Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.

Improvement on electrochemical performances of nanoporous titania as anode of lithium-ion batteries through annealing of pure titanium foils

The effect of annealing of Ti foils before anodization on the morphology and electrochemical performance of resultant nanoporous anatase TiO2 （np-TiO2） as anode in rechargeable lithium-ion batteries （LIBs） was investigated. The np-TiO2 anode fabricated from annealed Ti foils exhibited higher specific surface area and reduced pore diameter compared to np-TiO2 electrode fabricated from as-received Ti foils. The highly porous np-TiO2 anode fabricated from annealed Ti foils exhibited 1st discharge capacity of 453.25 mAh/g and reduced to 172.70 mAh/g at 1 C current rate after 300 cycles; whilst the np-TiO2 electrode fabricated from the as-received Ti foils exhibited 1st discharge capacity of 213.30 mAh/g and reduced to 160.0 mAh/g at 1 C current rate after 300cycles. Even after 400cycles, such np-TiO2 electrode exhibited a reversible capacity of 125.0 mAh/g at 2.5 C current rate. Compared to the untreated Ti foils, the enhanced electro- chemical performance of np-TiO2 anode fabricated from annealed Ti foils was ascribed to the annealing- induced removal of residual stress among the Ti atoms. The benefit of annealing process can reduce pore size of as-fabricated np-TiO2.

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250 ℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the （1120） and （1100） faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the （0001） face under the same NO annealing condition. In addition, it is found that Fowler-Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole-Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

A comparative study of two kinds of oxidants（H2O and O3） with the combinations of two metal precursors [trimethylaluminum（TMA） and tetrakis（ethylmethylamino） hafnium（TEMAH）] for atomic layer deposition（ALD） hafnium aluminum oxide（HfAlOx） films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.