Surface modification of silicone rubber by CF4 radio frequency capacitively coupled plasma for improvement of flashover

The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled plasma(CCP)for the improvement of surface insulation performance.The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer.Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples,while the surface charge dissipation,charge accumulation measurement,and flashover test are applied for the surface electrical characteristics.Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment.Besides,the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples.Furthermore,the surface flashover voltage can be increased by 26.67%after 10 min of treatment.It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps,which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR.

Improvement of surface hydrophobicity on silicone rubber modified by CF_4 radio frequency capacitively coupled plasma

In order to improve the surface hydrophobicity, silicone rubber （SIR） samples were exposed to CF4 radio frequency （RF） capacitively coupled plasma （CCP）. Attenuated total reflection Fourier transform infrared （ATR-FTIR） spectrum and X-ray photoelectron spectroscopy （XPS） were used to observe the variation of the functional groups of the modified SIR. Static contact angle （SCA） was employed to estimate the change of hydrophobicity of the modified SIR. The surface energy of SIR is reduced largely from 27.37 mJ/m^2 of original SIR sample to 2.94 mJ/m^2 of SIR sample treated by CF4 CCP modification at RF power of 200 W for a treatment time of 5 rnin. According to the XPS, ATR-FTIR and surface energy analysis, it is suggested that the improvement of hydrophobicity on the modified SIR surface is mainly ascribed to the decrease of surface energy, which is caused by the cooperation of the fluosilicic structure of Si--F or Si--F2 and the fluoric groups of C--CFn induced by the methyl replacement reaction and residual methyl groups of SIR surface.

Power transfer efficiency in an air-breathing radio frequency ion thruster

Due to a series of challenges such as low-orbit maintenance of satellites, the air-breathing electric propulsion has got widespread attention. Commonly, the radio frequency ion thruster is favored by low-orbit missions due to its high specific impulse and efficiency. In this paper, the power transfer efficiency of the radio frequency ion thruster with different gas compositions is studied experimentally, which is obtained by measuring the radio frequency power and current of the antenna coil with and without discharge operation. The results show that increasing the turns of antenna coils can effectively improve the radio frequency power transfer efficiency, which is due to the improvement of Q factor. In pure N_2 discharge,with the increase of radio frequency power, the radio frequency power transfer efficiency first rises rapidly and then exhibits a less steep increasing trend. The radio frequency power transfer efficiency increases with the increase of gas pressure at relatively high power, while declines rapidly at relatively low power. In N_(2)/O_(2) discharge, increasing the N_(2) content at high power can improve the radio frequency power transfer efficiency, but the opposite was observed at low power. In order to give a better understanding of these trends, an analytic solution in limit cases is utilized, and a Langmuir probe was employed to measure the electron density. It is found that the evolution of radio frequency power transfer efficiency can be well explained by the variation of plasma resistance, which is related to the electron density and the effective electron collision frequency.

Characteristics of dual-frequency capacitively coupled SF_6/O_2 plasma and plasma texturing of multi-crystalline silicon

Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon （mc-Si） surface texturing. In this paper, capacitively coupled plasma （CCP） driven by a dual frequency （DF） of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency （RF） input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3 x 109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom （[F]/[O]） in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109 cm-3.

Frequency Matching Effects on Characteristics of Bulk Plasmas and Sheaths for Dual-Frequency Capacitively Coupled Argon Discharges: One-Dimensional Fluid Simulation

A one-dimensional fluid model is proposed to simulate the dual-frequency capacitively coupled plasma for Ar discharges. The influences of the low frequency on the plasma density, electron temperature, sheath voltage drop, and ion energy distribution at the powered electrode are investigated. The decoupling effect of the two radio-frequency sources on the plasma parameters, especially in the sheath region, is discussed in detail.

Plasma Uniformity in a Dual Frequency Capacitively Coupled Plasma Reactor Measured by Optical Emission Spectroscopy

Local measurement of plasma radial uniformity was performed in a dual frequency capacitively coupled argon plasma （DF-CCP） reactor using an optical probe. The optical probe collects the light emission from a small separate volume in plasma, thus enabling to diagnose the plasma uniformity for different experimental parameters. Both the gas pressure and the low- frequency （LF） power have apparent effects on the radial uniformity of argon plasma. With the increase in either pressure or LF power, the emission profiles changed from a bell-shaped to a double-peak distribution. The influence of a fused-silica ring around the electrodes on the plasma uniformity was also studied using the optical probe. Possible reasons that result in nonuniform plasmas in our experiments are discussed.

Methane conversion in the presence of oxygen under low-temperature radio frequency plasma

Methane conversion in the presence of oxygen under low-temperature radio frequency （RF） plasma was investigated.The experiment results indicated that the following four factors,i.e.,discharge voltage,discharge area,O2/CH4 molar ratio and total gas flowrate,affected remarkably the reaction performance.The optimum reaction conditions of methane conversion in the presence of O2 under RF plasma are as follows：discharge voltage 1050 V,discharge area 989.1mm 2,O2/CH4 molar ratio 1/10 and total gas flowrate 200 ml/min.A methane conversion of 91% could be reached under the optimum conditions.Oxygen is good for the breaking of C-H bonds and also acts as a sort of thinner.According to the low-temperature plasma characteristics,the macroscopic kinetics model of methane conversion in the presence of O2 under radio frequency plasma was studied.

Discharge characteristic of very high frequency capacitively coupled argon plasma

The discharge characteristics of capacitively coupled argon plasmas driven by very high frequency discharge are studied.The mean electron temperature and electron density are calculated by using the Ar spectral lines at different values of power(20 W-70 W)and four different frequencies(13.56 MHz,40.68 MHz,94.92 MHz,and 100 MHz).The mean electron temperature decreases with the increase of power at a fixed frequency.The mean electron temperature varies non-linearly with frequency increasing at constant power.At 40.68 MHz,the mean electron temperature is the largest.The electron density increases with the increase of power at a fixed frequency.In the cases of driving frequencies of 94.92 MHz and 100 MHz,the obtained electron temperatures are almost the same,so are the electron densities.Particle-in-cell/Monte-Carlo collision(PIC/MCC)method developed within the Vsim 8.0 simulation package is used to simulate the electron density,the potential distribution,and the electron energy probability function(EEPF)under the experimental condition.The sheath width increases with the power increasing.The EEPF of 13.56 MHz and 40.68 MHz are both bi-Maxwellian with a large population of low-energy electrons.The EEPF of 94.92 MHz and 100 MHz are almost the same and both are nearly Maxwellian.

Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma

Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.

Investigation of Capacitively Coupled Argon Plasma Driven by Dual-Frequency with Different Frequency Configurations

Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.

Analytical Determination of Collisionless Sheath Properties for Triple Frequency Capacitively Coupled Plasma

A triple frequency capacitively coupled plasma （TF-CCP） has been considered to investigate the behavior of the sheath parameters. A self-consistent time-independent collisionless model has been developed. The sheath width and potential are calculated using the present model and compared with those calculated using a single-frequency （SF）, a dual-frequency （DF） and a triple-frequency （TF） model for time independent collisionless cases. The sheath motion and sheath potential are found to be larger compared with those of SF and DF CCPs for an inhomogeneous sheath, and that of TF CCP for a homogeneous sheath. The effects of the source parameters, i.e., current magnitudes, frequencies and phase difference, on the sheath parameters are investigated. The sheath parameters show higher values at higher source currents whereas they decrease with the increase of excitation frequencies. It has also been found that, by the proper choice of source frequencies and phase differences, it is possible to adjust the energy of ions when they hit the electrode.

Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.

Influence of Discharge Parameters on Tuned Substrate Self-Bias in an Radio-Frequency Inductively Coupled Plasma

The tuned substrate self-bias in an rf inductively coupled plasma source is controlled by means of varying the impedance of an external LC network inserted between the substrate and the ground. The influencing parameters such as the substrate axial position, different coupling coils and inserted resistance are experimentally studied. To get a better understanding of the experimental results, the axial distributions of the plasma density, electron temperature and plasma potential are measured with an rf compensated Langmuir probe; the coil rf peak-to-peak voltage is measured with a high voltage probe. As in the case of changing discharge power, it is found that continuity, instability and bi-stability of the tuned substrate bias can be obtained by means of changing the substrate axial position in the plasma source or the inserted resistance. Additionally, continuity can not transit directly into bi-stability, but evolves via instability. The inductance of the coupling coil has a substantial effect on the magnitude and the property of the tuned substrate bias.

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

The inflexion point of electron density and effective electron temperature curves versus radio-frequency （RF） bias voltage is observed in the H mode of inductively coupled plasmas （ICPs）. The electron energy probability function （EEPF） evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is： bias- induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.

Abnormal Enhancement of N_2^+ Emission Induced by Lower Frequency in N_2 Dual-Frequency Capacitively Coupled Plasmas

Nitrogen dual-frequency capacitively coupled plasmas （DF-CCPs） with different fre- quency configurations, i.e., 60/2 MHz and 60/13.56 MHz, are investigated by means of opticM emission spectroscopy （OES） and a floating double probe. The excited nitrogen molecule ion N＋（B） is monitored by measuring the emission intensity of the （0,0） bandhead of the first neg- ative system （FNS） at 391.44 nm. It is shown that in the discharge with 60/13.56 MHz, the N＋ emission intensity decreases with the increase in pressure. In the discharge with 60/2 MHz, however, an abnormal enhancement of N＋ emission at higher pressure is observed when a higher power of 2 MHz is added. Variation in the ion density shows a similar dependence on the gas pressure. This indicates that in the discharge with 60/2 MHz there is a mode transition from the alpha to gamma type when a higher power of 2 MHz is added at high pressures. Combining the measurements using OES and double probe, the influence of low frequency on the discharge is investigated and the excitation route of the N＋（B） state in the discharge of 60/2 MHz is also discussed.

Modeling of the nanoparticle coagulation in pulsed radio-frequency capacitively coupled C_2H_2 discharges

The role of pulse parameters on nanoparticle property is investigated self-consistently based on a couple of fluid model and aerosol dynamics model in a capacitively coupled parallel-plate acetylene（C2H2） discharge. In this model, the mass continuity equation, momentum balance equation, and energy balance equation for neutral gas are taken into account.Thus, the thermophoretic force arises when a gas temperature gradient exists. The typical results of this model are positive and negative ion densities, electron impact collisions rates, nanoparticle density, and charge distributions. The simulation is performed for duty ratio 0.4/0.7/1.0, as well as pulse modulation frequency from 40 kHz to 2.7 MHz for pure C2H2 discharges at a pressure of 500 mTorr. We find that the pulse parameters, especially the duty ratio, have a great affect on the dissociative attachment coefficient and the negative density. More importantly, by decreasing the duty ratio, nanoparticles start to diffuse to the wall. Under the action of gas flow, nanoparticle density peak is created in front of the pulse electrode,where the gas temperature is smaller.

Determination of Plasma Parameters in a Dual-Frequency Capacitively Coupled CF_4 Plasma Using Optical Emission Spectroscopy

Optical emission spectroscopy measurements of dual-frequency capacitively coupled CF4 plasmas were carried out. The gas temperature （Tg） was acquired by fitting the optical emission spectra of a CF B-X system in 201～206 nm. The atomic fluorine concentration and the electron temperature （Te） were obtained by trace rare gas optical emission spectroscopy and a modified Boltzmann plot technique, respectively. It was found that the gas temperature was about 620±30 K at 50 mTorr and the atomic fluorine concentration increased while the electron temperature decreased with increasing gas pressure and power of high frequency （60 MHz）. With increasing low frequency （2 MHz） power, the electron temperature also increased, but the atomic fluorine concentration was insensitive to this change. The generation and disappearance mecha- nisms of F atoms are discussed.

Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure

A one-dimensional（1D） fluid model on capacitively coupled radio frequency（RF） argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on electron heating. The model is solved numerically by a finite difference method. The numerical results show that the discharge process may be divided into three stages： the growing rapidly stage, the growing slowly stage, and the steady stage. In the steady stage,the maximal electron density increases as the driving frequency increases. The results show that the discharge region has three parts： the powered electrode sheath region, the bulk plasma region and the grounded electrode sheath region. In the growing rapidly stage（at 18 μs）, the results of the cycle-averaged electric field, electron temperature, electron density, and electric potentials for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are compared, respectively. Furthermore,the results of cycle-averaged electron pressure cooling, electron ohmic heating, electron heating, and electron energy loss for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are discussed, respectively. It is also found that the effect of the cycle-averaged electron pressure cooling on the electrons is to ＂cool＂ the electrons; the effect of the electron ohmic heating on the electrons is always to ＂heat＂ the electrons; the effect of the cycle-averaged electron ohmic heating on the electrons is stronger than the effect of the cycle-averaged electron pressure cooling on the electrons in the discharge region except in the regions near the electrodes. Therefore, the effect of the cycle-averaged electron heating on the electrons is to ＂heat＂ the electrons in the discharge region except in the regions near the electrodes. However, in the regions near the electrodes, the effect of the cycle-averaged electron heating on the electron is to ＂cool＂ the electrons. Finally, the space distributions of the electron pressure cooling the electron ohmic heating and the electron heating at 1/4 T, 2/4 T, 3/4 T, and 4/4 T in one RF-cycle are presented and compared.

Plasma characteristics and broadband electromagnetic wave absorption in argon and helium capacitively coupled plasma

A one-dimensional self-consistent calculation model of capacitively coupled plasma(CCP)discharge and electromagnetic wave propagation is developed to solve the plasma characteristics and electromagnetic wave transmission attenuation.Numerical simulation results show that the peak electron number density of argon is about 12 times higher than that of helium,and that the electron number density increases with the augment of pressure,radio frequency(RF)power,and RF frequency.However,the electron number density first increases and then decreases as the discharge gap increases.The transmission attenuation of electromagnetic wave in argon discharge plasma is 8.5-dB higher than that of helium.At the same time,the transmission attenuation increases with the augment of the RF power and RF frequency,but it does not increase or decrease monotonically with the increase of gas pressure and discharge gap.The electromagnetic wave absorption frequency band of the argon discharge plasma under the optimal parameters in this paper can reach the Ku band.It is concluded that the argon CCP discharge under the optimal discharge parameters has great potential applications in plasma stealth.

Effect of Addition of Nitrogen to a Capacitively Radio-Frequency Hydrogen Discharge

A hybrid PIC/MC model is developed in this work for H2-xN2 capacitively coupled radio-frequency （CCRF） discharges in which we take into account 43 kinds of collisions reaction processes between charged particles （e-, H3＋, H＋, H＋, N＋, N＋） and ground-state molecules （H2, H＋ N2）. In addition, the mean energies and densities of electrons and ions （ 3, H＋, H＋）, and electric field distributions in the H2-N2 CCRF discharge are simulated by this model. Furthermore, the effects of addition of a variable percentage of nitrogen （0-30%） into the H2 discharge on the plasma processes and discharge characteristics are studied. It is shown that by increasing the percentage of nitrogen added to the system, the RF sheath thickness will narrow, the sheath electric field will be enhanced, and the mean energy of hydrogen ions impacting the electrodes will be increased. Because the electron impact ionization and dissociative ionization rates increase when N2 is added to the system, the electron mean density will increase while the electron mean energy and hydrogen ion density near the electrodes will decrease. This work aims to provide a theoretical basis for experimental studies and technological developments with regard to H2-N2 CCRF plasmas.