Collective excitations and quantum size effects on the surfaces of Pb(111)films:An experimental study

Pb(111)film is a special system that exhibits strong quantum size effects in many electronic properties.The collective excitations,i.e.,plasmons,in Pb(111)films are also expected to show signatures of the quantum size effect.Here,using high-resolution electron energy loss spectroscopy,we measured the plasmons on the surface of Pb(111)films with different film thicknesses and analyzed the plasmon dispersions.One surface plasmon branch exhibits prominent damping in the small momentum range,which can be attributed to the interaction between the top and bottom interfaces of the Pb(111)films.With the film thickness increasing,the critical momentum characterizing the damping in Pb(111)films decays not only much slower in Pb(111)films than in other metal films,and even in films with the thickness up to 40 monolayers the damping still exists.The slow decay of the surface plasmon damping,manifesting the strong quantum size effect in Pb(111)films,might be related to the strong nesting of the Fermi surface along the(111)direction.

Epitaxial growth of CsPbBr_(3)/PbS single-crystal film heterostructures for photodetection

Epitaxial high-crystallization film semiconductor heterostructures has been proved to be an effective method to prepare single-crystal films for different functional devices in modern microelectronics,electro-optics,and optoelectronics.With superior semiconducting properties,halide perovskite materials are rising as building blocks for heterostructures.Here,the conformal vapor phase epitaxy of CsPbBr3 on PbS single-crystal films is realized to form the CsPbBr3/PbS heterostructures via a two-step vapor deposition process.The structural characterization reveals that PbS substrates and the epilayer CsPbBr3 have clear relationships:CsPbBr3(110)//PbS(100),CsPbBr3[001]//PbS[001]and CsPbBr3[001]//PbS[010].The absorption and photoluminescence(PL)characteristics of CsPbBr3/PbS heterostructures show the broadband light absorption and efficient photogenerated carrier transfer.Photodetectors based on the heterostructures show superior photoresponsivity of 15 A/W,high detectivity of 2.65×10^(11) Jones,fast response speed of 96 ms and obvious rectification behavior.Our study offers a convenient method for establishing the high-quality CsPbBr3/PbS single-crystal film heterostructures and providing an effective way for their application in optoelectronic devices.

Influence of Annealing Time on the Microstructure and Properties of Pb(Zr_(0.53)Ti_(0.47))O_3 Thin Films

The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） and scanning electron microscopy （SEM） were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer （DMA）. The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin.

Preparation of dendritic bismuth film electrodes and their application for detection of trace Pb(Ⅱ)and Cd(Ⅱ)

In this paper,dendritic Bi film electrodes with porous structure had successfully been prepared on glassy carbon electrode using a constant current electrolysis method based on hydrogen bubble dynamic templates.The electrode prepared using a large applied current density showed an increased internal electroactive area and a significantly improved electrochemical performance.The analytical utility of the prepared dendritic Bi film electrodes for the determination of Pb(Ⅱ)and Cd(Ⅱ)in the range of 5–50 μg·L^(-1)were presented in combination with square wave stripping voltammetry in model solution.Compared with non-porous Bi film electrode,the dendritic Bi film electrode exhibited higher sensitivity and lower detection limit.The prepared Bi film electrode with dendritic structure was also successfully applied to real water sample analysis.

Lattice Effect on Magnetic and Electrical Properties of Ln_(2/3)Pb_(1/3)MnO_3(Ln=La,Pr,Nd)Films

Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius 〈rA〉, the structure of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） targets transit from the rhombohedral phase to the orthorhombic phase, and the Curie temperature reduces rapidly with the decrease of 〈rA〉. The electrical properties show that films are the metallic state which can be fitted to the formula： ρ（T）=ρ0 ＋ ρ1T^2 ＋ ρ2T^4.5 at low temperatures. The temperature range of the ferromagnetic metallic state becomes narrow with the decrease of 〈rA〉. The phenomenon can be explained by the lattice effect.

锌电积用Pb-Ag阳极MnO_(2)镀膜的电化学性能

锌电积用Pb-Ag阳极存在析氧过电位高、表面铅易电化学氧化溶解,造成阴极电锌品质低等突出问题,如何减少阳极的溶铅污染并提升其催化析氧活性、降低反应能耗,成为亟待解决的难题。本文在Pb-Ag阳极表面电沉积一层均匀、致密的MnO_(2)薄膜,采用SEM、XRD和ICP等对MnO_(2)催化层的表面微观形貌、晶体结构和溶液含铅量进行分析;采用CV、LSV、EIS和Tafel等对Pb-Ag/MnO_(2)阳极的析氧催化活性和耐腐蚀性能进行分析。结果表明:在MnSO_(4)-H_(2)SO_(4)溶液中,当循环速率为200 mL/min、温度为80℃时,以4 mA/cm^(2)电沉积120 min制备的Pb-Ag/MnO_(2)镀膜电极具有最佳的催化析氧和耐蚀性能;PbAg阳极经优化镀膜后,50 mA/cm^(2)时其析氧过电位由936 mV降低为648 mV,腐蚀电流密度由7.03μA/cm^(2)降低至0.66μA/cm^(2);相较于Pb-Ag阳极,基于Pb-Ag/MnO_(2)阳极的15 d长周期电锌体系中溶铅量由0.61 mg/L降至0.29 mg/L。

STUDY ON PHOTOCATALYTIC MECHANISM OF SOL-GEL-DERIVED Pb-DOPED TiO_2 THIN FILMS

Pb-doped TiO2 photocatalytic thin films were prepared on a soda-lime glass substrate via sol-gel method using TiO2 sol solution containing lead and characterized by X-ray photoelectron spectroscopy (XPS). The results showed that besides oxides of Ti(IV) there is a certain amount of oxides of To(?) and Ti(?) and Pb exists in the forms of PbTiO3 and PbO. The photocatalytic activity of the Pb-doped TiO2 films was evaluated by the photocatalytic decolorization of aqueous methyl orange and photocatalytic mechanism mas also analyzed.

60Co-γ射线辐照对PbZr0.1Ti0.9O3（111）铁电薄膜性能的影响

采用脉冲激光沉积方法在SrTiO3衬底上制备了SrRuO3底电极和(111)择优取向的PbZr0.1Ti0.9O3外延铁电薄膜,通过顶电极Pt的构建形成了Pt/PbZr0.1Ti0.9O3(111)/SrRuO3铁电电容器结构,然后对PbZr0.1Ti0.9O3(111)铁电薄膜开展了60Co-γ射线总剂量辐照效应实验.结果表明:随着γ射线辐照剂量的增加,PbZr0.1Ti0.9O3(111)铁电薄膜中的带状畴数目逐渐减少,剩余极化强度、矫顽场和电容值轻微减小,当辐照剂量为5Mrad(Si)时,剩余极化值、矫顽场和电容值的衰减幅度仅12.4%、10.36%和13.78%;漏电流仅在高剂量辐照后产生轻微增大.可见,PbZr0.1Ti0.9O3(111)铁电薄膜具有较好的抗辐射能力,在航空航天领域有一定的应用前景.

Preparation and characterization of GaN films grown on Ga-diffused Si (111) substrates

Hexagonal GaN films were prepared by nitriding Ga_2O_3 films with flowingammonia. Ga_2O_3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.)magnetron sputtering. This paper have investigated the change of structural properties of GaN filmsnitrided in NH_3 atmosphere at the temperatures of 850, 900, and 950 deg C for 15 min and nitridedat the temperature of 900 deg C for 10, 15, and 20 min, respectively. X-ray diffraction (XRD),scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectronspectroscopy (XPS) were used to analyze the structure, surface morphology and composition ofsynthesized samples. The results reveal that the as-grown films are polycrystalline GaN withhexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained whennitrided at 900 deg C for 15 min.

Oscillatory electron phonon coupling in Pb/Si（111）deduced by temperature-dependent quantum well states

Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers （ML） have been performed within a temperature range 75-270K. Well-defined quantum well states （QWSs） are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength （λ）. An oscillatory A with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.

Regeneration of Q-State PbS Particles in Langmuir-Blodgett Films

The regeneration procedure of Q-state PbS particles in lead arachidate(PbAr)Langmuir-Blodgett films have been studied by means of UV-vis absorption, FT-IR spectra and quartz crystal microbalance(QCM) measurements.The results showed that the mole fraction of PbS particles in LB films was increased by immersing PbScontaining ArH LB films in a Pb￣(2+) buffer solution,followed by being reexposed to H_2S gas.

Effects of atomic corrugations on electronic structures in Pb_(1-x)Bi_(x) thin films

We carried out experimental investigations of the geometric effect on the electronic behavior in Pb_(1-x)Bi_(x) thin films by scanning tunneling microscopy and spectroscopy.Single crystal monolayer Pb_(0.74)Bi_(0.26) and two-monolayer Pb_(0.75)Bi_(0.25)Pb_(1-x)Bi_(x) thin films were fabricated by molecular beam epitaxy,where large surface corrugations were observed.Combined with tunneling spectroscopic measurements,it is found that atomic corrugations can widely change the electronic behaviors.These findings show that the Pb_(1-x)Bi_(x) system can be a promising platform to further explore geometry-decorated electronic behavior in two-dimensional metallic thin films.

Anomalous strain effect in heteroepitaxial SrRuO_(3) films on(111) SrTiO_(3) substrates

We report comprehensive investigations into the structure of high-quality(111)-oriented SrRuO_(3)films on SrTiO_(3)substrates to elucidate the effect of(111)heteroepitaxial strain.We found that SrRuO_(3)film with a thickness of~40 nm is compressively strained in plane on the substrate with full coherency.Nevertheless,the out-of-plane spacing is almost the same as in the bulk,which is at odds with the conventional paradigm.By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images,we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c+octahedral tilting and the formation of three equivalent domain structures on the(111)SrTiO_(3)substrate.This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the(111)heteroepitaxial strain.

THE LUBRICATING PROPERTIES OF ION-PLATING FILMS OF Pb-Sn ALLOY

Experimental results of the lubricating behaviour of Pb-Sn alloy films formed by ion-plating on brass substrates are given. It is shown that the film microhardness, friction coefficient and wear life per thickness are under the influence of the substrate. The wear failure of film appears to be film adhesion and transferring by the mating surface.

BPSCCO Superconducting Films Grown by Spray Pyrolysis Technique: Systematic Study of the Relationship between Pb Content and Annealing Conditions

Actually recent investigation in developing semiconducting-superconducting composites based in CdS and Bi-based superconductors has attracted interest in processing thin superconducting films. In this work are reported Bi-Pb-Sr-Ca-Cu-O (BPSCCO) thin films grown on MgO substrates by spray pyrolysis technique from a solution containing Bi(NO3)3, Pb(NO3)2, Sr(NO3)2, Ca(NO3)2 and Cu(NO3)2, with a subsequent solid state reaction for growing the Bi-based superconducting phases. Annealed films were characterized by X-ray diffraction, atomic absorption spectroscopy and resistance measurements. Interdependence between Pb content, annealing time and temperature, in the formation of superconducting phases was studied applying a fractional factorial design 3III4-2. Interrelation between Pb content, ta and Ta exists. The presence of Pb is necessary to stabilize the high-Tc phase but its content depends on the annealing conditions.

Crystallization and Electrical Properties of (Ba_(0.4)Pb_(0.3))Sr_(0.3)TiO_3 Thin Film by Pulsed Laser Deposition

（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.

Preparation of Nano-Particles (Pb,La)TiO_3 Thin Films by Liquid Source Misted Chemical Deposition

Nano particles lanthanum modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

High Ferroelectricities and High Curie Temperature of BiInO3PbTiO3Thin Films Deposited by RF Magnetron Sputtering Method

Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.

The surface morphologies of (Pb,Sr)TiO_3 thin film fabricated on Si-buffered Pt/Ti/SiO_2/Si substrate

(Pb,Sr)TiO3 （PST） thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.

Pb掺杂TiO_2薄膜的制备及光催化活性研究

以硝酸铅和钛酸丁酯[Ti(OBt)4]为前驱体,用溶胶-凝胶法在活性炭表面制成了Pb掺杂TiO2薄膜.并用X射线衍射(XRD)、紫外可见光谱(UV-VIS)、透射电镜(TEM)对制得的Pb掺杂TiO2薄膜进行了表征.分别用甲基橙水溶液的光催化脱色反应、有机磷农药一氧化乐果(omethoate)水溶液的光催化降解反应评价了不同Pb掺杂TiO2薄膜的光催化活性.结果表明,薄膜为金红石和锐钛矿的混合晶相.相对于未掺杂的TiO2薄膜,由于金红石含量的增加,不同Pb掺杂TiO2薄膜的吸收带发生了微小的红移.Pb掺杂使薄膜的光催化活性明显提高,当Pb/TiO2质量分数为1.7％时,薄膜显示出最高的光催化活性. TiO2薄膜中的Pb可能以Pb(Ⅳ)和Pb(Ⅱ)两种形态存在,在紫外光的辐射下,Pb(Ⅳ)和Pb(Ⅱ)可能通过浅势俘获TiO2的光生电子和空穴而发生相互转化,减少了光生电子和空穴的简单复合,从而提高了薄膜的光催化活性.