This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana...This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.展开更多
Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier...Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.展开更多
主要研究采用IBM公司SOI 0.18μm CMOS工艺设计应用于1.95 GHz WCDMA发射机的全集成线性功率放大器的设计方法。电路采用三级AB类放大器级联结构,模拟结果显示,在工作电压为2.5 V的情况下,CMOS射频功率放大器工作稳定,1 d B压缩点输出...主要研究采用IBM公司SOI 0.18μm CMOS工艺设计应用于1.95 GHz WCDMA发射机的全集成线性功率放大器的设计方法。电路采用三级AB类放大器级联结构,模拟结果显示,在工作电压为2.5 V的情况下,CMOS射频功率放大器工作稳定,1 d B压缩点输出功率约为30 d Bm,增益约为28 d B,最大功率增加效率(PAE)约为42%。展开更多
文摘This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.
基金supported by the National Natural Science Foundation of China (Grant no.61571063, 61472357, 61501100)
文摘Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.
基金Supported by the National Natural Science Foundation of China (61822407,62074161,62004213)the National Key Research and Development Program of China under (2018YFE0125700)。
文摘主要研究采用IBM公司SOI 0.18μm CMOS工艺设计应用于1.95 GHz WCDMA发射机的全集成线性功率放大器的设计方法。电路采用三级AB类放大器级联结构,模拟结果显示,在工作电压为2.5 V的情况下,CMOS射频功率放大器工作稳定,1 d B压缩点输出功率约为30 d Bm,增益约为28 d B,最大功率增加效率(PAE)约为42%。
