应用电子束辐照可以揭示载流子注入的半导体器件的电子注入对残余杂质和结构性缺陷的效应影响,对辐照引起改性的研究也十分重要。本文主要研究1.5Me V电子加速器、3Me V电子加速器、7.5Me V电子加速器、7.5Me V电子加速器X射线转靶几种...应用电子束辐照可以揭示载流子注入的半导体器件的电子注入对残余杂质和结构性缺陷的效应影响,对辐照引起改性的研究也十分重要。本文主要研究1.5Me V电子加速器、3Me V电子加速器、7.5Me V电子加速器、7.5Me V电子加速器X射线转靶几种电子束辐照对Al Ga In P材料LED发光性能的影响,并应用PL谱对比分析不同能量和剂量的电子束辐照对Al Ga In P材料LED外延片的辐照效应。在发光强度的变化上,在10k Gy剂量以下的1.5Me V电子束辐照和5k Gy剂量以下的3Me V电子束辐照下,辐照效应使发光强度增强,并随着剂量的增加,发光强度逐渐降低。本实验结果将被用于指导Al Ga In P材料LED的辐照改性实验。展开更多
ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and un...ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.展开更多
文摘应用电子束辐照可以揭示载流子注入的半导体器件的电子注入对残余杂质和结构性缺陷的效应影响,对辐照引起改性的研究也十分重要。本文主要研究1.5Me V电子加速器、3Me V电子加速器、7.5Me V电子加速器、7.5Me V电子加速器X射线转靶几种电子束辐照对Al Ga In P材料LED发光性能的影响,并应用PL谱对比分析不同能量和剂量的电子束辐照对Al Ga In P材料LED外延片的辐照效应。在发光强度的变化上,在10k Gy剂量以下的1.5Me V电子束辐照和5k Gy剂量以下的3Me V电子束辐照下,辐照效应使发光强度增强,并随着剂量的增加,发光强度逐渐降低。本实验结果将被用于指导Al Ga In P材料LED的辐照改性实验。
文摘ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.