X1（Me O-TPD） is an inexpensive and easily synthesized π-conjugated molecule that has been used as a hole-transport material（HTM） in solid-state dye-sensitized solar cells（ssDSSCs）, achieving relatively high eff...X1（Me O-TPD） is an inexpensive and easily synthesized π-conjugated molecule that has been used as a hole-transport material（HTM） in solid-state dye-sensitized solar cells（ssDSSCs）, achieving relatively high efficiency. In this paper, we characterize the physicochemical properties of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone（DDQ） and show that it is a promising p-dopant in a spin-coating solution with X1 as the HTM. The doped ssDSSCs showed an increase in short-circuit current density from 5.38 mA cm-2 to7.39 mA cm-2, and their overall power conversion efficiency increased from 2.9% to 4.3%. Also, ssDSSCs with DDQ-doped X1 were more stable than the undoped samples, demonstrating that DDQ can act as a p-type dopant in X1 as an HTM for highly efficient, stable ssDSSCs.展开更多
High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a...High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.展开更多
Nitrogen-doped ZnO （ZnO：N） films are prepared by thermal oxidation of sputtered Zn3N2 layers on A1203 substrates. The correlation between the structural and optical properties of ZnO：N films and annealing temperat...Nitrogen-doped ZnO （ZnO：N） films are prepared by thermal oxidation of sputtered Zn3N2 layers on A1203 substrates. The correlation between the structural and optical properties of ZnO：N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn3N2 films are transformed into ZnO：N films after annealing above 600℃. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO：N films： the No acceptor and the double donor （N2）o. Due to the No acceptor, the hole concentration in the film annealed at 700℃ is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.展开更多
We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ wit...We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ with a step of 100 ℃ for one hour using a programmable furnace. The concentration of P was controlled by varying the annealing temperature and the maximum solubility of P （3% At） was achieved at annealing 800 ℃ determined by energy dispersive X-ray diffraction （EDX） measurements. X-ray diffraction （XRD） confirmed the hexagonal structure of ZnO and showed that the growth direction was along the c-axis. We observed a maximum up shift in the （002） plane at an annealing temperature of 800 ℃, suggesting that P atoms replaced Zn atoms in the structure which results in the reduction of the lattice constant. Room temperature photoluminescence （PL） spectrum consists of a peak at 3.28 eV and related to band edge emission, but samples annealed at 800 and 900 ℃ have an additional donor acceptor pair peak at 3.2 eV. Hall effect measurements confirmed the p-type conductivity of the sample annealed at 800 ℃.展开更多
基金financially supported by the National Natural Science Foundation of China (51661135021, 21606039, 21507008, 91233201, 21276044)supported by the National Natural Science Foundation of China
文摘X1（Me O-TPD） is an inexpensive and easily synthesized π-conjugated molecule that has been used as a hole-transport material（HTM） in solid-state dye-sensitized solar cells（ssDSSCs）, achieving relatively high efficiency. In this paper, we characterize the physicochemical properties of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone（DDQ） and show that it is a promising p-dopant in a spin-coating solution with X1 as the HTM. The doped ssDSSCs showed an increase in short-circuit current density from 5.38 mA cm-2 to7.39 mA cm-2, and their overall power conversion efficiency increased from 2.9% to 4.3%. Also, ssDSSCs with DDQ-doped X1 were more stable than the undoped samples, demonstrating that DDQ can act as a p-type dopant in X1 as an HTM for highly efficient, stable ssDSSCs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103)
文摘High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
基金Supported by the National Natural Science Foundation of China under Grant No 50532070
文摘Nitrogen-doped ZnO （ZnO：N） films are prepared by thermal oxidation of sputtered Zn3N2 layers on A1203 substrates. The correlation between the structural and optical properties of ZnO：N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn3N2 films are transformed into ZnO：N films after annealing above 600℃. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO：N films： the No acceptor and the double donor （N2）o. Due to the No acceptor, the hole concentration in the film annealed at 700℃ is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.
基金the Higher Education Commission (HEC) of Pakistan for the financial assistance under project # IPFP/HRD/HEC/2014/2016
文摘We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ with a step of 100 ℃ for one hour using a programmable furnace. The concentration of P was controlled by varying the annealing temperature and the maximum solubility of P （3% At） was achieved at annealing 800 ℃ determined by energy dispersive X-ray diffraction （EDX） measurements. X-ray diffraction （XRD） confirmed the hexagonal structure of ZnO and showed that the growth direction was along the c-axis. We observed a maximum up shift in the （002） plane at an annealing temperature of 800 ℃, suggesting that P atoms replaced Zn atoms in the structure which results in the reduction of the lattice constant. Room temperature photoluminescence （PL） spectrum consists of a peak at 3.28 eV and related to band edge emission, but samples annealed at 800 and 900 ℃ have an additional donor acceptor pair peak at 3.2 eV. Hall effect measurements confirmed the p-type conductivity of the sample annealed at 800 ℃.
