Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of a...Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.展开更多
The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- ...The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.展开更多
Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resis...Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.展开更多
Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content ...Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content in the starting solution and substrate temperature were studied. The film structure was polycrystalline in all cases, showing that the intensity of (200) peak increased with the water content in the starting solution. The electrical resistivity decreased with the water content, reaching a minimum value, in the order of 8 × 10-4 Ωcm, for films deposited at 450℃ from a starting solution with a water content of 10 ml per 100 ml of solution;further increase in water content increased the corresponding resistivity. Optical transmittances of SnO2:F films were high, in the order of 75%, and the band gap values oscillated around 3.9 eV. SEM analysis showed uniform surface morphologies with different geometries depending on the deposition conditions. Composition analysis showed a stoichiometric compound with a [Sn/O] ratio around 1:2 in all samples. The presence of F into the SnO2 lattice was detected, within 2 at % respect to Sn.展开更多
IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99...IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.展开更多
SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide(SnOx)thin fi...SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide(SnOx)thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm^2/(V s).展开更多
Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characteriz...Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.展开更多
文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
文摘The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.
基金Financial support from the University Grants Commission ofIndia through the Major Research Project(F.No.40-28/2011(SR))the DST Grant(D.O.No.SR/S2/CMP-35/2004)
文摘Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.
基金Project(NIPA-2013-H0301-13-2009) supported by the MKE,Korea,under the ITRC support program supervised by the NIPAProject(2012HIB8A2026212) supported by the MEST and NRF through the Human Resource Training Project for Regional Innovation,Kored
基金This work was partially supported by CONACyT under contract Number 166601.
文摘Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content in the starting solution and substrate temperature were studied. The film structure was polycrystalline in all cases, showing that the intensity of (200) peak increased with the water content in the starting solution. The electrical resistivity decreased with the water content, reaching a minimum value, in the order of 8 × 10-4 Ωcm, for films deposited at 450℃ from a starting solution with a water content of 10 ml per 100 ml of solution;further increase in water content increased the corresponding resistivity. Optical transmittances of SnO2:F films were high, in the order of 75%, and the band gap values oscillated around 3.9 eV. SEM analysis showed uniform surface morphologies with different geometries depending on the deposition conditions. Composition analysis showed a stoichiometric compound with a [Sn/O] ratio around 1:2 in all samples. The presence of F into the SnO2 lattice was detected, within 2 at % respect to Sn.
基金supported by the Ministry of Education,Science Technology (MEST) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Regional Innovation
文摘IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
基金financially supported by the Spanish Ministry of Science, Innovation and Universities (No. MAT2015-66649-R)
文摘SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide(SnOx)thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm^2/(V s).
文摘Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.
