With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of Si...With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.展开更多
A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
This paper explores and proposes a design solution of an integrated skip cycle mode (SCM) control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V proces...This paper explores and proposes a design solution of an integrated skip cycle mode (SCM) control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply (SMPS) works with low load or without load.展开更多
A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distri...A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation method.In practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and simulation.Compared with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling errors.To demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated.展开更多
Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A ...Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A detailed analysis of the soft switching process in the rugged resonant dc link and the realization of pulse width modulation (PWM) control strategy in the inverter bridge are presented in the paper. The operation modes, the input and output features and the interface between the rugged resonant dc link and the inverter bridge are also discussed. The relationship between the circuit features and the parameters is deduced, which provides a theoretical base for the circuit design. The analysis results show that the rugged resonant dc link can be regulated by open-loop control and the control of the rugged resonant dc link is independent of that of the inverter bridge, which makes the inverter control easy and realizable.The circuit of the inverter is simulated with a standard circuit simulation program PSPICE. The simulation results are corresponding to the predicted ones of the circuit analysis.展开更多
National R&D activities on optical switching networkare introduced. Optical switching network testbedswere established in China including 3T-net andOBS ring and mesh network test-bed with the supportof national ...National R&D activities on optical switching networkare introduced. Optical switching network testbedswere established in China including 3T-net andOBS ring and mesh network test-bed with the supportof national '863' program. As an importantmodule in OPS network, a novel all-optical serialmulticast mode is discussed.展开更多
In order to realize the fault diagnosis of the control circuit of all-electronic computer interlocking system(ACIS)for railway signals,taking a five-wire switch electronic control module as an research object,we propo...In order to realize the fault diagnosis of the control circuit of all-electronic computer interlocking system(ACIS)for railway signals,taking a five-wire switch electronic control module as an research object,we propose a method of selecting the sample set of the basic classifier by roulette method and realizing fault diagnosis by using SVM-AdaBoost.The experimental results show that the proportion of basic classifier samples affects classification accuracy,which reaches the highest when the proportion is 85%.When selecting the sample set of basic classifier by roulette method,the fault diagnosis accuracy is generally higher than that of the maximum weight priority method.When the optimal proportion 85%is taken,the accuracy is highest up to 96.3%.More importantly,this way can better adapt to the critical data and improve the anti-interference ability of the algorithm,and therefore it provides a basis for fault diagnosis of ACIS.展开更多
A crowbar impulse current circuit for testing the switch-type surge protective device (SPD) is presented. The crowbar circuit consists of a computer control circuit, a trigger voltage pulse generator, a main dischar...A crowbar impulse current circuit for testing the switch-type surge protective device (SPD) is presented. The crowbar circuit consists of a computer control circuit, a trigger voltage pulse generator, a main discharging switch, and a crowbar pseudospark switch. The active trigger technology was studied in the crowbar impulse current circuit. The circuit monitors the main discharging current and generates a trigger signal at a proper time for the crowbar pseudospark switch operation. The trigger characteristics of the main discharge switch and the crowbar pseu- dospark switch were investigated. By monitoring the preset applied capacitor voltage, the gap distance of the main discharging switch could be adjusted to ensure a discharging delay time less than 2 μs. Equipped with a surface ttashover trigger device made of high relative perimittivity dielectric material BaTiO3 (εr = 3460), the discharge delay time of the crowbar pseudospark switch is less than 85 ns, and the minimum operating voltage is less than 1% of its self-breakdown voltage. With a storage capacitor of 9 μF , an inductor of 18 μH and a crowbar pseudospark switch, a load of 30 mΩ and an applied capacitor voltage of 40 kV, an impulse current waveform of maximum 25 kA was generated with a rise time and time to half peak value of 17.2 μs and 336μs respectively.展开更多
Even though switching in vacuum is a technology with almost 100 years of history,its recent develop-ments are still changing the future of power transmission and distribution systems.First,current switch-ing in vacuum...Even though switching in vacuum is a technology with almost 100 years of history,its recent develop-ments are still changing the future of power transmission and distribution systems.First,current switch-ing in vacuum is an eco-friendly technology compared to switching in SF 6 gas,which is the strongest greenhouse gas according to the Kyoto Protocol.Vacuum,an eco-friendly natural medium,is promising for reducing the usage of SF 6 gas in current switching in transmission voltage.Second,switching in vacuum achieves faster current interruption than existing alternating current(AC)switching technolo-gies.A vacuum circuit breaker(VCB)that uses an electromagnetic repulsion actuator is able to achieve a theoretical limit of AC interruption,which can interrupt a short-circuit current in the first half-cycle of a fault current,compared to the more common three cycles for existing current switching technologies.This can thus greatly enhance the transient stability of power networks in the presence of short-circuit faults,especially for ultra-and extra-high-voltage power transmission lines.Third,based on fast vacuum switching technology,various brilliant applications emerge,which are benefiting the power systems.They include the applications in the fields of direct current(DC)circuit breakers(CBs),fault current lim-iting,power quality improvement,generator CBs,and so forth.Fast vacuum switching technology is promising for controlled switching technology in power systems because it has low variation in terms of opening and closing times.With this controlled switching,vacuum switching technology may change the“gene”of power systems,by which power switching transients will become smoother.展开更多
By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is su...By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.展开更多
Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch(CRS)-based stateful log...Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch(CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.展开更多
With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of dat...With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.展开更多
With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
A deep understanding of the physical processes coming along with the current interruption in high voltage circuit breakers is essential for the optimization of today’s switching technologies.Therefore a switching arc...A deep understanding of the physical processes coming along with the current interruption in high voltage circuit breakers is essential for the optimization of today’s switching technologies.Therefore a switching arc in a model circuit breaker is studied by means of computational fluid dynamics(CFD)simulations and optical emission spectroscopy(OES)in this contribution.Experimental investigations are performed in carbon dioxide(CO2)at absolute filling pressures of 0.1 and 0.5 MPa.CFD simulations are carried out based on a model of the arcing zone including a consistent treatment of the radiation transport and the wall ablation.Carbon ion line radiation is analysed in the experiment using an optical path in the heating channel between the electrodes inside the nozzle system.The pressure value in the arc is estimated based on the line width-intensity dependence.Obtained values correspond to the measured pressure outside the arc.For the temperature profiles,a good agreement within the accuracy of the approaches is observed between the CFD simulations and the results of OES.展开更多
The working of Canonical switching cell(CSC)converter was studied and its equivalent circuit during ON and OFF states were obtained.State space model of CSC converter in ON and OFF states were developed using the Kirc...The working of Canonical switching cell(CSC)converter was studied and its equivalent circuit during ON and OFF states were obtained.State space model of CSC converter in ON and OFF states were developed using the Kirchhoff laws.The state space matrices were used to construct the transfer functions of ON&OFF states.The step response of the converter was simulated using MATLAB.The step response curve was obtained using different values of circuit components(L,C1,C2 and RL)and optimized.The characteristic parameters such as rise time,overshoot,settling time,steady state error and stability were determined using the step response curve.The response curve shows that there is no overshoot;the rise time and settling time are very low as expected for a converter and its stability is very high but the amplitude is very.The circuit was tuned to attain the expected amplitude using PID controller with the help of Genetic algorithm.The excellent results of circuits’characteristic parameters are very useful guideline for constructing such CSC converters for DC-DC conversions.The circuit characteristic parameters are useful in constructing such CSC converters for DCDC conversions in driving solar energy using solar panel.展开更多
Resonant tunneling diode (RTD) of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : 1 at roo...Resonant tunneling diode (RTD) of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.展开更多
We propose schemes to realize robust quantum states transfer between distant resonators using the topological edge states of a one-dimensional circuit quantum electrodynamics(QED)lattice.Analyses show that the distrib...We propose schemes to realize robust quantum states transfer between distant resonators using the topological edge states of a one-dimensional circuit quantum electrodynamics(QED)lattice.Analyses show that the distribution of edge states can be regulated accordingly with the on-site defects added on the resonators.And we can achieve different types of quantum state transfer without adjusting the number of lattices.Numerical simulations demonstrate that the on-site defects can be used as a change-over switch for high-fidelity single-qubit and two-qubit quantum states transfer.This work provides a viable prospect for flexible quantum state transfer in solid-state topological quantum system.展开更多
Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit a...Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE (even-even) and OO (odd-odd) phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason's relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way.展开更多
基金the phased achievements of the postgraduate practice innovation project(SJCX22_1479)in Jiangsu Province.
文摘With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
文摘This paper explores and proposes a design solution of an integrated skip cycle mode (SCM) control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply (SMPS) works with low load or without load.
文摘A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation method.In practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and simulation.Compared with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling errors.To demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated.
文摘Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A detailed analysis of the soft switching process in the rugged resonant dc link and the realization of pulse width modulation (PWM) control strategy in the inverter bridge are presented in the paper. The operation modes, the input and output features and the interface between the rugged resonant dc link and the inverter bridge are also discussed. The relationship between the circuit features and the parameters is deduced, which provides a theoretical base for the circuit design. The analysis results show that the rugged resonant dc link can be regulated by open-loop control and the control of the rugged resonant dc link is independent of that of the inverter bridge, which makes the inverter control easy and realizable.The circuit of the inverter is simulated with a standard circuit simulation program PSPICE. The simulation results are corresponding to the predicted ones of the circuit analysis.
基金supported by National Natural Science Foundation of China(31301080)China Postdoctoral Science Foundation Project(2015M582122,2016T90644)+2 种基金National Key Technology Support Program of China(2015BAF13B00)Natural Science Foundation of Shandong Province(ZR2015FL001)the Open Project of State Key Laboratory of Crop Biology(2013KF10)
基金supported by the NSFC for Distin guished Young Scholars(No.60325104)NSFC (No.90704006)+4 种基金National 973 Program(No.2007CB310705)National 863 Program(No.2006AA01Z238)PCSIRT(No.IRT0609)ISTCP(No.2006DFA11040)111 Project(No.B07005),P.R.China
文摘National R&D activities on optical switching networkare introduced. Optical switching network testbedswere established in China including 3T-net andOBS ring and mesh network test-bed with the supportof national '863' program. As an importantmodule in OPS network, a novel all-optical serialmulticast mode is discussed.
基金Natural Science Foundation of Gansu Province(Nos.18JR3RA130,2018C-11,2018A-022)Science Fund of Lanzhou Jiaotong University(No.2017022)。
文摘In order to realize the fault diagnosis of the control circuit of all-electronic computer interlocking system(ACIS)for railway signals,taking a five-wire switch electronic control module as an research object,we propose a method of selecting the sample set of the basic classifier by roulette method and realizing fault diagnosis by using SVM-AdaBoost.The experimental results show that the proportion of basic classifier samples affects classification accuracy,which reaches the highest when the proportion is 85%.When selecting the sample set of basic classifier by roulette method,the fault diagnosis accuracy is generally higher than that of the maximum weight priority method.When the optimal proportion 85%is taken,the accuracy is highest up to 96.3%.More importantly,this way can better adapt to the critical data and improve the anti-interference ability of the algorithm,and therefore it provides a basis for fault diagnosis of ACIS.
文摘A crowbar impulse current circuit for testing the switch-type surge protective device (SPD) is presented. The crowbar circuit consists of a computer control circuit, a trigger voltage pulse generator, a main discharging switch, and a crowbar pseudospark switch. The active trigger technology was studied in the crowbar impulse current circuit. The circuit monitors the main discharging current and generates a trigger signal at a proper time for the crowbar pseudospark switch operation. The trigger characteristics of the main discharge switch and the crowbar pseu- dospark switch were investigated. By monitoring the preset applied capacitor voltage, the gap distance of the main discharging switch could be adjusted to ensure a discharging delay time less than 2 μs. Equipped with a surface ttashover trigger device made of high relative perimittivity dielectric material BaTiO3 (εr = 3460), the discharge delay time of the crowbar pseudospark switch is less than 85 ns, and the minimum operating voltage is less than 1% of its self-breakdown voltage. With a storage capacitor of 9 μF , an inductor of 18 μH and a crowbar pseudospark switch, a load of 30 mΩ and an applied capacitor voltage of 40 kV, an impulse current waveform of maximum 25 kA was generated with a rise time and time to half peak value of 17.2 μs and 336μs respectively.
基金supported in part by the National Natural Science Foundation of China (51937009 and 51877166)the Key Research and Development Program of Shaanxi Province (2019ZDLGY18-04)
文摘Even though switching in vacuum is a technology with almost 100 years of history,its recent develop-ments are still changing the future of power transmission and distribution systems.First,current switch-ing in vacuum is an eco-friendly technology compared to switching in SF 6 gas,which is the strongest greenhouse gas according to the Kyoto Protocol.Vacuum,an eco-friendly natural medium,is promising for reducing the usage of SF 6 gas in current switching in transmission voltage.Second,switching in vacuum achieves faster current interruption than existing alternating current(AC)switching technolo-gies.A vacuum circuit breaker(VCB)that uses an electromagnetic repulsion actuator is able to achieve a theoretical limit of AC interruption,which can interrupt a short-circuit current in the first half-cycle of a fault current,compared to the more common three cycles for existing current switching technologies.This can thus greatly enhance the transient stability of power networks in the presence of short-circuit faults,especially for ultra-and extra-high-voltage power transmission lines.Third,based on fast vacuum switching technology,various brilliant applications emerge,which are benefiting the power systems.They include the applications in the fields of direct current(DC)circuit breakers(CBs),fault current lim-iting,power quality improvement,generator CBs,and so forth.Fast vacuum switching technology is promising for controlled switching technology in power systems because it has low variation in terms of opening and closing times.With this controlled switching,vacuum switching technology may change the“gene”of power systems,by which power switching transients will become smoother.
基金Supported by National Natural Science Foundation of China
文摘By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61374150 and 11271146)the State Key Program of the National Natural Science Foundation of China(Grant No.61134012)+1 种基金the Doctoral Fund of Ministry of Education of China(Grant No.20130142130012)the Science and Technology Program of Shenzhen City,China(Grant No.JCYJ20140509162710496)
文摘Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch(CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.
基金Project supported by the National Natural Science Foundation of China(Grant No.60921062)
文摘With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
文摘A deep understanding of the physical processes coming along with the current interruption in high voltage circuit breakers is essential for the optimization of today’s switching technologies.Therefore a switching arc in a model circuit breaker is studied by means of computational fluid dynamics(CFD)simulations and optical emission spectroscopy(OES)in this contribution.Experimental investigations are performed in carbon dioxide(CO2)at absolute filling pressures of 0.1 and 0.5 MPa.CFD simulations are carried out based on a model of the arcing zone including a consistent treatment of the radiation transport and the wall ablation.Carbon ion line radiation is analysed in the experiment using an optical path in the heating channel between the electrodes inside the nozzle system.The pressure value in the arc is estimated based on the line width-intensity dependence.Obtained values correspond to the measured pressure outside the arc.For the temperature profiles,a good agreement within the accuracy of the approaches is observed between the CFD simulations and the results of OES.
文摘The working of Canonical switching cell(CSC)converter was studied and its equivalent circuit during ON and OFF states were obtained.State space model of CSC converter in ON and OFF states were developed using the Kirchhoff laws.The state space matrices were used to construct the transfer functions of ON&OFF states.The step response of the converter was simulated using MATLAB.The step response curve was obtained using different values of circuit components(L,C1,C2 and RL)and optimized.The characteristic parameters such as rise time,overshoot,settling time,steady state error and stability were determined using the step response curve.The response curve shows that there is no overshoot;the rise time and settling time are very low as expected for a converter and its stability is very high but the amplitude is very.The circuit was tuned to attain the expected amplitude using PID controller with the help of Genetic algorithm.The excellent results of circuits’characteristic parameters are very useful guideline for constructing such CSC converters for DC-DC conversions.The circuit characteristic parameters are useful in constructing such CSC converters for DCDC conversions in driving solar energy using solar panel.
基金SUPPORTED BY NATIONAL NATURAL SCIENCE FOUNDATION OF CHINA( NO. 60177010).
文摘Resonant tunneling diode (RTD) of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.
基金supported by the National Natural Science Foundation of China(Grant Nos.61801280,61805134,and 61822114)the Applied Fundamental Research Projects of Shanxi Province,China(Grant No.201801D221015)Science and Technology Innovation Project of Shanxi Normal University(Grant No.2020XSY032)。
文摘We propose schemes to realize robust quantum states transfer between distant resonators using the topological edge states of a one-dimensional circuit quantum electrodynamics(QED)lattice.Analyses show that the distribution of edge states can be regulated accordingly with the on-site defects added on the resonators.And we can achieve different types of quantum state transfer without adjusting the number of lattices.Numerical simulations demonstrate that the on-site defects can be used as a change-over switch for high-fidelity single-qubit and two-qubit quantum states transfer.This work provides a viable prospect for flexible quantum state transfer in solid-state topological quantum system.
文摘Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE (even-even) and OO (odd-odd) phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason's relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way.