Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark I-V-T Characteristics

Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (Is), the ideality factor (n), the series and the shunt resistances (Rs and Rsh), the effective and the zero bias barrier heights (ΦB and ΦB0), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (Vbi), together with the semiconductor doping concentration (NA or ND). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on ΦB, ΦB0, n and NA or ND parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.

Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters

In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were measured at temperature ranges from 100 to 300 K.The main parameters of this Schottky diode,such as the ideality factor,barrier height,series resistance and saturation current,have been extracted using both analytical and heuristics methods.Differential evolution(DE),particle swarm optimization(PSO)and artificial bee colony(ABC)have been chosen as candidate heuristics algorithms,while Cheung technic was selected as analytical extraction method.The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy,convergence speed and robustness.

Optimal Extraction of Photovoltaic Model Parameters Using Gravitational Search Algorithm Approach

Extraction of accurate Photo Voltaic (PV) model parameters is a challenging task for PV simulator developers. To mitigate this challenging task a novel approach using Gravitational Search Algorithm (GSA) for accurate extraction of PV model parameters is proposed in this paper. GSA is a population based heuristic optimization method which depends on the law of gravity and mass interactions. In this optimization method, the searcher agents are collection of masses which interact with each other using laws of gravity and motion of Newton. The developed PV model utilizes mathematical equations and is described through an equivalent circuit model comprising of a current source, a diode, a series resistor and a shunt resistor including the effect of changes in solar irradiation and ambient temperature. The optimal values of photo-current, diode ideality factor, series resistance and shunt resistance of the developed PV model are obtained by using GSA. The simulations of the characteristic curves of PV modules (SM55, ST36 and ST40) are carried out using MATLAB/Simulink environment. Results obtained using GSA are compared with Differential Evolution (DE), which shows that GSA based parameters are better optimal when compared to DE.

Mixed Electric and Magnetic Coupling Design Based on Coupling Matrix Extraction

This paper proposes a design and fine-tuning method for mixed electric and magnetic coupling filters.It derives the quantitative relationship between the coupling coefficients(electric and magnetic coupling,i.e.,EC and MC)and the linear coefficients of frequencydependent coupling for the first time.Different from the parameter extraction technique using the bandpass circuit model,the proposed approach explicitly relatesEC and MC to the coupling matrix model.This paper provides a general theoretic framework for computer-aided design and tuning of a mixed electric and magnetic coupling filter based on coupling matrices.An example of a 7th-order coaxial combline filter design is given in the paper,verifying the practical value of the approach.

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors(HEMTs)is proposed,which considers a dual-field-plate(FP)made up of a gate-FP and a source-FP.The equivalent circuit of the overall model is composed of parasitic elements,intrinsic transistors,gate-FP,and source-FP networks.The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor.In order to simplify the complexity of the model,a series combination of a resistor and a capacitor is employed to represent the source-FP.The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit.The verification is carried out on a 4×250μm GaN HEMT device with a gate-FP and a source-FP in a 0.45μm technology.Compared with the classic model,the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz.

Extraction of optical constants and thickness of nanometre scale TiO2 film

TiO2 thin films were deposited on glass substrates by sputtering in a conventional rf magnetron sputtering system. X-ray diffraction pattern and transmission spectrum were measured. The curves of refraction index and extinction coefficient distributions as well as the thickness of films calculated from transmission spectrum were obtained. The optimization problem was also solved using a method based on a constrained nonlinear programming algorithm.

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

A novel physical parameter extraction approach for Schottky diodes

Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

Bio-inspired optimization algorithms for optical parameter extraction of dielectric materials: A comparative study

Particle swarm optimization(PSO) and invasive weed optimization(IWO) algorithms are used for extracting the modeling parameters of materials useful for optics and photonics research community. These two bio-inspired algorithms are used here for the first time in this particular field to the best of our knowledge. The algorithms are used for modeling graphene oxide and the performances of the two are compared. Two objective functions are used for different boundary values. Root mean square(RMS) deviation is determined and compared.

Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the I-V characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows： the ideality factor n, the series resistance Rs, the zero-field barrier height Фb0, the interface state density Dit, and the interracial layer capacitance Ci. It is found that the ideality factor n of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400℃. Depositing a very thin （-1 nm） heavily Ge-doped n＋ Ge intermediate layer can improve the NiGe film morphology significantly.

A Direct Parameter-Extraction Method for GaInP/GaAs Heterojunction Bipolar Transistors Small-Signal Model

An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.

Valuation and Determination of Seven and Five Parameters of Photovoltaic Generator by Iterative Method

The mathematical modeling of solar cells is essential for any optimization operation of the efficiency or the diagnosis of photovoltaic generator. The photovoltaic module is generally represented by an equivalent circuit whose parameters are experimentally calculated by using the characteristic current-tension, I-V. The precise determination of these parameters stays a challenge for the researchers, making to a big difference in the models and the digital methods dedicated to their characterizations. In the present paper, We are interested to characterize the parameters of single diode and two diodes models, in order to plan the behavior of the photovoltaic generator under real functioning conditions. We developed an identification method of the parameters using Newton Raphson method by using the software Matlab/Simulink. This method is the faster technique which allows the identification of several parameters and can be used in real time applications. The results of the proposed method show an accordance with the experimental and simulated characteristics of photovoltaic generator.

An Improved Parasitic Parameter Extraction Method for InP HEMT

An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa-rameter extraction.It is necessary to accurately determine and effectively eliminate the parasitic effect,so as to avoid the error propagation to the internal circuit parameters.In this paper,in order to obtain higher accuracy of parasitic parameters,parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters.The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param-eters up to 40 GHz for InP HEMT.In 0.1-40 GHz InP HEMT,the average relative error of the optimization algorithm is about 9%higher than that of the analysis method,which verifies the validity of the parasitic parameter extraction method.The extraction of parasit-ic parameters not only provides a foundation for the high-precision extraction of small sig-nal intrinsic parameters of HEMT devices,but also lays a foundation for the high-preci-sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.

PV Solar Yield Applicable Simulator Based on Free Irradiance Data Source:Applied Comprehensive Tool for Solar Engineers

Accurate PV system simulators are implemented with expensive software platforms using paid irradiance data.The main purpose of this paper is to develop and validate a PV system simulator,beginning with a solar cell parameter extraction model,then test and validate long-termIrradiance data using free online source(Typical Meteorological Year TMY in(PVGIS)European website),and finally building full solar generator simulator to run in working real conditions.Comparing results with Accurate Paid PV simulators(which use theMuneer model)showed good accuracy of the proposed simulator.Work flow starts with the Irradiance model’s data processing,then solar cell 5 parameters model data processing(to extract cell parameters),and finally full system simulator.MATLAB coding programs in real working conditions are used for simulation.Results of solar cell parameter extraction show 99.6%to 99.99%matching with data sheet and cell performance under standard test conditions.Systemmodel simulation output shows 8%less yearly generated energy compared to the PVGIS 2022 long-term simulation(hourly basis(one-year time)).This is due to incident energy variations(between the years 2016 and 2022)of 4.02%.The novelty of the algorithm is the methodology,as it tests irradiance data on an hourly basis and validates results for a whole continuous year.Also,the 5-parameter solar cell model is used to be validated in long term analysis,not only STC conditions and could be applied on any PV solar cell.The algorithm and block diagramused are scalable,modular,and interchangeable with similarmodels to be tested.This simulator could test severalmethods andmodels in solar pv technology.

Extraction of physical Schottky parameters using the Lambert function in Ni/AIGaN/GaN HEMT devices with defined conduction phenomena

Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters.The Lambert function is used to give an explicit expression of the current in the Schottky junction.This function is applied with defined conduction phenomena,whereas other work presented arbitrary（or undefined）conduction mechanisms in such parameters＇ extractions.Based upon AlGaN/GaN HEMT structures,extractions of parameters are undergone in order to provide physical characteristics.This work highlights a new expression of current with defined conduction phenomena in order to quantify the physical properties of Schottky contacts in AlGaN/GaN HEMT transistors.

Chaos generation by a hybrid integrated chaotic semiconductor laser

We design a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback. It can be assembled in a commercial butterfly shell with just three micro-lenses. One of them is coated by a transflective film to provide the optical feedback for chaos generation while insuring regular laser transmission. We prove the feasibility of the chaos generation in this compact structure and provide critical external parameters for the fabrication by theoretical simulations. Rather than the usual changeless internal parameters used in previous simulation research, we extract the real parameters of the chip by experiment. Moreover, the maps of the largest Lyapunov exponent with varying bias current and feedback intensity Kap demonstrate the dynamic characteristics under different external-cavity conditions. Each laser chip has its own optimal external cavity length（L） and feedback intensity（Kap） to generate chaos because of the different internal parameters. We have acquired two ranges of optimal parameters（L = 4 mm, 0.12 〈 Kap 〈 0.2 and L = 5 mm, 0.07 〈 Kap 〈 0.12） for two different chips.

Point-Based Data Analysis for Extracting Parameters of Cutting Tools

Various types of cutting tools are known and are in use for machining parts. The dimensional parameters associated with cutting tools need to be estimated and compared to the desired values for determining their cutting performance. In this paper, a data analysis methodology for extracting parameters from a measured point set corresponding to the surface of a cutting tool is provided. We propose that the 3-D data can be simplified into 2-D data or regular data by virtually slicing it at a predetermined section or by projecting it onto a same axial plane after a simple fixed-axis rotation. A plurality of curves can be generated and optimized based on the obtained 2-D points on a cross section for calculating the section parameters, including radial (axial) rake angle, relief angle, and land width. Other dimensional parameters can also be extracted from the contour of the presented rotary axial projection data. The experimental results have shown that the approaches elaborated in this paper are effective and robust, which can be potentially extended to other applications such as the inspection of similar parts and their parameters extraction.

A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect

In analog circuit design an important parameter, from the perspective of superior device performance, is linearity. The DG MOSFET in asymmetric mode operation has been found to present a better linearity. In addi- tion to that it provides, at the discretion of analog circuit designer, an additional degree of freedom, by providing independent bias control for the front and the back gates. Here a non-quasi-static （NQS） small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD sim- ulations. The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance, Cgal and Cgd2, the intrinsic front and back distributed channel resistance, Rgdl and Rgd2 respectively, the transport de- lay, rm, and the inductance, Lsd. The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data, for symmetric DG MOSFET devices, from the available literature. The device simulation is performed with respect to frequency up to 100 GHz.

An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(DHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3D EM simulation.The simulations with a new excitation scheme are closer to the actual on-wafer measurement conditions.Appropriate simulation settings are calibrated by comparing measurement and simulation of OPEN and SHORT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance Rμ,output resistance Rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground bar.The intrinsic parameters are all extracted by exact equations that are derived from rigorous mathematics.The method is characterized by its ease of implementation and the explicit physical meaning of extraction procedure.Experimental validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.

Extracting Parameters of OFET Before and After Threshold Voltage Using Genetic Algorithms

This paper presents a compact analytical model for the organic field-effect transistors （OFETs）, which describes two main aspects, the first one is related to the behavior in above threshold regime, while the other corresponds to the below threshold regime. The total drain current in the OFET device is calculated as the sum of two components, with the inclusion of a smooth transition function in order to take into account both regions using a single expression. A genetic algorithm based approach （GA） is investigated as a parameter extraction tool in the case of the compact OFET model to find the parameters＇ values from experimental data such as： mobility enhancement factor % threshold voltage VTh, subthreshold swing S, channel length modulation A, and knee region sharpness m. The comparison of the developed current model with the experimental data shows a good agreement in terms of the transfer and the output characteristics. Therefore, the GA based approach can be considered as a competitive candidate compared to the direct method.