PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effect...PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.展开更多
Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited s...Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited strong perpendicular magnetic anisotropy when the ratio of [-Co^2＋ ] to [-Pt^Ⅳ ] was 10 ; cathode current efficiency and perpendicular magnetic anisotropy showed little variations when [WO4^2- ] was lower than 0. 1 mol/L, but perpendicular magnetic anisotropy had strengthened when [WO4^2-] was over 0. 1 mol/L, which could be explained by the fact that the hydrogen evolution could produce pores as magnetic domain pinnings; citrate as complexing reagent can promote the polarization of [Co^2＋] and [Pt^Ⅳ]. As a result, the equilibrium electrode potentials of cobalt and platinum moved to negative direction, which led to the co-deposition of Co, Pt, and W. It was also found out that the as-deposited Co- Pt-W hard magnetic thin films were very homogeneous, smooth, and had the maximum coercivity for the bath pH 8. 5 and the concentration of citrate 0. 26 mol/L.展开更多
DyPt2 films were prepared by alternate deposition thin Dy and Pt layers on glass substrates by DC magneto controlled sputtering method. The XRD data indicated that for as-deposited Dy/Pt films, and the periodic layere...DyPt2 films were prepared by alternate deposition thin Dy and Pt layers on glass substrates by DC magneto controlled sputtering method. The XRD data indicated that for as-deposited Dy/Pt films, and the periodic layered structures along thickness direction were evidenced with low angle X-ray scattering. With increasing annealing temperature, the compounds of DyPt, DyPt2 and DyPt3 were formed successively at temperature ranging from 300 to 400 ℃. It was found that the composition reaction DyPt+DyPt3→2DyPt2 took place at 500 ℃. After annealing at 500 ℃ for 1 h, the compounds DyPt and DyPt3 transformed completely into the DyPt2 compound.展开更多
A photoelectrochemical process in the degradation of an azodye (Acid Orange II) on a Pt/TiO 2 film electrode was investigated. By using the glass device and the voltage stabilized source of direct current, decoloriza...A photoelectrochemical process in the degradation of an azodye (Acid Orange II) on a Pt/TiO 2 film electrode was investigated. By using the glass device and the voltage stabilized source of direct current, decolorization ratios higher than 78% were observed during a period of 5h. Comparing this value with the sum of the decolorization ratios obtained by a sole application of electrochemical(lower than 3%) and photochemical(about 23%) procedures, a significant synergic effect between both processes was observed. The effects of adscititious voltage and pH value on the decolorization ratios were obvious while the effect of the amount of aeration was minor.展开更多
The preparation of PT/PEK c films is reported as well as their dielectric and optical properties. The c axis orientation ratio of the films is 68%. Dielectric constant and loss factor at 10 kHz is about 4.023 F/m and ...The preparation of PT/PEK c films is reported as well as their dielectric and optical properties. The c axis orientation ratio of the films is 68%. Dielectric constant and loss factor at 10 kHz is about 4.023 F/m and 0.003, respectively. The refractive indices of the films, n e and n o, are 1.657 3 and 1.627 8 at 0.63 μm wavelength, respectively. The optical band gap of the film with a thickness of 2.33 μm is found to be 3.06 eV.展开更多
The integration of ferroelectric materials as thin films has attracted considerable attention these last years thanks to their outstanding performances that allow considering new features for the realization of photov...The integration of ferroelectric materials as thin films has attracted considerable attention these last years thanks to their outstanding performances that allow considering new features for the realization of photovoltaic devices. Our study focuses on investigating structural, dielectric and ferroelectric properties of undoped and Mn doped PZN-4.5PT nanoparticles thin films on Silicon substrate. We fabricate very stable PZN-4.5PT nanoparticles thin films deposited on nanostructured silicon substrate with giant relative dielectric permittivity of 2.76 × 104 and 17.7 × 104 for respectively the undoped and Mn doped thin films. These values are very large compared to those found in single crystals and might be explained by the influence of the gel in which nanoparticles were dispersed. The SEM images show the crystallization of new hexagonal phases on the film surface probably coming from interaction between Si and the gel. The hysteresis loops permitted to determine the spontaneous polarization (Ps), remnant polarization (Pr) and coercive field Ec which are equal to 11.73 μC/cm2, 10.20 μC/cm2 and 20 V/cm, respectively for the undoped nanoparticles thin film and 22.22 μC/cm2, 19.32 μC/cm2 and 20 V/cm respectively for the Mn doped one. These values are high and correspond to the best ones found in literature compared to typical ferroelectric thin films.展开更多
基金supported by the National Natural Science Foundation of China (No. 50872080)Shanghai Special Foundation of Nanotechnology (No. 1052nm07300)+1 种基金Shanghai Education Development Foundation (No. 08SG41)Shanghai Leading Academic Disciplines (No. S30107)
文摘PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
基金Item Sponsored by National Natural Science Foundation of China(20571067)
文摘Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited strong perpendicular magnetic anisotropy when the ratio of [-Co^2＋ ] to [-Pt^Ⅳ ] was 10 ; cathode current efficiency and perpendicular magnetic anisotropy showed little variations when [WO4^2- ] was lower than 0. 1 mol/L, but perpendicular magnetic anisotropy had strengthened when [WO4^2-] was over 0. 1 mol/L, which could be explained by the fact that the hydrogen evolution could produce pores as magnetic domain pinnings; citrate as complexing reagent can promote the polarization of [Co^2＋] and [Pt^Ⅳ]. As a result, the equilibrium electrode potentials of cobalt and platinum moved to negative direction, which led to the co-deposition of Co, Pt, and W. It was also found out that the as-deposited Co- Pt-W hard magnetic thin films were very homogeneous, smooth, and had the maximum coercivity for the bath pH 8. 5 and the concentration of citrate 0. 26 mol/L.
基金Project supported bythe National Natural Science Foundation of China (50261002 ,50661002)Natural Science Foundaion of Guangxi Province (0575093)
文摘DyPt2 films were prepared by alternate deposition thin Dy and Pt layers on glass substrates by DC magneto controlled sputtering method. The XRD data indicated that for as-deposited Dy/Pt films, and the periodic layered structures along thickness direction were evidenced with low angle X-ray scattering. With increasing annealing temperature, the compounds of DyPt, DyPt2 and DyPt3 were formed successively at temperature ranging from 300 to 400 ℃. It was found that the composition reaction DyPt+DyPt3→2DyPt2 took place at 500 ℃. After annealing at 500 ℃ for 1 h, the compounds DyPt and DyPt3 transformed completely into the DyPt2 compound.
文摘A photoelectrochemical process in the degradation of an azodye (Acid Orange II) on a Pt/TiO 2 film electrode was investigated. By using the glass device and the voltage stabilized source of direct current, decolorization ratios higher than 78% were observed during a period of 5h. Comparing this value with the sum of the decolorization ratios obtained by a sole application of electrochemical(lower than 3%) and photochemical(about 23%) procedures, a significant synergic effect between both processes was observed. The effects of adscititious voltage and pH value on the decolorization ratios were obvious while the effect of the amount of aeration was minor.
文摘The preparation of PT/PEK c films is reported as well as their dielectric and optical properties. The c axis orientation ratio of the films is 68%. Dielectric constant and loss factor at 10 kHz is about 4.023 F/m and 0.003, respectively. The refractive indices of the films, n e and n o, are 1.657 3 and 1.627 8 at 0.63 μm wavelength, respectively. The optical band gap of the film with a thickness of 2.33 μm is found to be 3.06 eV.
文摘The integration of ferroelectric materials as thin films has attracted considerable attention these last years thanks to their outstanding performances that allow considering new features for the realization of photovoltaic devices. Our study focuses on investigating structural, dielectric and ferroelectric properties of undoped and Mn doped PZN-4.5PT nanoparticles thin films on Silicon substrate. We fabricate very stable PZN-4.5PT nanoparticles thin films deposited on nanostructured silicon substrate with giant relative dielectric permittivity of 2.76 × 104 and 17.7 × 104 for respectively the undoped and Mn doped thin films. These values are very large compared to those found in single crystals and might be explained by the influence of the gel in which nanoparticles were dispersed. The SEM images show the crystallization of new hexagonal phases on the film surface probably coming from interaction between Si and the gel. The hysteresis loops permitted to determine the spontaneous polarization (Ps), remnant polarization (Pr) and coercive field Ec which are equal to 11.73 μC/cm2, 10.20 μC/cm2 and 20 V/cm, respectively for the undoped nanoparticles thin film and 22.22 μC/cm2, 19.32 μC/cm2 and 20 V/cm respectively for the Mn doped one. These values are high and correspond to the best ones found in literature compared to typical ferroelectric thin films.
