BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD...BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor (tanδ) of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured; the film deposited under 6.665 Pa exhibits low leakage current, low dielectric loss (0.017-0.041) and saturated hysteresis loop with polarization (Pr) value and coercive field (Ec) of 3 μC/cm2 and 109 kV/cm.展开更多
PbTiO<sub>3</sub> thin films are of interest to a number of device applications as IR detectors, ultrasonictransducers, etc. Early work on the fabrication of PbTiO<sub>3</sub> thin film was mai...PbTiO<sub>3</sub> thin films are of interest to a number of device applications as IR detectors, ultrasonictransducers, etc. Early work on the fabrication of PbTiO<sub>3</sub> thin film was mainly based on rfsputtering. Recently, sol-gel processing has been gaining interest in the production展开更多
基金Project(04A1B18) supported by Shanghai Municipal Education Commission Project(50472098) supported by the National Natural Science Foundation of China Project(04qmx1440) supported by Shanghai Rising Star Program, China
文摘BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor (tanδ) of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured; the film deposited under 6.665 Pa exhibits low leakage current, low dielectric loss (0.017-0.041) and saturated hysteresis loop with polarization (Pr) value and coercive field (Ec) of 3 μC/cm2 and 109 kV/cm.
文摘PbTiO<sub>3</sub> thin films are of interest to a number of device applications as IR detectors, ultrasonictransducers, etc. Early work on the fabrication of PbTiO<sub>3</sub> thin film was mainly based on rfsputtering. Recently, sol-gel processing has been gaining interest in the production
