Impedance Studies of La_2Mo_(2-x)Sn_xO(9-δ) Oxide Ion Conductors

A series of compounds La2Mo2-xSnxO9-6 （x=0-0.3） have been synthesized by solid-state reaction technique. Materials have been characterized by XRD, SEM, DSC and impedance study. In the temperature regime 520℃-590 ℃, the specimens with x〈0.05 have the conductivity higher than La2Mo2O9. Conductivity of Sn-doped compound decreases consistently with increasing Sn-doping, compared to the undoped compound both below and above phase transition, barring the specimens with x〈 0.05, where conductivity values remains almost same as that of undoped specimen in high temperature region. In the intermediate temperature regime （520℃-590℃）, the conductivity of doped compounds increases for x〈0.05 as compared to parent compound. Also, there is no indication of phase stabilization with Sn-doping in this compound even with the highest doping level, x=0.3. Electric modulus analysis suggests that thermally activated oxygen ion hopping mechanism is responsible for the conduction in Sn-doped compound.

Synthesis and Characterization of Fine Grained High Density La_2Mo_2O_9-based Oxide-ion Conductors

A cost-efFective technique, including nanocrystalline powder preparation using a modified Pechini method and a two-step low-temperature sintering route, was developed for the synthesis of high performance La2Mo2O9- based oxide-ion conductors. The optimum parameters of the compaction pressure, the first step and ＇the second step sintering temperatures for the synthesis of fine grained, high density and uniform La2Mo2O9- based oxide-ion conductors were determined by a series of sintering experiments. High density and uniform sintered La2Mo2O9 samples with average grain size from 0.8 to 5 μm and La1.96K0.04Mo2O8.96 sample with average grain size as small as 500 nm were synthesized by using this cost-efFective method. The impedance measurement results show that the as-fabricated La2Mo2O9-based ceramics possess much higher ionic conductivity than that obtained by solid state reaction method. It is found that in the range of 0.8-5μm the grain size of dense La2Mo2O9 samples prepared from the nanocrystalline powders has little influence on their conductivities.

A New Oxide Ion Conductor： La3GaMo2O12

A new oxide ion conductor, La3GaMo2O12, with a bulk conductivity of 2.7× 10^- 2 S·cm ^-1 at 800 ℃ in air atmosphere was prepared by the traditional solid-state reaction. The room temperature X-ray diffraction data could be indexed on a monoclinic cell with lattice parameters of a=0.5602（2） nm, b=0.3224（1） nm, c= 1.5741（1） nm, β= 102.555（0）°, V=0.2775（2） nm^3 and space group Pc（7）. Ac impedance measurements in various atmospheres further support that it is an oxide ion conductor. This material was stable in various atmospheres with oxygen partial pressure p（O2） ranging from 1.0× 10^5 to 1.0× 10^-7 Pa at 800 ℃. A reversible polymorphic phase transition occurred at elevated temperatures as confirmed by the differential thermal analysis and dilatometric measurement.

Electrical properties of La_2Mo_(1.98)Nb_(0.02)O_(8.99) oxide ionic conductors prepared by tape casting

LaMoNbOthick films have been successfully prepared by using a tape casting technique. Partial stabilization of the high temperature cubic phase is revealed in Nb doped LaMoO(LMO) films. The sintering temperature is decreased to 925 ℃ as compared with that of 1150 ℃ in bulk ceramics. The grain exhibits an oxide ionic conductivity of 0.014 S cmat 603 ℃ for LaMoNbO, which is 39% higher than pure LMO. Additionally, the Nb doped LMO films present low grain boundary resistance showing the potential application as solid electrolytes.

Structure and Dielectric Study of Ce_3NbO_(7+δ)

The structure, phase composition, and migration of oxygen ion in Ce3 NbO7＋δ were reported on the basis of lone-pair substitution concept. X-ray diffraction study revealed that Ce3 NbO7＋δ sample was comprised of Ce3 NbO7＋δ phase and CeNbO4.25 phase. In the dielectric study of Ce3 NbO7＋δ sample, two dielectric loss peaks were observed both in temperature spectra and frequency spectra. Both peaks were shifted towards higher temperature with increase in frequency in temperature spectra and towards higher frequency with increase in temperature in frequency spectra, indicating the relaxation essence of these two peaks. It was suggested that the short distance diffusions of oxygen ions in both Ce3 NbO7＋δ phase and CeNbO4.25 phase gave rise to the two dielectric relaxation peaks.

Oxygen vacancy migration and its lattice structural origin in A-site non-stoichiometric bismuth sodium titanate perovskites

Off-stoichiometry of perovskite structural Bi0.5Na0.5TiO3(BNT)ferroelectrics can give rise to considerable oxide-ion conductivity.The inherent structural characteristics are urgent to be resolved due to its particular sensitivity of the conduction mechanism to the nominal composition and synthesis process.Herein,a thorough study of the temperature-dependent neutron,X-ray diffraction and Raman spectrum is carried out on a series of equivalently substituted A-site deficient non-stoichiometric and pristine BNT.Phase transition and defect association are systemically investigated in these dominated rhombohedral phases at room temperature,associated with well saturated ferroelectric states.Significant structural evolution identified by Rietveld refinements and the origin of the electrical performance are clarified at elevated temperatures,focusing on the subtle distortions of ionic displacements,oxygen octahedral tilts and local chemical environments for oxygen vacancies.The ion migration ability mediated by oxygen vacancies that are not energetically favorable in BNT mainly depends on the external substitutional disorder,and is strongly affected by the dopant concentration.Together with the lone pair substitution concept,superior oxide ionic conductivity is achieved,and an alternative strategy is provided in designing BNT based oxide ion conductors.