Recently,high-performance lead zirconate titanate(Pb(Zr_(1-x)Ti_(x))O_(3),PZT)ferroelectric ceramics have attracted intensive attention due to their wider operating temperature range,better temperature stability,as we...Recently,high-performance lead zirconate titanate(Pb(Zr_(1-x)Ti_(x))O_(3),PZT)ferroelectric ceramics have attracted intensive attention due to their wider operating temperature range,better temperature stability,as well as larger piezoelectric properties and higher energy conversion efficiency.In this study,the perovskite-type ferroelectric ceramics with a chemical formula of Pb_(0.99-x)Gd_(0.01)Sr_(x)Zr_(0.53)Ti_(0.47)O_(3)(x=0 and 0.02,abbr.PGZT and PGSZT,respectively)were prepared by the traditional solid-state reaction route.The influences of Sr-doping on the phase structure,dielectric properties,ferroelectric properties and piezoelectric properties of the PGZT ceramics were comprehensively investigated.The field-dependent P–E hysteresis loops of PGSZT were measured in the frequency range of 0.05–10 Hz and temperature range of 20–100℃.The results show that Sr-doping not only enhances the dielectric permittivity and piezoelectric coefficient of PGZT,but also decreases its dielectric loss tangent,with the d_(33) value of 473 pC/N,ε_(r) value of 1586 and tanδvalue of 0.016 found in PGSZT.Also,PGSZT shows a high Curie temperature(T_(C))of 350℃.The underlying mechanisms of the property enhancement were identified as that the introduced Sr^(2+) replaces the volatile Pb^(2+) located at the A-site of the perovskite structure,thereby reducing the concentration of lead vacancies and promoting the grain growth of the ceramics,consequently enhancing the dielectric and piezoelectric properties of PGZT.On the other hand,the frequency change in the low-frequency range(<1 Hz)played a significant impact on the remanent polarization(P_(r))and internal biased electric field(E_(i))of PGSZT,but the frequency dependence of coercive field(E_(c))tends to diminish in the high-frequency range(≥1 Hz).展开更多
The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are signif...The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.展开更多
基金funded by the Natural Science Foundation of Sichuan Province(Grant No.2024NSFSC0219).
文摘Recently,high-performance lead zirconate titanate(Pb(Zr_(1-x)Ti_(x))O_(3),PZT)ferroelectric ceramics have attracted intensive attention due to their wider operating temperature range,better temperature stability,as well as larger piezoelectric properties and higher energy conversion efficiency.In this study,the perovskite-type ferroelectric ceramics with a chemical formula of Pb_(0.99-x)Gd_(0.01)Sr_(x)Zr_(0.53)Ti_(0.47)O_(3)(x=0 and 0.02,abbr.PGZT and PGSZT,respectively)were prepared by the traditional solid-state reaction route.The influences of Sr-doping on the phase structure,dielectric properties,ferroelectric properties and piezoelectric properties of the PGZT ceramics were comprehensively investigated.The field-dependent P–E hysteresis loops of PGSZT were measured in the frequency range of 0.05–10 Hz and temperature range of 20–100℃.The results show that Sr-doping not only enhances the dielectric permittivity and piezoelectric coefficient of PGZT,but also decreases its dielectric loss tangent,with the d_(33) value of 473 pC/N,ε_(r) value of 1586 and tanδvalue of 0.016 found in PGSZT.Also,PGSZT shows a high Curie temperature(T_(C))of 350℃.The underlying mechanisms of the property enhancement were identified as that the introduced Sr^(2+) replaces the volatile Pb^(2+) located at the A-site of the perovskite structure,thereby reducing the concentration of lead vacancies and promoting the grain growth of the ceramics,consequently enhancing the dielectric and piezoelectric properties of PGZT.On the other hand,the frequency change in the low-frequency range(<1 Hz)played a significant impact on the remanent polarization(P_(r))and internal biased electric field(E_(i))of PGSZT,but the frequency dependence of coercive field(E_(c))tends to diminish in the high-frequency range(≥1 Hz).
基金supported by the National Natural Science Foundation of China(No.52192611)Beijing Municipal Natural Science Foundation(No.Z230024)the Fundamental Research Funds for the Central Universities.
文摘The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.
