Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect...Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented, and have an average transmittance ~85% in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13.8 Ω·cm with the carrier concentration as high as 1.07×1018 cm-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.展开更多
Gamma-aminobutyric acid(GABA)ergic neurons,the most abundant inhibitory neurons in the human brain,have been found to be reduced in many neurological disorders,including Alzheimer's disease and Alzheimer's dis...Gamma-aminobutyric acid(GABA)ergic neurons,the most abundant inhibitory neurons in the human brain,have been found to be reduced in many neurological disorders,including Alzheimer's disease and Alzheimer's disease-related dementia.Our previous study identified the upregulation of microRNA-502-3p(miR-502-3p)and downregulation of GABA type A receptor subunitα-1 in Alzheimer's disease synapses.This study investigated a new molecular relationship between miR-502-3p and GABAergic synapse function.In vitro studies were perfo rmed using the mouse hippocampal neuronal cell line HT22 and miR-502-3p agomiRs and antagomiRs.In silico analysis identified multiple binding sites of miR-502-3p at GABA type A receptor subunitα-1 mRNA.Luciferase assay confirmed that miR-502-3p targets the GABA type A receptor subunitα-1 gene and suppresses the luciferase activity.Furthermore,quantitative reve rse transcription-polymerase chain reaction,miRNA in situ hybridization,immunoblotting,and immunostaining analysis confirmed that overexpression of miR-502-3p reduced the GABA type A receptor subunitα-1 level,while suppression of miR-502-3p increased the level of GABA type A receptor subunitα-1 protein.Notably,as a result of the overexpression of miR-502-3p,cell viability was found to be reduced,and the population of necrotic cells was found to be increased.The whole cell patch-clamp analysis of human-GABA receptor A-α1/β3/γ2L human embryonic kidney(HEK)recombinant cell line also showed that overexpression of miR-502-3p reduced the GABA current and overall GABA function,suggesting a negative correlation between miR-502-3p levels and GABAergic synapse function.Additionally,the levels of proteins associated with Alzheimer s disease were high with miR-502-3p overexpression and reduced with miR-502-3p suppression.The present study provides insight into the molecular mechanism of regulation of GABAergic synapses by miR-502-3p.We propose that micro-RNA,in particular miR-502-3p,could be a potential therapeutic to rget to modulate GABAergic synapse function in neurological disorders,including Alzheimer's disease and Alzheimer's diseaserelated dementia.展开更多
The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energ...The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.展开更多
In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equat...In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.展开更多
The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 rema...The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa(2) than those of ZnGa(1) are due to more empty energy states of ZnGa(2) than those of ZnGa(1) near Ef in the near infrared region.展开更多
The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O(1) atom is the most sta...The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O(1) atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.展开更多
We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the concentration of 2.77% - 8.33% by using the first-principles calculations. The ferromagnetic coupl...We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the concentration of 2.77% - 8.33% by using the first-principles calculations. The ferromagnetic coupling of Cu atoms in (Cu, N)-codoped ZnO can be attributed to the hole-mediated double-exchange through the strong 2p-3d coupling between Cu and neighboring O (or N) atoms. The ferromagnetism in Cu-doped ZnO is controllable by changing the carrier density. The Cu magnetic moment in low Cu concentration (2.77%) is increased by the N-doping, while for the F-doping it decreases. For two Cu atoms of Zn0.9445Cu0.0555O with O vacancy, the antiferromagnetic state is more energetically favorable than the ferromagnetic state.展开更多
MicroRNAs(miRNA)are recently discovered endogenous,small noncoding RNAs(of 22 nucleotides)that play pivotal roles in gene regulation.They are involved in post-transcriptional control of gene expression.miRNAs are emer...MicroRNAs(miRNA)are recently discovered endogenous,small noncoding RNAs(of 22 nucleotides)that play pivotal roles in gene regulation.They are involved in post-transcriptional control of gene expression.miRNAs are emerging as important regulators of cell proliferation,development,cancer formation,stress responses,cell death and physiological conditions.Increasing evidence has demonstrated the human miRNAs bind to their target mRNA sequences with perfect or near-perfect sequence complementarily.This provides a powerful strategy for discovering potential type 2 diabetes mellitus(T2DM)targets and gives the probability to exploit them for diagnostic and therapeutic causes.About 6%of the world population is affected by T2DM,and it is recognized as a global epidemic by the World Health Organization.At present there is no valid biomarker to control or manage T2DM.Therefore,the present study applied a mature sequence of miRNAs from publicly accessible databases to identify the miRNA from T2DM expressed sequence tags,and the results are detailed and discussed below.展开更多
Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the shor...Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent(2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.展开更多
Zinc oxide (ZnO) is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite ...Zinc oxide (ZnO) is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.展开更多
AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory ...AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.展开更多
The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,...The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg3Sb2 shows low figure of merit(z T = 0.23 at 723 K) for its poor electrical conductivity.In this study,a series of Mg(3-x)LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering(SPS) process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.展开更多
The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy(X :O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1) are studied by first-principles calculations using a pseudopotential plane-wave meth...The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy(X :O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1) are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.展开更多
基金Natural Science Foundation (60576063)Science and Technology Project of Zhejiang province(2008F70015)
文摘Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented, and have an average transmittance ~85% in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13.8 Ω·cm with the carrier concentration as high as 1.07×1018 cm-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.
基金supported by the National Institute on Aging (NIA)National Institutes of Health (NIH)+3 种基金Nos.K99AG065645,R00AG065645R00AG065645-04S1 (to SK)NIH research grants,NINDS,No.R01 NS115834NINDS/NIA,No.R01 NS115834-02S1 (to LG)。
文摘Gamma-aminobutyric acid(GABA)ergic neurons,the most abundant inhibitory neurons in the human brain,have been found to be reduced in many neurological disorders,including Alzheimer's disease and Alzheimer's disease-related dementia.Our previous study identified the upregulation of microRNA-502-3p(miR-502-3p)and downregulation of GABA type A receptor subunitα-1 in Alzheimer's disease synapses.This study investigated a new molecular relationship between miR-502-3p and GABAergic synapse function.In vitro studies were perfo rmed using the mouse hippocampal neuronal cell line HT22 and miR-502-3p agomiRs and antagomiRs.In silico analysis identified multiple binding sites of miR-502-3p at GABA type A receptor subunitα-1 mRNA.Luciferase assay confirmed that miR-502-3p targets the GABA type A receptor subunitα-1 gene and suppresses the luciferase activity.Furthermore,quantitative reve rse transcription-polymerase chain reaction,miRNA in situ hybridization,immunoblotting,and immunostaining analysis confirmed that overexpression of miR-502-3p reduced the GABA type A receptor subunitα-1 level,while suppression of miR-502-3p increased the level of GABA type A receptor subunitα-1 protein.Notably,as a result of the overexpression of miR-502-3p,cell viability was found to be reduced,and the population of necrotic cells was found to be increased.The whole cell patch-clamp analysis of human-GABA receptor A-α1/β3/γ2L human embryonic kidney(HEK)recombinant cell line also showed that overexpression of miR-502-3p reduced the GABA current and overall GABA function,suggesting a negative correlation between miR-502-3p levels and GABAergic synapse function.Additionally,the levels of proteins associated with Alzheimer s disease were high with miR-502-3p overexpression and reduced with miR-502-3p suppression.The present study provides insight into the molecular mechanism of regulation of GABAergic synapses by miR-502-3p.We propose that micro-RNA,in particular miR-502-3p,could be a potential therapeutic to rget to modulate GABAergic synapse function in neurological disorders,including Alzheimer's disease and Alzheimer's diseaserelated dementia.
基金supported by the Project of Combination of Production and Research Guided by Ministry in 2009,China (Grant No. 2009B090300338)the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163)the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong,China (Grant No. 2007A010501008)
文摘The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.
基金Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México
文摘In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.
基金Project supported by the National Natural Science Foundation of China(Grant No.10974077)the Natural Science Foundation of Shandong Province,China(Grant No.2009ZRB01702)the Shandong Provincial Higher Educational Science and Technology Program,China(Grant No.J10LA08)
文摘The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa(2) than those of ZnGa(1) are due to more empty energy states of ZnGa(2) than those of ZnGa(1) near Ef in the near infrared region.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10974077)the Natural Science Foundation of Shandong Province,China (Grant No. 2009ZRB01702)the Shandong Provincial Higher Educational Science and Technology Program,China (Grant No. J10LA08)
文摘The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O(1) atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.
文摘We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the concentration of 2.77% - 8.33% by using the first-principles calculations. The ferromagnetic coupling of Cu atoms in (Cu, N)-codoped ZnO can be attributed to the hole-mediated double-exchange through the strong 2p-3d coupling between Cu and neighboring O (or N) atoms. The ferromagnetism in Cu-doped ZnO is controllable by changing the carrier density. The Cu magnetic moment in low Cu concentration (2.77%) is increased by the N-doping, while for the F-doping it decreases. For two Cu atoms of Zn0.9445Cu0.0555O with O vacancy, the antiferromagnetic state is more energetically favorable than the ferromagnetic state.
文摘MicroRNAs(miRNA)are recently discovered endogenous,small noncoding RNAs(of 22 nucleotides)that play pivotal roles in gene regulation.They are involved in post-transcriptional control of gene expression.miRNAs are emerging as important regulators of cell proliferation,development,cancer formation,stress responses,cell death and physiological conditions.Increasing evidence has demonstrated the human miRNAs bind to their target mRNA sequences with perfect or near-perfect sequence complementarily.This provides a powerful strategy for discovering potential type 2 diabetes mellitus(T2DM)targets and gives the probability to exploit them for diagnostic and therapeutic causes.About 6%of the world population is affected by T2DM,and it is recognized as a global epidemic by the World Health Organization.At present there is no valid biomarker to control or manage T2DM.Therefore,the present study applied a mature sequence of miRNAs from publicly accessible databases to identify the miRNA from T2DM expressed sequence tags,and the results are detailed and discussed below.
基金Project supported by the State Key Program for Basic Research of China(Grant No.2011CB302003)the National Natural Science Foundation of China(Grant Nos.61274058,61322403,61504057,and 61574075)+1 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20130013 and BK20150585)the Six Talent Peaks Project in Jiangsu Province,China(Grant No.2014XXRJ001)
文摘Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent(2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.
基金Funded by the National Social Science Fund Project(No.2012BTY014)
文摘Zinc oxide (ZnO) is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant Nos.2017B010127001 and 2015B010105011)+4 种基金the Education Department Project of Guangdong Province,China(Grant No.2017KZDXM022)the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)the Science and Technology Project of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Science and Technology Planning of Guangdong Province,China(Grant No.2015B010112002)
文摘AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1601213 and 51572287)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH013)
文摘The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg3Sb2 shows low figure of merit(z T = 0.23 at 723 K) for its poor electrical conductivity.In this study,a series of Mg(3-x)LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering(SPS) process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.
基金Project supported by the National Natural Science Foundation of China (Grant No 10625416).
文摘The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy(X :O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1) are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.