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A novel order-reduced thermal-coupling electrochemical model for lithium-ion batteries
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作者 谢奕展 王舒慧 +1 位作者 王震坡 程夕明 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第5期637-654,共18页
Although the single-particle model enhanced with electrolyte dynamics(SPMe)is simplified from the pseudo-twodimensional(P2D)electrochemical model for lithium-ion batteries,it is difficult to solve the partial differen... Although the single-particle model enhanced with electrolyte dynamics(SPMe)is simplified from the pseudo-twodimensional(P2D)electrochemical model for lithium-ion batteries,it is difficult to solve the partial differential equations of solid–liquid phases in real-time applications.Moreover,working temperatures have a heavy impact on the battery behavior.Hence,a thermal-coupling SPMe is constructed.Herein,a lumped thermal model is established to estimate battery temperatures.The order of the SPMe model is reduced by using both transfer functions and truncation techniques and merged with Arrhenius equations for thermal effects.The polarization voltage drop is then modified through the use of test data because its original model is unreliable theoretically.Finally,the coupling-model parameters are extracted using genetic algorithms.Experimental results demonstrate that the proposed model produces average errors of about 42 mV under 15 constant current conditions and 15 mV under nine dynamic conditions,respectively.This new electrochemicalthermal coupling model is reliable and expected to be used for onboard applications. 展开更多
关键词 lithium-ion batteries order-reduced electrochemical models SPME thermal-coupling model transient polarization voltage drop
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Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage
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作者 I Orak A Kocyigit S Almdal 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期477-483,共7页
Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series res... Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies. 展开更多
关键词 Au/ZnO/n–Si device dielectric properties polarization process frequency and voltage dependence
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