High power vertical cavity surface emitting lasers(VCSEKLs) with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three ...High power vertical cavity surface emitting lasers(VCSEKLs) with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structures, a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration were used to improve the beam quality and the heat dissipation. A maximum output power of 1.4 W was demonstrated at CW operation for a 400 μm-diameter device. The lasing wavelength shifted to 995.5 nm with a FWHM of 2 nm at a current of 4.8 A due to the internal heating and the absence of active water cooling. A ring-shape far field pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8 A.展开更多
Optically pumped wavelength-tunable vertical-cavity surface-emitting lasers(VCSELs)operating in the ultraviolet A(UVA)spectrum were demonstrated.The VCSELs feature double dielectric distributed brag reflectors and a w...Optically pumped wavelength-tunable vertical-cavity surface-emitting lasers(VCSELs)operating in the ultraviolet A(UVA)spectrum were demonstrated.The VCSELs feature double dielectric distributed brag reflectors and a wedge-shaped cavity fabricated using the substrate transfer technique and laser lift off,resulting in a graded cavity length in one device.A resonant period gain structure is used in the InGaN/GaN multi-quantum well active region to enhance the coupling between the cavity mode field and the active layers.The optical field inside the cavity is modulated by the cavity length;thus,tunable lasing at different wavelengths is realized at different points of a single VCSEL chip.The lasing wavelength extends from 376 to 409 nm,covering most of the UVA band below the band gap of GaN.The threshold pumping power density of the UVA VCSELs at different wavelengths ranges from 383 to 466 kW/cm^(2),which is among the lowest values for ultraviolet(UV)VCSELs.This study is promising for the development of small-footprint,power-efficient UV light sources.展开更多
文摘High power vertical cavity surface emitting lasers(VCSEKLs) with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structures, a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration were used to improve the beam quality and the heat dissipation. A maximum output power of 1.4 W was demonstrated at CW operation for a 400 μm-diameter device. The lasing wavelength shifted to 995.5 nm with a FWHM of 2 nm at a current of 4.8 A due to the internal heating and the absence of active water cooling. A ring-shape far field pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8 A.
基金supported by the National Key Research and Development Program of China(Grants No.2017YFE0131500 and 2016YFB0400803)the National Natural Science Foundation of China(Grants No.U1505253 and 62104204).
文摘Optically pumped wavelength-tunable vertical-cavity surface-emitting lasers(VCSELs)operating in the ultraviolet A(UVA)spectrum were demonstrated.The VCSELs feature double dielectric distributed brag reflectors and a wedge-shaped cavity fabricated using the substrate transfer technique and laser lift off,resulting in a graded cavity length in one device.A resonant period gain structure is used in the InGaN/GaN multi-quantum well active region to enhance the coupling between the cavity mode field and the active layers.The optical field inside the cavity is modulated by the cavity length;thus,tunable lasing at different wavelengths is realized at different points of a single VCSEL chip.The lasing wavelength extends from 376 to 409 nm,covering most of the UVA band below the band gap of GaN.The threshold pumping power density of the UVA VCSELs at different wavelengths ranges from 383 to 466 kW/cm^(2),which is among the lowest values for ultraviolet(UV)VCSELs.This study is promising for the development of small-footprint,power-efficient UV light sources.
