A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules (DDM-CM). Closed form expressions of lumped parameters fo...A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules (DDM-CM). Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.展开更多
The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effect...The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor (6 turn, 3 060 μm in length) fabricated on low ( 1 Ω. cm) and high resistivity( 1 000 Ω.cm) silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.展开更多
该文着重分析金属线厚度对Q值的影响.为此设计了三组电感,它们的金属线厚度分别为51、0和20μm,并用Ansoft HFSS软件进行FEM(finite element method)的仿真.仿真的结果表明,金属线厚度对电感Q值的影响在很大程度上取决于电感内径的大小...该文着重分析金属线厚度对Q值的影响.为此设计了三组电感,它们的金属线厚度分别为51、0和20μm,并用Ansoft HFSS软件进行FEM(finite element method)的仿真.仿真的结果表明,金属线厚度对电感Q值的影响在很大程度上取决于电感内径的大小.因此当金属线厚度超过10μm时,通过进一步增加金属线厚度来改善Q值仍是可能的.展开更多
基于RF集成电路硅衬底螺旋电感(SIOS)的典型物理模型,用HFSS(High Frequency Structure Simulator)对中空平面四边形、八边形和圆形螺旋电感的电性能进行了模拟计算,结果与理论分析吻合.在内半径相同的情况下,圆形螺旋电感最大品质因数...基于RF集成电路硅衬底螺旋电感(SIOS)的典型物理模型,用HFSS(High Frequency Structure Simulator)对中空平面四边形、八边形和圆形螺旋电感的电性能进行了模拟计算,结果与理论分析吻合.在内半径相同的情况下,圆形螺旋电感最大品质因数Q分别比四边形和八边形增加约0.90和0.80倍;在最大品质因数频率点,圆形螺旋电感端口反射系数分别比四边形和八边形减小约32.5%和26.6%,金属材料用量分别比四边形和八边形减少约30%和20%;当Q>5时,圆形螺旋电感的工作带宽分别比四边形和八边形增大约60%和30%.展开更多
文摘A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules (DDM-CM). Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.
基金The National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(863Program)(No.2007AA04Z328)
文摘The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor (6 turn, 3 060 μm in length) fabricated on low ( 1 Ω. cm) and high resistivity( 1 000 Ω.cm) silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.
文摘该文着重分析金属线厚度对Q值的影响.为此设计了三组电感,它们的金属线厚度分别为51、0和20μm,并用Ansoft HFSS软件进行FEM(finite element method)的仿真.仿真的结果表明,金属线厚度对电感Q值的影响在很大程度上取决于电感内径的大小.因此当金属线厚度超过10μm时,通过进一步增加金属线厚度来改善Q值仍是可能的.
文摘基于RF集成电路硅衬底螺旋电感(SIOS)的典型物理模型,用HFSS(High Frequency Structure Simulator)对中空平面四边形、八边形和圆形螺旋电感的电性能进行了模拟计算,结果与理论分析吻合.在内半径相同的情况下,圆形螺旋电感最大品质因数Q分别比四边形和八边形增加约0.90和0.80倍;在最大品质因数频率点,圆形螺旋电感端口反射系数分别比四边形和八边形减小约32.5%和26.6%,金属材料用量分别比四边形和八边形减少约30%和20%;当Q>5时,圆形螺旋电感的工作带宽分别比四边形和八边形增大约60%和30%.