The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of ...The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
基金supported by the National Key Technologies R&D Program in 10th Five-year Plan of China(2001BA507A)the National Natural Sicence Foundation of China(39760040).
文摘The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
