Expedition. The results showed that the deposition rate was 0.6 mm'aI, the apparent deposition mass flux was 0.72 kg.m2a1, and the organic carbon deposition flux was 517 mmol C.m2.al. It was estimated that at least 16% of the export organic carbon flux out of the euphoric zone was transferred and chronically buried into the sediment, a value which was much higher than the average ratio (-10%) for low- to mid-latitude regions, indicating a highly effective carbon sink at the northern mar- gin of the Chukchi Sea shelf. With the decrease of sea ice coverage caused by warming in the Arctic Ocean, it could be inferred that the Arctic shelves will play an increasingly important role in the global carbon cycle. 展开更多
关键词 organic carbon deposition 210pb dating Chukchi Sea shelf
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Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO_2 and mica substrates
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作者 郇庆 胡昊 +3 位作者 潘理达 肖江 杜世萱 高鸿钧 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第8期270-275,共6页
Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule ... Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction. Finally, a phenomenal "two-branch" model is proposed to simulate the growth process of the seahorse pattern. 展开更多
关键词 TETRACYANOQUINODIMETHANE organic molecule deposition seahorse-like patterns
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Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate
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作者 C.U. Mordi M.A. Eleruja +6 位作者 B.A. Taleatu G.O. Egharevba A.V. Adedeji O.O. Akinwunmi B. Olofinjana C. Jeynes E.O.B. Ajayi 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2009年第1期85-89,共5页
The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis ... The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide. 展开更多
关键词 PRECURSOR Thin film Oxide Metal organic chemical vapour deposition (MOCVD) Rutherford backscattering spectroscopy (RBS)
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Quantum cascade lasers grown by MOCVD
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作者 Yongqiang Sun Guangzhou Cui +10 位作者 Kai Guo Jinchuan Zhang Ning Zhuo Lijun Wang Shuman Liu Zhiwei Jia Teng Fei Kun Li Junqi Liu Fengqi Liu Shenqiang Zhai 《Journal of Semiconductors》 EI CAS CSCD 2023年第12期47-63,共17页
Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,... Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed. 展开更多
关键词 quantum cascade lasers continuous wave high optical power metal organic chemical vapor deposition broad gain
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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
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作者 郭静姝 祝杰杰 +9 位作者 刘思雨 刘捷龙 徐佳豪 陈伟伟 周雨威 赵旭 宓珉瀚 杨眉 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第3期467-471,共5页
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting ... This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization. 展开更多
关键词 InAlN/GaN low-resistance ohmic contacts metal–organic chemical vapor deposition(MOCVD) n^(+)-InGaN time of flight secondary ion mass spectrometry(TOF-SIMS)
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Strongly enhanced flux pinning in the YBa_2Cu_3O_(7-X) films with the co-doping of Ba TiO_3 nanorod and Y_2O_3 nanoparticles at 65 K 被引量:1
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作者 王洪艳 丁发柱 +1 位作者 古宏伟 张腾 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期497-501,共5页
YBa2Cu3O7-x(YBCO) films with co-doping BaTiO3(BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates(TFA-MOD). The properties of the BTO/Y2O3co-doped YBCO films with diffe... YBa2Cu3O7-x(YBCO) films with co-doping BaTiO3(BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates(TFA-MOD). The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction(XRD), Raman spectra, and scanning electron microscope(SEM). The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2(self-field, 65 K) by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density(JC) not only at the self-magnetic field, but also in the applied magnetic field. 展开更多
关键词 YBa2Cu3O7-x(YBCO) film flux pinning BaTiO3(BTO) and Y2O3 nanostructures metal organic deposition using trifluoroacetates(TFA-MOD
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Analysis and design of resistance-wire heater in MOCVD reactor 被引量:1
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作者 曲毓萱 王斌 +5 位作者 胡仕刚 吴笑峰 李志明 唐志军 李劲 胡莹璐 《Journal of Central South University》 SCIE EI CAS 2014年第9期3518-3524,共7页
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati... Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position. 展开更多
关键词 metal organic chemical vapor deposition (MOCVD) reactor design thermal analysis filament heating
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