The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential vale...The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.展开更多
In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO）...The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO） anode and the PEDOT：PSS layer resulted in a maximum power conversion efficiency （PCE） of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density （Jsc）. The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb（aca）3phen with its strong down-conversion luminescence properties is suitable for the P3HT：PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphol- ogy of P3HT：PCBM films were improved with the Tb（aca）3phen ultrathin film. The ultraviolent-visible absorption spectra, atomic force microscope （AFM）, and X-ray diffraction （XRD） of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb（aca）3phen in P3HT：PCBM solar cells led to about a 12% PCE increase.展开更多
Organic solar cells （OSCs） is a new generation of solar cells have emerged as an alternative to conventional Si-based solar cells owing to their advantages of low cost, ease of fabrication and their potential for th...Organic solar cells （OSCs） is a new generation of solar cells have emerged as an alternative to conventional Si-based solar cells owing to their advantages of low cost, ease of fabrication and their potential for the manufacture of flexible and large area solar cells. So we chose that part to beginning study of the material and all parameters effects in environmental condition because the solar cell working in environment. In this study the fabrication of poly（3-hexylthiophene） （P3HT） and [6,6]-phenyl C61-butyric acid methyl ester （PCBM） blend flexible thin film using spin coating was reported. Process parameters like solvent, electron donor to acceptor ratio, concentration and temperature were also studied. We used solvent systems to make active layer of P3HT：PCBM composite and PEDOT：PSS as a buffer layer. Highest absorption was obtained for the flexible thin film made with 1：1 and 1：0.75 ratio of P3HT to PCBM. Chloroform solvent in 40 gm/ml concentration at 90 ~C was the optimum conditions to make flexible device.展开更多
The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electro...The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.展开更多
文摘The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
基金supported by the National Basic Research Program of China(Grant Nos.2011CB932700 and 2011CB932703)the National Outstanding Youth Science Foundation of China(Grant No.60825407)+2 种基金the National Natural Science Foundation of China(Grant Nos.61335006,61378073,60877025,61077044,and 91123025)the Beijing Natural Science Foundation,China(Grant No.4132031)the Fundamental Research Funds for the Central Universities,China(Grant No.2012YJS116)
文摘The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO） anode and the PEDOT：PSS layer resulted in a maximum power conversion efficiency （PCE） of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density （Jsc）. The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb（aca）3phen with its strong down-conversion luminescence properties is suitable for the P3HT：PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphol- ogy of P3HT：PCBM films were improved with the Tb（aca）3phen ultrathin film. The ultraviolent-visible absorption spectra, atomic force microscope （AFM）, and X-ray diffraction （XRD） of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb（aca）3phen in P3HT：PCBM solar cells led to about a 12% PCE increase.
文摘Organic solar cells （OSCs） is a new generation of solar cells have emerged as an alternative to conventional Si-based solar cells owing to their advantages of low cost, ease of fabrication and their potential for the manufacture of flexible and large area solar cells. So we chose that part to beginning study of the material and all parameters effects in environmental condition because the solar cell working in environment. In this study the fabrication of poly（3-hexylthiophene） （P3HT） and [6,6]-phenyl C61-butyric acid methyl ester （PCBM） blend flexible thin film using spin coating was reported. Process parameters like solvent, electron donor to acceptor ratio, concentration and temperature were also studied. We used solvent systems to make active layer of P3HT：PCBM composite and PEDOT：PSS as a buffer layer. Highest absorption was obtained for the flexible thin film made with 1：1 and 1：0.75 ratio of P3HT to PCBM. Chloroform solvent in 40 gm/ml concentration at 90 ~C was the optimum conditions to make flexible device.
文摘The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.
