The phase transitions, dielectric properties, and polarization versus electric field （P-E） hysteresis loops of Pbo.97Lao.02（Zr0.42Sn0.58-xTix）O3 （0.13≤ x ≤0.18） （PLZST） bulk ceramics were systematically inve...The phase transitions, dielectric properties, and polarization versus electric field （P-E） hysteresis loops of Pbo.97Lao.02（Zr0.42Sn0.58-xTix）O3 （0.13≤ x ≤0.18） （PLZST） bulk ceramics were systematically investigated. This study exhibited a sequence of phase transitions by analyzing the change of the P-E hysteresis loops with increasing temperature. The anfiferroelectric （AFE） to ferroelectric （FE） phase boundary of PLZST with the Zr content of 0.42 was found to locate at the Ti content between 0.14 and 0.15. This work is aimed to improve the ternary phase diagram of lanthanum-doped PZST with the Zr content of 0.42 and will be a good reference for seeking high energy storage density in the PLZST system with low-Zr content.展开更多
Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction meth...Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.51202273,11204304,and 11304334)the Science and Technology Commission of Shanghai Municipality,China(Grant No.14DZ2261000)
文摘The phase transitions, dielectric properties, and polarization versus electric field （P-E） hysteresis loops of Pbo.97Lao.02（Zr0.42Sn0.58-xTix）O3 （0.13≤ x ≤0.18） （PLZST） bulk ceramics were systematically investigated. This study exhibited a sequence of phase transitions by analyzing the change of the P-E hysteresis loops with increasing temperature. The anfiferroelectric （AFE） to ferroelectric （FE） phase boundary of PLZST with the Zr content of 0.42 was found to locate at the Ti content between 0.14 and 0.15. This work is aimed to improve the ternary phase diagram of lanthanum-doped PZST with the Zr content of 0.42 and will be a good reference for seeking high energy storage density in the PLZST system with low-Zr content.
基金Project supported by the National Natural Science Foundation of China(No.51175483)the National Science Fund for Distinguished Young Scholars(No.51225504)+1 种基金the Programf or New Century Excellent Talents in University(No.[2012]80)the Functional Materials Research Laboratory,Tongji University,China
文摘Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.
