This paper reports the PVT x properties of R22/R152a system in the ranges of temperature from 298.15K to 353.15K and pressure from 0.288 MPa to 1.288 MPa. Sixty seven PVT x measurements for three compositions, i...This paper reports the PVT x properties of R22/R152a system in the ranges of temperature from 298.15K to 353.15K and pressure from 0.288 MPa to 1.288 MPa. Sixty seven PVT x measurements for three compositions, i.e., 0.2712, 0.4094 and 0.7911 mole fraction of R22, have been measured along 16 isotherms. The uncertainties of temperature and pressure measurements are less than ±0.01K and ±500 Pa respectively. The reliability of the experimental measurements is confirmed by the CSD equation.展开更多
采用数值模拟研究PVT法φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数。研究表明φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 k Hz以下,系统分析不同生长参数下生长腔内...采用数值模拟研究PVT法φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数。研究表明φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 k Hz以下,系统分析不同生长参数下生长腔内径向及轴向温度梯度的变化规律。在此基础上初步的进行了φ150 mm 4H-SiC单晶的生长工作,获得了无裂纹、直径完整的高质量SiC衬底材料。拉曼光谱Mapping测量显示φ150 mm SiC衬底全片无多型,均为4H-SiC晶型。X光摇摆曲线显示半宽小于30 arcsec。采用掺杂过渡金属V杂质,获得了电阻率超过5×109Ω·cm的150 mm SiC衬底。展开更多
文摘This paper reports the PVT x properties of R22/R152a system in the ranges of temperature from 298.15K to 353.15K and pressure from 0.288 MPa to 1.288 MPa. Sixty seven PVT x measurements for three compositions, i.e., 0.2712, 0.4094 and 0.7911 mole fraction of R22, have been measured along 16 isotherms. The uncertainties of temperature and pressure measurements are less than ±0.01K and ±500 Pa respectively. The reliability of the experimental measurements is confirmed by the CSD equation.
文摘采用数值模拟研究PVT法φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数。研究表明φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 k Hz以下,系统分析不同生长参数下生长腔内径向及轴向温度梯度的变化规律。在此基础上初步的进行了φ150 mm 4H-SiC单晶的生长工作,获得了无裂纹、直径完整的高质量SiC衬底材料。拉曼光谱Mapping测量显示φ150 mm SiC衬底全片无多型,均为4H-SiC晶型。X光摇摆曲线显示半宽小于30 arcsec。采用掺杂过渡金属V杂质,获得了电阻率超过5×109Ω·cm的150 mm SiC衬底。
