Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap eng...Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xWxSe2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition(CVD) method. Mo1-x Wx Se2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence(PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xWxSe2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xWxSe2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xWxSe2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.展开更多
Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ ...Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).展开更多
Anatase TiO2 sol was synthesized under mild conditions （75℃ and ambient pressure） by hydrolysis of titaniumn-butoxide in abundant acidic aqueous solution and subsequent reflux to enhance crystallization. At room te...Anatase TiO2 sol was synthesized under mild conditions （75℃ and ambient pressure） by hydrolysis of titaniumn-butoxide in abundant acidic aqueous solution and subsequent reflux to enhance crystallization. At room temperature and in ambient atmosphere, crystalline TiO2 thin films were deposited on polymethylmethacrylate （PMMA）, SiO2-coated PMMA and SiO2-coated silicone rubber substrates from the as-prepared TiO2 sol by a dip-coating process. SiO2 layers prior to TiO2 thin films on polymer substrates could not only protect the substrates from the photocatalytic decomposition of the TiO2 thin films but also enhance the adhesion of the TiO2 thin films to the substrates. Field-emission type scanning electron microscope （FE-SEM） investigations revealed that the average particle sizes of the nanoparticles composing the TiO2 thin films were about 35-47 nm. The TiO2 thin films exhibited high photocatalytic activities in the degradation of reactive brilliant red dye X-3B in aqueous solution under aerated conditions. The preparation process of photocatalytic TiO2 thin films on the polymer substrates was quite simple and a low temperature route.展开更多
Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties an...Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surface morphology of as-grownβ-Ga_(2)O_(3)thin films were investigated in detail.It was found that by using thin buffer layer and mis-cut substrate technology,the full width at half maximum(FWHM)of the()diffraction peak of theβ-Ga_(2)O_(3)film is decreased from 2°on c-plane(0001)Al_(2)O_(3)substrate to 0.64°on an 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.The surface root-mean-square(RMS)roughness can also be improved greatly and the value is 1.27 nm for 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.Room temper-ature photoluminescence(PL)was observed,which was attributed to the self-trapped excitons formed by oxygen and gallium vacancies in the film.The ultraviolet-blue PL intensity related with oxygen and gallium vacancies is decreased with the increas-ing mis-cut angle,which is in agreement with the improved crystal quality measured by high resolution X-ray diffraction(HR-XRD).The present results provide a route for growing high qualityβ-Ga_(2)O_(3)film on Al_(2)O_(3)substrate.展开更多
The thermal barrier coatings with NiCrAlY alloy bonding layer, NiCrAlY Y 2O 3 stabilized ZrO 2 transition layer and Y 2O 3 stabilized ZrO 2 ceramic layer are prepared on nickel alloy substrates using the plasma spray ...The thermal barrier coatings with NiCrAlY alloy bonding layer, NiCrAlY Y 2O 3 stabilized ZrO 2 transition layer and Y 2O 3 stabilized ZrO 2 ceramic layer are prepared on nickel alloy substrates using the plasma spray technique. The relationship among the composition, structure and property of the coatings are investiga ted by means of optical microscope, scanning electronic microscope and the experiments of thermal shock resistance cycling and high temperature oxidation resistance. The results show that the structure design of introdu cing a transition layer between Ni alloy substrate and ZrO 2 ceramic coating guarantees the high quality and properties of the coatings; ZrO 2 coatings doped with a little SiO 2 possesses better thermal shock resistance and more excellent hot corrosion resistance as compared with ZrO 2 coating materials without SiO 2 ;the improvement in performance of ZrO 2 coating doped with SiO 2 is due to forming more dense coating structure by self closing effects of the flaws and pores in the ZrO 2 coatings.展开更多
Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Her...Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.展开更多
Self-standing carbon-based substrates with satisfied structural stability and property adjustability have promising applications in flexible lithium(Li)metal batteries(FLMBs).Current strategies for modifying carbon ma...Self-standing carbon-based substrates with satisfied structural stability and property adjustability have promising applications in flexible lithium(Li)metal batteries(FLMBs).Current strategies for modifying carbon materials are normally carried out on powder carbon,and very few of them are suitable for self-standing carbon substrates.Herein,a pore-forming strategy based on the redox chemistry of metallic oxide nanodots is developed to prepare two porous carbon substrates for anode and cathode.Starting with cotton cloth,the resulting hollow carbon fibers substrate with nanopores effectively prevents from Li dendrites formation and large volume change in lithium metal anode(LMA).Simulations indicate that the porous structure leads to homogeneous ion flux,Li-ion concentration,and electric field during Li deposition.Li symmetrical cell based on this substrate remains stable for 8300 h with an ultralow voltage hysteresis of 9 mV.Via a similar route,porous carbon cloth substrate is obtained for subsequently seeding V_(2)O_(5)nanowires to prepare the cathode.The assembled FLMBs pouch cell delivers a capacity of 8.2 mAh with a high capacity retention of~100%even under dramatic deformation.The demonstrated strategy has far-reaching potential in preparing free-standing porous carbon-based materials for flexible energy storage devices.展开更多
The reaction mechanism of PCl3/H2 on silicon substrate surface （simulated by Si4 cluster） was investigated with Density Functional Theory （DFT） at the B3LYP/6-311G^＊＊ level. On silicon substrate, PCl3 firstly un...The reaction mechanism of PCl3/H2 on silicon substrate surface （simulated by Si4 cluster） was investigated with Density Functional Theory （DFT） at the B3LYP/6-311G^＊＊ level. On silicon substrate, PCl3 firstly undergoes dissociative adsorption, and then the adsorption product reacts with H2 via a four-step multi-channel mode to give the final product PSi4 cluster. The geometries at each stationary point were fully optimized. The possible transition states were determined by vibrational mode analysis and IRC verification. And finally, the main reaction channel was given.展开更多
LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks w...LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.展开更多
We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detecto...We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.展开更多
TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surf...TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surface composition,UV-visible spectra of the films were measured by scanning electron microscopy and X-ray diffraction,and X-ray photoelectron spectroscopy,respectively.The experimental results show that the films are amorphous,there are only Ti^4＋ and Ce^4＋ on the surface of the films,the obtained TiO2-CeO2 films shou a good uniformity and high densification,and the films deposited on the glass can shield ultraviolet light without significant absorpition of visible light,the films deposited on substrates at room temperature and 220℃ absorb UV effectively.展开更多
The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositi...The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.展开更多
Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flex...Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2 Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained fexible films suitable for electronic applications.展开更多
Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The ...Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The X-ray 2θ-θ diffraction, ω scan, Φ scan and electron channelling pattern (ECP) shown that thefilms liave high lattice perfection. The relation of growth conditions and film structure was also studied. Thespudering gas presure and subetrate temperature are the most important parameters preparing fer high qualitybeO_2 films.展开更多
Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt...Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt tne rCSUltS OIJ、)IU一A’cm一IorY廿tU Illms on suoslrale 01 slngleerystal ZrO:(100)have not been found out inPublished PaPers 50 far.Owing to themierostrueture eharacters and highJ。ofYBCO films by contrast with bulk it 15 themost Possible to aPPly the fllms to eleetronicfield first.Therefore it 15 more signifieant toimProve values ofjcsubstrate with betterPIOCeSSJc>展开更多
Hydrothermal(HT)ZnO substrates were usually used as seeds for the vapor growth of ZnO crystals.In this work,ZnO bulk crystals were grown using the relatively low-cost GaN/AlOsubstrates as seeds by chemical vapor trans...Hydrothermal(HT)ZnO substrates were usually used as seeds for the vapor growth of ZnO crystals.In this work,ZnO bulk crystals were grown using the relatively low-cost GaN/AlOsubstrates as seeds by chemical vapor transport(CVT).With the increase of growth time,the dislocation densities in the crystal decreased from about 1×10^(6) to 6×10^(3) cm^(-2).The carrier concentration decreased from 1.24×10^(19) to 1.57×10^(17)cm^(-3),while the carrier mobility increased from 63.8 to 179 cm^(2)/(V·s).The optical transmittance in the VIS-NIR wavelength increased significantly in combination with the decreasing dislocation densities and impurity concentrations.The dislocation lines and related fast diffusion paths gradually decreased and disappeared in the late growth stage,and the crystal qualities were consequently improved.The experimental results show that the properties of as-grown ZnO crystals are comparable with bulk ZnO grown on the HT substrates to some extent.The GaN/Al_(2)O_(3) seeds may have a potential application value in the industrial production of ZnO single crystals.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11504111,61574060)the Projects of Science and Technology Commission of Shanghai Municipality(Nos.15JC1401800,14DZ2260800)+3 种基金the Program for Professor of Special Appointment(Eastern Scholar)the Shanghai Rising-Star Program(No.17QA1401400)the Young Elite Scientists Sponsorship(YESS)Program by CASTthe Fundamental Research Funds for the Central Universities
文摘Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xWxSe2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition(CVD) method. Mo1-x Wx Se2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence(PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xWxSe2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xWxSe2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xWxSe2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.
基金supported by the National Key R&D Program of China(No.2018YFB0406502)the National Natural Science Foundation of China(Nos.61734001,61521004)
文摘Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).
文摘Anatase TiO2 sol was synthesized under mild conditions （75℃ and ambient pressure） by hydrolysis of titaniumn-butoxide in abundant acidic aqueous solution and subsequent reflux to enhance crystallization. At room temperature and in ambient atmosphere, crystalline TiO2 thin films were deposited on polymethylmethacrylate （PMMA）, SiO2-coated PMMA and SiO2-coated silicone rubber substrates from the as-prepared TiO2 sol by a dip-coating process. SiO2 layers prior to TiO2 thin films on polymer substrates could not only protect the substrates from the photocatalytic decomposition of the TiO2 thin films but also enhance the adhesion of the TiO2 thin films to the substrates. Field-emission type scanning electron microscope （FE-SEM） investigations revealed that the average particle sizes of the nanoparticles composing the TiO2 thin films were about 35-47 nm. The TiO2 thin films exhibited high photocatalytic activities in the degradation of reactive brilliant red dye X-3B in aqueous solution under aerated conditions. The preparation process of photocatalytic TiO2 thin films on the polymer substrates was quite simple and a low temperature route.
基金the National Key Research and Development Program of China(Grant No.2018YFB2200500)the National Natural Science Foundation(Grant Nos.62050073,62090054,61975196).
文摘Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surface morphology of as-grownβ-Ga_(2)O_(3)thin films were investigated in detail.It was found that by using thin buffer layer and mis-cut substrate technology,the full width at half maximum(FWHM)of the()diffraction peak of theβ-Ga_(2)O_(3)film is decreased from 2°on c-plane(0001)Al_(2)O_(3)substrate to 0.64°on an 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.The surface root-mean-square(RMS)roughness can also be improved greatly and the value is 1.27 nm for 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.Room temper-ature photoluminescence(PL)was observed,which was attributed to the self-trapped excitons formed by oxygen and gallium vacancies in the film.The ultraviolet-blue PL intensity related with oxygen and gallium vacancies is decreased with the increas-ing mis-cut angle,which is in agreement with the improved crystal quality measured by high resolution X-ray diffraction(HR-XRD).The present results provide a route for growing high qualityβ-Ga_(2)O_(3)film on Al_(2)O_(3)substrate.
文摘The thermal barrier coatings with NiCrAlY alloy bonding layer, NiCrAlY Y 2O 3 stabilized ZrO 2 transition layer and Y 2O 3 stabilized ZrO 2 ceramic layer are prepared on nickel alloy substrates using the plasma spray technique. The relationship among the composition, structure and property of the coatings are investiga ted by means of optical microscope, scanning electronic microscope and the experiments of thermal shock resistance cycling and high temperature oxidation resistance. The results show that the structure design of introdu cing a transition layer between Ni alloy substrate and ZrO 2 ceramic coating guarantees the high quality and properties of the coatings; ZrO 2 coatings doped with a little SiO 2 possesses better thermal shock resistance and more excellent hot corrosion resistance as compared with ZrO 2 coating materials without SiO 2 ;the improvement in performance of ZrO 2 coating doped with SiO 2 is due to forming more dense coating structure by self closing effects of the flaws and pores in the ZrO 2 coatings.
基金supported by National 863 Program 2011AA050518the Natural Science Foundation of China(Grant Nos.11174197,11574203,and 61234005)
文摘Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.
基金supported by NSFC(22035001,21574018,51433003)the National Science and Engineering Council of Canada,and the Fundamental Research Funds for the Central Universities(2412019ZD002)。
文摘Self-standing carbon-based substrates with satisfied structural stability and property adjustability have promising applications in flexible lithium(Li)metal batteries(FLMBs).Current strategies for modifying carbon materials are normally carried out on powder carbon,and very few of them are suitable for self-standing carbon substrates.Herein,a pore-forming strategy based on the redox chemistry of metallic oxide nanodots is developed to prepare two porous carbon substrates for anode and cathode.Starting with cotton cloth,the resulting hollow carbon fibers substrate with nanopores effectively prevents from Li dendrites formation and large volume change in lithium metal anode(LMA).Simulations indicate that the porous structure leads to homogeneous ion flux,Li-ion concentration,and electric field during Li deposition.Li symmetrical cell based on this substrate remains stable for 8300 h with an ultralow voltage hysteresis of 9 mV.Via a similar route,porous carbon cloth substrate is obtained for subsequently seeding V_(2)O_(5)nanowires to prepare the cathode.The assembled FLMBs pouch cell delivers a capacity of 8.2 mAh with a high capacity retention of~100%even under dramatic deformation.The demonstrated strategy has far-reaching potential in preparing free-standing porous carbon-based materials for flexible energy storage devices.
基金supported by the Foundation of Education Committee of Liaoning Province (990321076)
文摘The reaction mechanism of PCl3/H2 on silicon substrate surface （simulated by Si4 cluster） was investigated with Density Functional Theory （DFT） at the B3LYP/6-311G^＊＊ level. On silicon substrate, PCl3 firstly undergoes dissociative adsorption, and then the adsorption product reacts with H2 via a four-step multi-channel mode to give the final product PSi4 cluster. The geometries at each stationary point were fully optimized. The possible transition states were determined by vibrational mode analysis and IRC verification. And finally, the main reaction channel was given.
文摘LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.
基金Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314)the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China。
文摘We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.
文摘TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surface composition,UV-visible spectra of the films were measured by scanning electron microscopy and X-ray diffraction,and X-ray photoelectron spectroscopy,respectively.The experimental results show that the films are amorphous,there are only Ti^4＋ and Ce^4＋ on the surface of the films,the obtained TiO2-CeO2 films shou a good uniformity and high densification,and the films deposited on the glass can shield ultraviolet light without significant absorpition of visible light,the films deposited on substrates at room temperature and 220℃ absorb UV effectively.
文摘The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.
基金Supported by the National Basic Research Program of China under Grant No 2012CB619200the National Natural Science Foundation of China under Grant Nos 61290304,11074265 and 11174307+1 种基金the Natural Science Foundation of Shanghai under Grant No 16ZR1441200the Frontier Science Research Project(Key Programs)of Chinese Academy of Sciences under Grant No QYZDJ-SSW-SLH018
文摘Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2 Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained fexible films suitable for electronic applications.
文摘Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The X-ray 2θ-θ diffraction, ω scan, Φ scan and electron channelling pattern (ECP) shown that thefilms liave high lattice perfection. The relation of growth conditions and film structure was also studied. Thespudering gas presure and subetrate temperature are the most important parameters preparing fer high qualitybeO_2 films.
文摘Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt tne rCSUltS OIJ、)IU一A’cm一IorY廿tU Illms on suoslrale 01 slngleerystal ZrO:(100)have not been found out inPublished PaPers 50 far.Owing to themierostrueture eharacters and highJ。ofYBCO films by contrast with bulk it 15 themost Possible to aPPly the fllms to eleetronicfield first.Therefore it 15 more signifieant toimProve values ofjcsubstrate with betterPIOCeSSJc>
基金Funded by the National Natural Science Foundation of China(Nos.11905199,11904299,and U1930124)。
文摘Hydrothermal(HT)ZnO substrates were usually used as seeds for the vapor growth of ZnO crystals.In this work,ZnO bulk crystals were grown using the relatively low-cost GaN/AlOsubstrates as seeds by chemical vapor transport(CVT).With the increase of growth time,the dislocation densities in the crystal decreased from about 1×10^(6) to 6×10^(3) cm^(-2).The carrier concentration decreased from 1.24×10^(19) to 1.57×10^(17)cm^(-3),while the carrier mobility increased from 63.8 to 179 cm^(2)/(V·s).The optical transmittance in the VIS-NIR wavelength increased significantly in combination with the decreasing dislocation densities and impurity concentrations.The dislocation lines and related fast diffusion paths gradually decreased and disappeared in the late growth stage,and the crystal qualities were consequently improved.The experimental results show that the properties of as-grown ZnO crystals are comparable with bulk ZnO grown on the HT substrates to some extent.The GaN/Al_(2)O_(3) seeds may have a potential application value in the industrial production of ZnO single crystals.
