Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates

PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.

Effect of TiO_2 Seed Layer on 0.7Pb(Mg_(0.33)Nb_(0.67))O_3-0.3PbTiO_3 Thin Films Deposited by Radio Frequency Magnetron Sputtering

We have grown PbMg1/3Nb2/3O3-PbTiO3(PMN-PT) thin films by radio frequency(RF) sputtering deposition at 550 ℃-650 ℃ on Pt/Ti/SiO2/Si and TiO2/Pt/Ti/SiO2/Si substrates.The phase compositions and microstructure of thin films were characterized by X-ray diffraction(XRD) and scanning electric microstructure(SEM).The effect of the TiO2 seed layer on PMN-PT films was studied.

Influence of TiO_2 seeding layers on phase composition of lead magnesium niobate-lead titanate thin films prepared by RF magnetron sputtering

The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.

PT种子层对PZT薄膜结晶及压电性能的影响

采用溶胶-凝胶法（Sol-Gel）在Pt/Si衬底上制备了PbTiO_3（PT）薄膜和Pb（Zr_x,Ti_（1-x））O_3（PZT）薄膜,研究了退火温度以及PT种子层对PZT薄膜结晶及压电性能的影响。X射线衍射（XRD）结果表明,制备的PZT薄膜为纯钙钛矿结构的多晶薄膜,有PT种子层的PZT薄膜晶粒尺寸更大,（110）面取向度更高,结晶性能更好;原子力显微镜（AFM）结果表明,制备的薄膜表面形貌比较平整、均匀、无裂纹;压电力显微镜（PFM）结果表明,压电力显微镜（PFM）结果表明,有PT种子层时,PZT薄膜的平均压电系数d_（33）为128~237 pm/V,无PT种子层时平均压电系数d_（33）为21~29 pm/V。在升温速率为10℃/s的退火条件下保温10 min时,随着退火温度的升高,PZT薄膜晶粒尺寸增大,粗糙度增大,（110）面取向度升高,平均压电系数d_（33）增大。PT种子层能够有效的改善PZT薄膜的结晶性能和压电性能。

PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb(1+x)TiO3/PbZr0·3Ti0·7O3/Pb(1+x)TiO3(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO3(PT)层进行制备,以获得优化的PT子晶层.X射线衍射和原子力显微镜分析结果表明PT层中过量Pb配比(x)对薄膜的微结构影响很大,只有PT层中Pb过量配比x=0·10—0·15的薄膜为表面晶粒大小均匀致密的纯钙钛矿结构.X射线电子能谱对薄膜微区进行元素成分分析表明,对x=0·00的薄膜,在表面和界面处Pb明显的缺乏;而x=0·20时的薄膜,Pb则明显的过量.薄膜的铁电性能、疲劳特性和漏电流特性等电学性能与PT层中过量Pb配比(x)没有明显的变化趋势,但与薄膜的结晶性能密切相关.结晶性能较好的薄膜,其电学性能也较好.说明PT层中过量Pb配比(x)是通过影响PT子晶层自身的结晶,而影响整个薄膜的结晶行为,并进一步影响到整个薄膜的电学性能.因此,在其他工艺参数都相同时,PT层中合适的过量Pb配比应为x=0·10—0·15.优化的子晶层不仅能获得结晶性能较好的薄膜,而且薄膜的电学性能也好.