In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and perfo...In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.展开更多
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than...A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is low.However,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion region.Between the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are provided.The improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.展开更多
After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military ...After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.展开更多
In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector—a high sensitivity, low cost, and real-time radon monitor based on a Topmetal-Ⅱ^- time projection chamber(TPC). T...In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector—a high sensitivity, low cost, and real-time radon monitor based on a Topmetal-Ⅱ^- time projection chamber(TPC). This monitor was designed to improve spatial resolution for detecting radon alpha particles using Topmetal-Ⅱ^- sensors assembled by a 0.35 lm CMOS integrated circuit process.Owing to concerns that small pixel size might have the side effect of worsening energy resolution due to lower signalto-noise ratio, a Geant4-based simulation was used to investigate the dependence of energy resolution on pixel sizes ranging from 60 to 600 lm. A non-monotonic trend in this region shows the combined effect of pixel size and threshold on pixels, analyzed by introducing an empirical expression. Pixel noise contributes 50 keV full-width at half-maximum energy resolution for 400 lm pixel size at 1–4σ threshold that is comparable to the energy resolution caused by energy fluctuations in the TPC ionization process( ~20 keV). The total energy resolution after combining both factors is estimated to be 54 keV for a pixel size of 400 lm at 1–4σ threshold. The analysis presented in this paper would help choosing suitable pixel size for future pixelated detectors.展开更多
The 12 May 2008 Wenchuan Ms8.0 earthquake produced surface displacements along the causative fault, the Yingxiu-Beichuan Fault, which are up to several meters near the fault. Because of the large gradient, satellite s...The 12 May 2008 Wenchuan Ms8.0 earthquake produced surface displacements along the causative fault, the Yingxiu-Beichuan Fault, which are up to several meters near the fault. Because of the large gradient, satellite synthetic aperture radar （SAR） interferometric data are strongly incoherent; the usual SAR interferometry method does not allow such displacements to be measured. In the present study, we employed another approach, the technique based on pixel offset tracking, to solve this problem. The used image data of six tracks are from the Advanced Land Observing Satellite, Phased Array type L-band Synthetic Aperture Radar （ALOS/PALSAR） dataset of Japan. The results show that the entire surface rupture belt is 238 km long, extending almost linearly in a direction of 42°north-east. It is offset left laterally by a north-west-striking fault at Xiaoyudong, and turns at Gaochuan, where the rupture belt shifts toward the south by 5 km, largely keeping the original trend. In terms of the features of the rupture traces, the rupture belt can be divided into five sections and three types. Among them, the Beichuan-Chaping and Hongkou-Yingxiu sections are relatively complex, with large widths and variable traces along the trend. The Pingtong-Nanba and Qingping-Jingtang sections appear uniform, characterized by straight traces and small widths. West of Yingxiu, the rupture traces are not clear. North of the rupture belt, surface displacements are 2.95 m on average, mostly 2-3.5 m, with 7-9 m the maximum near Beichuan. South of the rupture belt, the average displacement is 1.75 m, dominated by 1-2 m, with 3-4 m at a few sites. In the north, the displacements in the radar line of sight are of subsidence, and in the south, they are uplifted, in accordance with a right-slip motion that moves the northern wall of the fault to the east, and the southern wall to the west, respectively. Along the Guanxian-Jiangyou Fault, there is a uplift zone in the radar line of sight, which is 66 km long, 1.5-6 km wide, and has vertical displacements of approximately 2 m, but no observable rupture traces.展开更多
We present a novel scheme for embedding secret data into a binary image without introducing noticeable artifacts. Unlike some block-based methods, the proposed scheme encodes the secret bits directly into boundary pix...We present a novel scheme for embedding secret data into a binary image without introducing noticeable artifacts. Unlike some block-based methods, the proposed scheme encodes the secret bits directly into boundary pixels by checking each pixel of the cover image in a pseudo-random order for embedding eligibility. A set of rules ensures correct identification of data-carrying pixels in blind extraction. The proposed scheme does not generate isolated dots, and can incorporate various coding methods such as matrix encoding to further improve the embedding performance. It is shown that up to one fourth of the boundary pixels may be used to carry secret data. Experimental results indicate that the method can achieve good visual quality with fairly large data capacity.展开更多
Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and...Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
The generic Meanshift is susceptible to interference of background pixels with the target pixels in the kernel of the reference model, which compromises the tracking performance. In this paper, we enhance the target c...The generic Meanshift is susceptible to interference of background pixels with the target pixels in the kernel of the reference model, which compromises the tracking performance. In this paper, we enhance the target color feature by attenuating the background color within the kernel through enlarging the pixel weightings which map to the pixels on the target. This way, the background pixel interference is largely suppressed in the color histogram in the course of constructing the target reference model. In addition, the proposed method also reduces the number of Meanshift iterations, which speeds up the algorithmic convergence. The two tests validate the proposed approach with improved tracking robustness on real-world video sequences.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11875274 and U1232202)。
文摘In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
文摘A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is low.However,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion region.Between the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are provided.The improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.
文摘After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.
基金supported by the National Natural Science Foundation of China(No.U1732271)
文摘In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector—a high sensitivity, low cost, and real-time radon monitor based on a Topmetal-Ⅱ^- time projection chamber(TPC). This monitor was designed to improve spatial resolution for detecting radon alpha particles using Topmetal-Ⅱ^- sensors assembled by a 0.35 lm CMOS integrated circuit process.Owing to concerns that small pixel size might have the side effect of worsening energy resolution due to lower signalto-noise ratio, a Geant4-based simulation was used to investigate the dependence of energy resolution on pixel sizes ranging from 60 to 600 lm. A non-monotonic trend in this region shows the combined effect of pixel size and threshold on pixels, analyzed by introducing an empirical expression. Pixel noise contributes 50 keV full-width at half-maximum energy resolution for 400 lm pixel size at 1–4σ threshold that is comparable to the energy resolution caused by energy fluctuations in the TPC ionization process( ~20 keV). The total energy resolution after combining both factors is estimated to be 54 keV for a pixel size of 400 lm at 1–4σ threshold. The analysis presented in this paper would help choosing suitable pixel size for future pixelated detectors.
基金supported by the State Key Laboratory of Earthquake Dynamics,Institute of Geology,China Earthquake Administration(CEA) (no. LED2010A02,LED2008A06)
文摘The 12 May 2008 Wenchuan Ms8.0 earthquake produced surface displacements along the causative fault, the Yingxiu-Beichuan Fault, which are up to several meters near the fault. Because of the large gradient, satellite synthetic aperture radar （SAR） interferometric data are strongly incoherent; the usual SAR interferometry method does not allow such displacements to be measured. In the present study, we employed another approach, the technique based on pixel offset tracking, to solve this problem. The used image data of six tracks are from the Advanced Land Observing Satellite, Phased Array type L-band Synthetic Aperture Radar （ALOS/PALSAR） dataset of Japan. The results show that the entire surface rupture belt is 238 km long, extending almost linearly in a direction of 42°north-east. It is offset left laterally by a north-west-striking fault at Xiaoyudong, and turns at Gaochuan, where the rupture belt shifts toward the south by 5 km, largely keeping the original trend. In terms of the features of the rupture traces, the rupture belt can be divided into five sections and three types. Among them, the Beichuan-Chaping and Hongkou-Yingxiu sections are relatively complex, with large widths and variable traces along the trend. The Pingtong-Nanba and Qingping-Jingtang sections appear uniform, characterized by straight traces and small widths. West of Yingxiu, the rupture traces are not clear. North of the rupture belt, surface displacements are 2.95 m on average, mostly 2-3.5 m, with 7-9 m the maximum near Beichuan. South of the rupture belt, the average displacement is 1.75 m, dominated by 1-2 m, with 3-4 m at a few sites. In the north, the displacements in the radar line of sight are of subsidence, and in the south, they are uplifted, in accordance with a right-slip motion that moves the northern wall of the fault to the east, and the southern wall to the west, respectively. Along the Guanxian-Jiangyou Fault, there is a uplift zone in the radar line of sight, which is 66 km long, 1.5-6 km wide, and has vertical displacements of approximately 2 m, but no observable rupture traces.
基金Project supported by the National Natural Science Foundation of China （Grant Nos.60372090, 60502039）, and the Key Project of Shanghai Municipality for Basic Research （Grant No.04JC14037）
文摘We present a novel scheme for embedding secret data into a binary image without introducing noticeable artifacts. Unlike some block-based methods, the proposed scheme encodes the secret bits directly into boundary pixels by checking each pixel of the cover image in a pseudo-random order for embedding eligibility. A set of rules ensures correct identification of data-carrying pixels in blind extraction. The proposed scheme does not generate isolated dots, and can incorporate various coding methods such as matrix encoding to further improve the embedding performance. It is shown that up to one fourth of the boundary pixels may be used to carry secret data. Experimental results indicate that the method can achieve good visual quality with fairly large data capacity.
基金Sponsored by the National Natural Science Foundation of China(60877060)
文摘Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
基金Supported by the Program for Technology Innovation Team of Ningbo Government (No. 2011B81002)the Ningbo University Science Research Foundation (No.xkl11075)
文摘The generic Meanshift is susceptible to interference of background pixels with the target pixels in the kernel of the reference model, which compromises the tracking performance. In this paper, we enhance the target color feature by attenuating the background color within the kernel through enlarging the pixel weightings which map to the pixels on the target. This way, the background pixel interference is largely suppressed in the color histogram in the course of constructing the target reference model. In addition, the proposed method also reduces the number of Meanshift iterations, which speeds up the algorithmic convergence. The two tests validate the proposed approach with improved tracking robustness on real-world video sequences.
